A composite structure of a ceramic substrate, including a first ceramic substrate formed by crystal growth, which has a first surface and a second surface opposite to each other, and has only vertical via holes filled with conductive material, so that the first surface and the second surface of the first ceramic substrate are electrically connected; and a thin film substrate disposed on the second surface of the first ceramic substrate, and one of the surfaces is electrically connected to the second surface of the first ceramic substrate, and an electrical connection point is provided on the other surface of the thin film substrate to electrically connect an external element or another circuit board.

A semiconductor substrate includes a first material layer made of a first material and including a plurality of protrusions, and a second material layer made of a second material different from the first material, filling spaces between the plurality of protrusions, and covering the plurality of protrusions. Each of the protrusions includes a tip and a plurality of facets converging at the tip, and adjacent facets of adjacent protrusions are in contact with each other.

A semiconductor substrate includes a first material layer made of a first material and including a plurality of protrusions, and a second material layer made of a second material different from the first material, filling spaces between the plurality of protrusions, and covering the plurality of protrusions. Each of the protrusions includes a tip and a plurality of facets converging at the tip, and adjacent facets of adjacent protrusions are in contact with each other.

A light emitting structure has quantum wells grown on a coalesced substrate stemming from nanocolumns. The crystal structure is very low in defects and efficiency of light production is good. By growing the nanocolumns at a lower temperature, the quantum well structure is better matched to the coalesced substrate and efficiency is improved.

A light emitting structure has quantum wells grown on a coalesced substrate stemming from nanocolumns. The crystal structure is very low in defects and efficiency of light production is good. By growing the nanocolumns at a lower temperature, the quantum well structure is better matched to the coalesced substrate and efficiency is improved.

In one aspect, the present disclosure pertains to methods of making various noble metal nanoprisms, e.g., gold nanoprisms. In various aspects, the methods can comprise incubating, under dark conditions, a growth solution comprising: (a) a plurality of gold seed structures; (b) a gold precursor, and (c) a photocatalytic intermediary, such that during the incubating step multiply-twinned gold seed structures in the growth solution are preferentially enlarged. The disclosed methods can comprise separating the multiply-twinned gold seed structures from the growth solution based upon the size of the gold seed structures to produce an enriched growth solution. In some aspects, the methods comprise irradiating the enriched growth solution to produce the gold nanoprisms. In some aspects, the disclosed nanoprisms comprise silver.

In one aspect, the present disclosure pertains to methods of making various noble metal nanoprisms, e.g., gold nanoprisms. In various aspects, the methods can comprise incubating, under dark conditions, a growth solution comprising: (a) a plurality of gold seed structures; (b) a gold precursor, and (c) a photocatalytic intermediary, such that during the incubating step multiply-twinned gold seed structures in the growth solution are preferentially enlarged. The disclosed methods can comprise separating the multiply-twinned gold seed structures from the growth solution based upon the size of the gold seed structures to produce an enriched growth solution. In some aspects, the methods comprise irradiating the enriched growth solution to produce the gold nanoprisms. In some aspects, the disclosed nanoprisms comprise silver.

In one aspect, the present disclosure pertains to methods of making various noble metal nanoprisms, e.g., gold nanoprisms. In various aspects, the methods can comprise incubating, under dark conditions, a growth solution comprising: (a) a plurality of gold seed structures; (b) a gold precursor, and (c) a photocatalytic intermediary, such that during the incubating step multiply-twinned gold seed structures in the growth solution are preferentially enlarged. The disclosed methods can comprise separating the multiply-twinned gold seed structures from the growth solution based upon the size of the gold seed structures to produce an enriched growth solution. In some aspects, the methods comprise irradiating the enriched growth solution to produce the gold nanoprisms. In some aspects, the disclosed nanoprisms comprise silver.

In one aspect, the present disclosure pertains to methods of making various noble metal nanoprisms, e.g., gold nanoprisms. In various aspects, the methods can comprise incubating, under dark conditions, a growth solution comprising: (a) a plurality of gold seed structures; (b) a gold precursor, and (c) a photocatalytic intermediary, such that during the incubating step multiply-twinned gold seed structures in the growth solution are preferentially enlarged. The disclosed methods can comprise separating the multiply-twinned gold seed structures from the growth solution based upon the size of the gold seed structures to produce an enriched growth solution. In some aspects, the methods comprise irradiating the enriched growth solution to produce the gold nanoprisms. In some aspects, the disclosed nanoprisms comprise silver.

An apparatus for manufacturing hexagonal Si crystal includes: a reaction tube; a mixed source part placed on one side in the reaction tube, for receiving mixed source of silicon, aluminum, and gallium which are in a solid state; a halogenation reaction gas supply pipe for supplying a halogenation reaction gas to the mixed source part; a substrate mounting part placed on the other side in the reaction tube, for mounting a first substrate, wherein the first substrate is disposed such that a crystal growth surface of the first substrate faces downwards; a nitrification reaction gas supply pipe for supplying a nitrification reaction gas to the substrate mounting part; and a heater for heating the reaction tube. The heater heats the reaction tube in a temperature range of 1100-1300° C.