A sapphire ribbon of the present disclosure has a width, a thickness, and a length that are orthogonal to one another, a length direction is a growth direction, and the sapphire ribbon further has two main surfaces separate from each other in a thickness direction, and the width is at least 40 cm. Further, a monocrystalline ribbon manufacturing apparatus using EFG method according to the present disclosure includes a crucible having a width greater than a depth thereof, a die pair installed in the crucible and facing each other across a slit in the depth direction, a first heater and a second heater disposed around the crucible and facing each other in the depth direction, and a third heater and a fourth heater disposed around the crucible and facing each other in the width direction.

A silicon carbide single crystal substrate includes a first main surface, a second main surface, and a circumferential edge portion. The second main surface is opposite to the first main surface. The circumferential edge portion connects the first main surface and the second main surface. The circumferential edge portion has a linear orientation flat portion, a first arc portion having a first radius, and a second arc portion connecting the orientation flat portion and the first arc portion and having a second radius smaller than the first radius, when viewed along a direction perpendicular to the first main surface.

A silicon carbide single crystal substrate includes a first main surface, a second main surface, and a circumferential edge portion. The second main surface is opposite to the first main surface. The circumferential edge portion connects the first main surface and the second main surface. The circumferential edge portion has a linear orientation flat portion, a first arc portion having a first radius, and a second arc portion connecting the orientation flat portion and the first arc portion and having a second radius smaller than the first radius, when viewed along a direction perpendicular to the first main surface.

A synthetic diamond plate comprising a polygonal plate formed of synthetic diamond material, the polygonal plate of synthetic diamond material having a thickness in a range 0.4 mm to 1. mm, and rounded corners having a radius of curvature in a range 1 mm to 6 mm. A mounted synthetic diamond plate is also disclosed comprising a polygonal synthetic diamond plate as described and a base to which the polygonal synthetic diamond plate is bonded, wherein the base comprises a cooling channel. An array of mounted synthetic diamond plates is also described, comprising a plurality of mounted synthetic diamond plates described above, wherein the cooling channels of the mounted synthetic diamond plates are linked to form a common cooling channel across the array of mounted synthetic diamond plates.

A synthetic diamond plate comprising a polygonal plate formed of synthetic diamond material, the polygonal plate of synthetic diamond material having a thickness in a range 0.4 mm to 1. mm, and rounded corners having a radius of curvature in a range 1 mm to 6 mm. A mounted synthetic diamond plate is also disclosed comprising a polygonal synthetic diamond plate as described and a base to which the polygonal synthetic diamond plate is bonded, wherein the base comprises a cooling channel. An array of mounted synthetic diamond plates is also described, comprising a plurality of mounted synthetic diamond plates described above, wherein the cooling channels of the mounted synthetic diamond plates are linked to form a common cooling channel across the array of mounted synthetic diamond plates.

Embodiments described herein relate generally to the large scale production of functionalized graphene. In some embodiments, a method for producing functionalized graphene includes combining a crystalline graphite with a first electrolyte solution that includes at least one of a metal hydroxide salt, an oxidizer, and a surfactant. The crystalline graphite is then milled in the presence of the first electrolyte solution for a first time period to produce a thinned intermediate material. The thinned intermediate material is combined with a second electrolyte solution that includes a strong oxidizer and at least one of a metal hydroxide salt, a weak oxidizer, and a surfactant. The thinned intermediate material is then milled in the presence of the second electrolyte solution for a second time period to produce functionalized graphene.

Embodiments described herein relate generally to the large scale production of functionalized graphene. In some embodiments, a method for producing functionalized graphene includes combining a crystalline graphite with a first electrolyte solution that includes at least one of a metal hydroxide salt, an oxidizer, and a surfactant. The crystalline graphite is then milled in the presence of the first electrolyte solution for a first time period to produce a thinned intermediate material. The thinned intermediate material is combined with a second electrolyte solution that includes a strong oxidizer and at least one of a metal hydroxide salt, a weak oxidizer, and a surfactant. The thinned intermediate material is then milled in the presence of the second electrolyte solution for a second time period to produce functionalized graphene.

Embodiments described herein relate generally to large scale synthesis of thinned graphite and in particular, few layers of graphene sheets and graphene-graphite composites. In some embodiments, a method for producing thinned crystalline graphite from precursor crystalline graphite using wet ball milling processes is disclosed herein. The method includes transferring crystalline graphite into a ball milling vessel that includes a grinding media. A first and a second solvent are transferred into the ball milling vessel and the ball milling vessel is rotated to cause the shearing of layers of the crystalline graphite to produce thinned crystalline graphite.

Embodiments described herein relate generally to large scale synthesis of thinned graphite and in particular, few layers of graphene sheets and graphene-graphite composites. In some embodiments, a method for producing thinned crystalline graphite from precursor crystalline graphite using wet ball milling processes is disclosed herein. The method includes transferring crystalline graphite into a ball milling vessel that includes a grinding media. A first and a second solvent are transferred into the ball milling vessel and the ball milling vessel is rotated to cause the shearing of layers of the crystalline graphite to produce thinned crystalline graphite.

A solution and method of creating such for producing silicon nanowires or silicon nano-plates. The solution comprising distilled water, Potassium Hydroxide (KOH), at least one catalyst, Sodium Methyl Siliconate (CH.sub.5NaO.sub.3Si), Ethylenediaminetetraacetic Acid (EDTA), which act as a first chelating agent, Sodium Diethyldithiocarbamate (C.sub.5H.sub.10NS.sub.2Na), which acts as a second chelating agent, and Dimethylacrylic Acid, which acts as a buffer that is able to regulate the amount of silicon nanowires or plates formed and to prevent agglomeration. The concentration of the Sodium Diethyldithiocarbamate in the solution is greater than concentration of the EDTA in the solution for forming a plurality of thick and short nanowires, and the concentration of the Sodium Diethyldithiocarbamate in the solution is less than the concentration of the EDTA in the solution for forming a plurality of thin and long nanowires.