A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an Al.sub.2O.sub.3 substrate placed in the reaction chamber.

A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an Al.sub.2O.sub.3 substrate placed in the reaction chamber.

The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures.

The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures.

A ceramic-based toughness-enhanced material includes the following starting materials by volume percentage: 92-96% ceramic substrate powder, 2-4% single crystal sapphire fiber, 0.3-0.4% ceramic substrate disperser, 0.6-0.7% single crystal sapphire fiber disperser and 3-5% sintering aid.

A thermoelectric conversion material according to an embodiment is expressed by the following formula (1):

(M.sup.1.sub.1-xM.sup.2.sub.x).sub.4Si(Te.sub.1-yM.sup.3.sub.y).sub.4 (1) wherein M.sub.1 represents Ta or Nb, M.sup.2 is at least one element selected from a group consisting of elements of groups 4 to 12 in the periodic table, M.sup.3 is at least one element selected from a group consisting of As, Sb, Bi, Sn and Pb, 0x<0.02, 0y<0.02, and M.sup.2 is an element different from M.sup.1 when 0<x.

A thermoelectric conversion material according to an embodiment is expressed by the following formula (1):

(M.sup.1.sub.1-xM.sup.2.sub.x).sub.4Si(Te.sub.1-yM.sup.3.sub.y).sub.4 (1) wherein M.sub.1 represents Ta or Nb, M.sup.2 is at least one element selected from a group consisting of elements of groups 4 to 12 in the periodic table, M.sup.3 is at least one element selected from a group consisting of As, Sb, Bi, Sn and Pb, 0x<0.02, 0y<0.02, and M.sup.2 is an element different from M.sup.1 when 0<x.