A quasi-single-crystal film and its manufacturing method thereof are provided, in which a metal film having a preferred orientation of <111> on its surface is subjected to a mechanical stretching force, such that the crystal grains thereof are able to form in a much more orderly arrangement, and a quasi-single-crystal film having preferred orientations on three axes can be obtained. The proposed quasi-single-crystal film has preferred orientations of <211> and <110> on its stretching direction and a direction that is perpendicular to the stretching direction, respectively, and retains a preferred orientation of <111> on its surface. By employing the present invention, it is advantageous of manufacturing large-area quasi single crystal films having high anisotropy as well as growing two dimensional materials or developing of other anisotropic feature structures.

A quasi-single-crystal film and its manufacturing method thereof are provided, in which a metal film having a preferred orientation of <111> on its surface is subjected to a mechanical stretching force, such that the crystal grains thereof are able to form in a much more orderly arrangement, and a quasi-single-crystal film having preferred orientations on three axes can be obtained. The proposed quasi-single-crystal film has preferred orientations of <211> and <110> on its stretching direction and a direction that is perpendicular to the stretching direction, respectively, and retains a preferred orientation of <111> on its surface. By employing the present invention, it is advantageous of manufacturing large-area quasi single crystal films having high anisotropy as well as growing two dimensional materials or developing of other anisotropic feature structures.

An apparatus for manufacturing hexagonal crystals using HVPE includes: a reaction tube; a reaction boat disposed on one side in the reaction tube; a halogenation reaction gas supply pipe for supplying a halogenation reaction gas to the reaction boat; a nitrification reaction gas supply pipe for supplying a nitrification reaction gas to the reaction boat; and a heater for heating the reaction tube. The reaction boat includes a source part for receiving source materials; and a crystal growth part disposed beneath the source part and having a depressed growth mold of a predetermined shape. The source part includes: at least one penetration hole formed on a bottom surface; a first allocating area formed around the at least one penetration hole, for receiving aluminum; and a second allocating area formed around the first allocating area, for receiving a main material of the hexagonal crystal and gallium.

An apparatus for manufacturing hexagonal crystals using HVPE includes: a reaction tube; a reaction boat disposed on one side in the reaction tube; a halogenation reaction gas supply pipe for supplying a halogenation reaction gas to the reaction boat; a nitrification reaction gas supply pipe for supplying a nitrification reaction gas to the reaction boat; and a heater for heating the reaction tube. The reaction boat includes a source part for receiving source materials; and a crystal growth part disposed beneath the source part and having a depressed growth mold of a predetermined shape. The source part includes: at least one penetration hole formed on a bottom surface; a first allocating area formed around the at least one penetration hole, for receiving aluminum; and a second allocating area formed around the first allocating area, for receiving a main material of the hexagonal crystal and gallium.

[Object] To provide a single-crystal fiber production equipment and a single-crystal fiber production method that do not at all require high precision control necessary for a conventional single-crystal production equipment, can very easily maintain a stable steady state for a long time, and can stably produce a long single crystal fiber having a length of several hundreds of meters or more. [Solution] The single-crystal fiber production equipment is used to produce a single crystal fiber by irradiating an upper surface of a raw material rod with a laser beam within a chamber to form a melt, immersing a seed single crystal in the melt, and pulling the seed single crystal upward. The single-crystal fiber production equipment includes: a laser light source that emits the laser beam as a collimated beam; a pulling device configured to be upward and downward movable in a vertical direction with the seed single crystal held thereby; and a flat reflector that reflects the laser beam such that the reflected laser beam is incident vertically on the upper surface of the raw material rod. The upper surface of the raw material rod is irradiated with the laser beam such that the melt has a donut-shaped temperature distribution.

The metallic crystal structures inspired edge-to-edge tessellations and a tessellation based lattice structures are disclosed. In accordance with an exemplary embodiment of the invention, basic unit lattice cells are stacked and connected to constitute a three-dimensional tessellations, wherein each of the basic unit lattice cells comprises a multiple flat connecting portions formed on a surface of the basic unit lattice cell and intersecting with a multiple of axes intersecting in a center of the basic unit lattice cell, and the flat connecting portions of one of the basic unit lattice cell is connected to the flat connecting portions of the adjacent basic unit lattice cell to constitute a connection structure of edge-to-edge tessellation. The formed tessellations are periodically tessellated in a design domain to form different tessellated lattice structures. The Functionally Tessellated (FT) lattice structures composed of different tessellations by interlocking into each other are also disclosed.

The metallic crystal structures inspired edge-to-edge tessellations and a tessellation based lattice structures are disclosed. In accordance with an exemplary embodiment of the invention, basic unit lattice cells are stacked and connected to constitute a three-dimensional tessellations, wherein each of the basic unit lattice cells comprises a multiple flat connecting portions formed on a surface of the basic unit lattice cell and intersecting with a multiple of axes intersecting in a center of the basic unit lattice cell, and the flat connecting portions of one of the basic unit lattice cell is connected to the flat connecting portions of the adjacent basic unit lattice cell to constitute a connection structure of edge-to-edge tessellation. The formed tessellations are periodically tessellated in a design domain to form different tessellated lattice structures. The Functionally Tessellated (FT) lattice structures composed of different tessellations by interlocking into each other are also disclosed.

In one aspect, the present disclosure pertains to methods of making various noble metal nanoprisms, e.g., gold nanoprisms. In various aspects, the methods can comprise incubating, under dark conditions, a growth solution comprising: (a) a plurality of gold seed structures; (b) a gold precursor, and (c) a photocatalytic intermediary, such that during the incubating step multiply-twinned gold seed structures in the growth solution are preferentially enlarged. The disclosed methods can comprise separating the multiply-twinned gold seed structures from the growth solution based upon the size of the gold seed structures to produce an enriched growth solution. In some aspects, the methods comprise irradiating the enriched growth solution to produce the gold nanoprisms. In some aspects, the disclosed nanoprisms comprise silver.

In one aspect, the present disclosure pertains to methods of making various noble metal nanoprisms, e.g., gold nanoprisms. In various aspects, the methods can comprise incubating, under dark conditions, a growth solution comprising: (a) a plurality of gold seed structures; (b) a gold precursor, and (c) a photocatalytic intermediary, such that during the incubating step multiply-twinned gold seed structures in the growth solution are preferentially enlarged. The disclosed methods can comprise separating the multiply-twinned gold seed structures from the growth solution based upon the size of the gold seed structures to produce an enriched growth solution. In some aspects, the methods comprise irradiating the enriched growth solution to produce the gold nanoprisms. In some aspects, the disclosed nanoprisms comprise silver.

Methods for preparing single crystal silicon substrates for epitaxial growth are disclosed. The methods may involve control of the (i) a growth velocity, v, and/or (ii) an axial temperature gradient, G, during the growth of an ingot segment such that v/G is less than a critical v/G and/or is less than a value of v/G that depends on the boron concentration of the ingot. Methods for preparing epitaxial wafers are also disclosed.