A process for manufacturing a porous diamond having a tridimensional (3D) structure. The process comprises the steps of using a substrate with a pre-defined shape and a plurality of pores of a defined porosity shape and size, heating a reactant hydrocarbon gas and reactant hydrogen in a filament to form a product gas, depositing an activated carbon atom from the product gas onto the substrate, wherein the activated carbon atom reacts with the substrate to form a diamond structure on the substrate, and completely removing the substrate to obtain the 3D pure porous diamond structure, wherein the 3D pure porous diamond structure is formed entirely of diamond and is identical in shape and porosity shape and size of the plurality of pores as that of the substrate. The 3D pure porous diamond structure formed is of a controlled thickness and porosity, and devoid of the substrate.

This disclosure describes methods, apparatus, and systems related to non-contiguous channel bonding. A device may determine a wireless communication channel having one or more subchannels in accordance with one or more communication standards. The device may determine instructions to perform one or more clear channel assessments (CCAs) on at least one of the one or more subchannels. The device may cause to send the instructions to one or more first devices. The device may identify a frame received from at least one of the one or more first devices, wherein the frame is received on at least one available subchannel of the one or more subchannels.

This disclosure describes methods, apparatus, and systems related to non-contiguous channel bonding. A device may determine a wireless communication channel having one or more subchannels in accordance with one or more communication standards. The device may determine instructions to perform one or more clear channel assessments (CCAs) on at least one of the one or more subchannels. The device may cause to send the instructions to one or more first devices. The device may identify a frame received from at least one of the one or more first devices, wherein the frame is received on at least one available subchannel of the one or more subchannels.

Provided is a ground substrate includes an orientation layer used for crystal growth of a nitride or oxide of a Group 13 element. The front surface of the orientation layer on the side used for the crystal growth is composed of a material having a corundum-type crystal structure having an a-axis length and/or c-axis length larger than that of sapphire. A plurality of pores are present in the orientation layer.

The present disclosure provides a method for preparing a doped YAG single crystal fiber. The method may include preparing a doped YAG crystal rod; preparing a doped YAG single crystal fiber core by immersing at least a portion of the doped YAG crystal rod in an acid solution; performing a cylindrical surface polishing operation on the doped YAG single crystal fiber core by causing a stirrer to rotate to drive a polishing liquid to rotate; placing the doped YAG single crystal fiber core into a growth zone of a growth chamber and placing a raw material into a dissolution zone of the growth chamber; heating the growth zone and the dissolution zone by a two-stage heating device, respectively; and preparing a doped YAG single crystal fiber by growing a YAG single crystal fiber cladding on a surface of the doped YAG single crystal fiber core.

A method for manufacturing polycrystalline silicon fragments includes producing a polycrystalline silicon rod by the Siemens method; crushing the polycrystalline silicon rod to obtain polycrystalline silicon fragments; and cleaning by etching the polycrystalline silicon fragments in a cleaning tank. In the cleaning, small pieces of the polycrystalline silicon having controlled shapes and sizes are present in the cleaning tank and the weight change of the small pieces of the polycrystalline silicon before and after the etching is measured to thereby manage the cleaning.

A method for manufacturing polycrystalline silicon fragments includes producing a polycrystalline silicon rod by the Siemens method; crushing the polycrystalline silicon rod to obtain polycrystalline silicon fragments; and cleaning by etching the polycrystalline silicon fragments in a cleaning tank. In the cleaning, small pieces of the polycrystalline silicon having controlled shapes and sizes are present in the cleaning tank and the weight change of the small pieces of the polycrystalline silicon before and after the etching is measured to thereby manage the cleaning.

Core-shell nanostructures with platinum overlayers conformally coating palladium nano-substrate cores and facile solution-based methods for the preparation of such core-shell nanostructures are described herein. The obtained Pd@Pt core-shell nanocatalysts showed enhanced specific and mass activities towards oxygen reduction, compared to a commercial Pt/C catalyst.

Core-shell nanostructures with platinum overlayers conformally coating palladium nano-substrate cores and facile solution-based methods for the preparation of such core-shell nanostructures are described herein. The obtained Pd@Pt core-shell nanocatalysts showed enhanced specific and mass activities towards oxygen reduction, compared to a commercial Pt/C catalyst.

A composite structure of a ceramic substrate, including a first ceramic substrate formed by crystal growth, which has a first surface and a second surface opposite to each other, and has only vertical via holes filled with conductive material, so that the first surface and the second surface of the first ceramic substrate are electrically connected; and a thin film substrate disposed on the second surface of the first ceramic substrate, and one of the surfaces is electrically connected to the second surface of the first ceramic substrate, and an electrical connection point is provided on the other surface of the thin film substrate to electrically connect an external element or another circuit board.