The present disclosure relates to a device and method for forming efficient quantum devices, in particular quantum devices that have not been contaminated in ex-situ processes. In particular the presently disclosed method can be applied for manufacturing of a Josephson junction which is an element in a tunable superconducting qubit. One embodiment relates to a method for in-situ production of a barrier/gap in the surface layer(s) of an elongated nanostructure, the method comprising the steps of providing at least one elongated device nanostructure on a substrate in a vacuum chamber having at least one deposition source, providing at least one elongated shadow nanostructure in said vacuum chamber, and depositing at least a first facet layer on at least a part of the device nanostructure(s) and the shadow nanostructure(s) by means of said deposition source, wherein the deposition source, the device nanostructure and the shadow nanostructure during deposition are arranged such that the shadow nanostructure covers and forms a shadow mask on at least a part of the device nanostructure thereby forming a gap in the first facet layer deposited on the device nanostructure.

The present disclosure relates to a device and method for forming efficient quantum devices, in particular quantum devices that have not been contaminated in ex-situ processes. In particular the presently disclosed method can be applied for manufacturing of a Josephson junction which is an element in a tunable superconducting qubit. One embodiment relates to a method for in-situ production of a barrier/gap in the surface layer(s) of an elongated nanostructure, the method comprising the steps of providing at least one elongated device nanostructure on a substrate in a vacuum chamber having at least one deposition source, providing at least one elongated shadow nanostructure in said vacuum chamber, and depositing at least a first facet layer on at least a part of the device nanostructure(s) and the shadow nanostructure(s) by means of said deposition source, wherein the deposition source, the device nanostructure and the shadow nanostructure during deposition are arranged such that the shadow nanostructure covers and forms a shadow mask on at least a part of the device nanostructure thereby forming a gap in the first facet layer deposited on the device nanostructure.

Provided is a method for manufacturing a power storage device in which a crystalline silicon layer including a whisker-like crystalline silicon region is formed as an active material layer over a current collector by a low-pressure CVD method in which heating is performed using a deposition gas containing silicon. The power storage device includes the current collector, a mixed layer formed over the current collector, and the crystalline silicon layer functioning as the active material layer formed over the mixed layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions which project over the crystalline silicon region. With the protrusions, the surface area of the crystalline silicon layer functioning as the active material layer can be increased.

Provided is a method for manufacturing a power storage device in which a crystalline silicon layer including a whisker-like crystalline silicon region is formed as an active material layer over a current collector by a low-pressure CVD method in which heating is performed using a deposition gas containing silicon. The power storage device includes the current collector, a mixed layer formed over the current collector, and the crystalline silicon layer functioning as the active material layer formed over the mixed layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions which project over the crystalline silicon region. With the protrusions, the surface area of the crystalline silicon layer functioning as the active material layer can be increased.

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting boron nitride or amorphous carbon into an undercooled state followed by quenching. Exemplary new materials disclosed herein can be ferromagnetic and/or harder than diamond. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits. A novel phase of solid carbon has structure different than diamond and graphite.

A method of producing crystalline cellulose from a cellulosic material includes the step of reacting the cellulosic material in an aqueous slurry comprising a transition metal catalyst and a hypohalite solution.

A method of producing crystalline cellulose from a cellulosic material includes the step of reacting the cellulosic material in an aqueous slurry comprising a transition metal catalyst and a hypohalite solution.

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second input fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires.

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second input fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires.