A semiconductor substrate includes a first material layer made of a first material and including a plurality of protrusions, and a second material layer made of a second material different from the first material, filling spaces between the plurality of protrusions, and covering the plurality of protrusions. Each of the protrusions includes a tip and a plurality of facets converging at the tip, and adjacent facets of adjacent protrusions are in contact with each other,

The present invention relates to a method of manufacturing polycrystalline silicon ingot using a crucible in which an oxygen exhaust passage is formed by single crystal or polycrystalline rods, the method including the steps of: manufacturing the single crystal or polycrystalline silicon rods each having the shape of a quadrilateral pillar; putting the single crystal or polycrystalline quadrilateral pillar-shaped silicon rods into the crucible in such a manner as to be arranged close to one another along the inner peripheral surface of the crucible to thus form a space portion inside the single crystal or polycrystalline silicon rods, into which silicon chunks are put, and the oxygen exhaust passages between the inner peripheral surface of the crucible and the respective surfaces of the single crystal or polycrystalline silicon rods oriented toward the inner peripheral surface of the crucible; putting the silicon chunks into the space portion of the crucible; and melting and crystallizing the silicon chunks.

Filled carbon nanotubes (CNTs) and methods of synthesizing the same are provided. An in situ chemical vapor deposition technique can be used to synthesize CNTs filled with metal sulfide nanowires. The CNTs can be completely and continuously filled with the metal sulfide fillers up to several micrometers in length. The filled CNTs can be easily collected from the substrates used for synthesis using a simple ultrasonication method.

Filled carbon nanotubes (CNTs) and methods of synthesizing the same are provided. An in situ chemical vapor deposition technique can be used to synthesize CNTs filled with metal sulfide nanowires. The CNTs can be completely and continuously filled with the metal sulfide fillers up to several micrometers in length. The filled CNTs can be easily collected from the substrates used for synthesis using a simple ultrasonication method.

A monocrystalline silicon includes a shoulder, a straight body, and a tail. The straight body includes: a first straight body having a first diameter d1; and a second straight body provided closer to the shoulder than the first straight body is and having a second diameter d2 larger than the first diameter d1 by from 3.5% to 15%. Firstly, a resistivity at a start point of the straight body connected to the shoulder is set to a first resistivity. Subsequently, the monocrystalline silicon is pulled up and grown to form the first straight body, and a resistivity at a start point of the first straight body is set to a second resistivity lower than the first resistivity.

A monocrystalline silicon includes a shoulder, a straight body, and a tail. The straight body includes: a first straight body having a first diameter d1; and a second straight body provided closer to the shoulder than the first straight body is and having a second diameter d2 larger than the first diameter d1 by from 3.5% to 15%. Firstly, a resistivity at a start point of the straight body connected to the shoulder is set to a first resistivity. Subsequently, the monocrystalline silicon is pulled up and grown to form the first straight body, and a resistivity at a start point of the first straight body is set to a second resistivity lower than the first resistivity.

[Object] To provide a single-crystal fiber production equipment and a single-crystal fiber production method that do not at all require high precision control necessary for a conventional single-crystal production equipment, can very easily maintain a stable steady state for a long time, and can stably produce a long single crystal fiber having a length of several hundreds of meters or more.

[Solution] The single-crystal fiber production equipment is used to produce a single crystal fiber by irradiating an upper surface of a raw material rod with a laser beam within a chamber to form a melt, immersing a seed single crystal in the melt, and pulling the seed single crystal upward. The single-crystal fiber production equipment includes: a laser light source that emits the laser beam as a collimated beam; a pulling device configured to be upward and downward movable in a vertical direction with the seed single crystal held thereby; and a flat reflector that reflects the laser beam such that the reflected laser beam is incident vertically on the upper surface of the raw material rod. The upper surface of the raw material rod is irradiated with the laser beam such that the melt has a donut-shaped temperature distribution.

Disclosed is a method of making a timepiece spring from monocrystalline material including the following steps: drawing the spring; identifying one or more zones of weakness of the spring in which or in at least one of which the spring will break in the event of excessive deformation; manufacturing the spring from a wafer of monocrystalline material extending in a determined plane, while orienting the spring in the wafer such that the direction of the macroscopic stresses in the or each zone of weakness when the spring is deformed is substantially parallel to a plane of cleavage of the material intersecting the determined plane. Also disclosed is a timepiece spring obtained by such a method.

Disclosed is a method of making a timepiece spring from monocrystalline material including the following steps: drawing the spring; identifying one or more zones of weakness of the spring in which or in at least one of which the spring will break in the event of excessive deformation; manufacturing the spring from a wafer of monocrystalline material extending in a determined plane, while orienting the spring in the wafer such that the direction of the macroscopic stresses in the or each zone of weakness when the spring is deformed is substantially parallel to a plane of cleavage of the material intersecting the determined plane. Also disclosed is a timepiece spring obtained by such a method.

A SiC ingot includes a seed crystal and a single crystal grown on the seed crystal, wherein the single crystal has therein a micropipe passing through the single crystal in a growth direction, and when photoluminescence observation is performed on a plurality of wafers cut out from the single crystal in a direction intersecting the growth direction, an S/N ratio of the micropipe in a first wafer cut out of the plurality of wafers, which is closest to the seed crystal, is higher than an S/N ratio of the micropipe in a second wafer cut out from a position further away from the seed crystal than the first wafer.