A method for producing a nickel cobalt complex hydroxide includes first crystallization of supplying a solution containing Ni, Co and Mn, a complex ion forming agent and a basic solution separately and simultaneously to one reaction vessel to obtain nickel cobalt complex hydroxide particles, and a second crystallization of, after the first crystallization, further supplying a solution containing nickel, cobalt, and manganese, a solution of a complex ion forming agent, a basic solution, and a solution containing said element M separately and simultaneously to the reaction vessel to crystallize a complex hydroxide particles containing nickel, cobalt, manganese and said element M on the nickel cobalt complex hydroxide particles crystallizing a complex hydroxide particles comprising Ni, Co, Mn and the element M on the nickel cobalt complex hydroxide particles.

A surface-coated cutting tool includes a base material and a coating formed on a surface of the base material. The coating includes a first hard coating layer including crystal grains having a sodium chloride-type crystal structure. The crystal grain has a layered structure in which a first layer composed of nitride or carbonitride of Al.sub.xTi.sub.1-x and a second layer composed of nitride or carbonitride of Al.sub.yTi.sub.1-y are stacked alternately into one or more layers. The first layer each has an atomic ratio x of Al varying in a range of 0.6 or more to less than 1. The second layer each has an atomic ratio y of Al varying in a range of 0.45 or more to less than 0.6. The largest value of difference between the atomic ratio x and the atomic ratio y is 0.05≤x−y≤0.5.

A surface-coated cutting tool includes a base material and a coating formed on a surface of the base material. The coating includes a first hard coating layer including crystal grains having a sodium chloride-type crystal structure. The crystal grain has a layered structure in which a first layer composed of nitride or carbonitride of Al.sub.xTi.sub.1-x and a second layer composed of nitride or carbonitride of Al.sub.yTi.sub.1-y are stacked alternately into one or more layers. The first layer each has an atomic ratio x of Al varying in a range of 0.6 or more to less than 1. The second layer each has an atomic ratio y of Al varying in a range of 0.45 or more to less than 0.6. The largest value of difference between the atomic ratio x and the atomic ratio y is 0.05≤x−y≤0.5.

A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.

A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.

A ferroelectric thin film and a forming method thereof are provided. The method of forming a ferroelectric thin film according to embodiments of the present invention comprises forming a sacrificial seed layer on a first substrate, forming a ferroelectric thin film on the sacrificial seed layer, and transferring the ferroelectric thin film to a second substrate. The ferroelectric thin film according to embodiments of the present invention is formed by the method.

A ferroelectric thin film and a forming method thereof are provided. The method of forming a ferroelectric thin film according to embodiments of the present invention comprises forming a sacrificial seed layer on a first substrate, forming a ferroelectric thin film on the sacrificial seed layer, and transferring the ferroelectric thin film to a second substrate. The ferroelectric thin film according to embodiments of the present invention is formed by the method.

A vapor phase growth device includes a flow channel defining a space through which a source gas for forming an epi layer flows, a susceptor configured to hold a substrate in a state where the substrate faces the space, and a first member disposed vertically above and opposite to the susceptor, the first member having a thermal expansion coefficient not less than 0.7 times and not more than 1.3 times the thermal expansion coefficient of the substrate. The flow channel includes a holding portion configured to hold the first member.

A substrate 10 comprises: a first layer L1 containing crystalline aluminum nitride; a second layer L2 containing crystalline α-alumina; and an intermediate layer Lm sandwiched between the first layer L1 and the second layer L2 and containing aluminum, nitrogen, and oxygen, and the content of nitrogen in the intermediate layer Lm decreases in a direction Z from the first layer L1 toward the second layer L2, and the content of oxygen in the intermediate layer Lm increases in the direction Z from the first layer L1 toward the second layer L2.

A substrate 10 comprises: a first layer L1 containing crystalline aluminum nitride; a second layer L2 containing crystalline α-alumina; and an intermediate layer Lm sandwiched between the first layer L1 and the second layer L2 and containing aluminum, nitrogen, and oxygen, and the content of nitrogen in the intermediate layer Lm decreases in a direction Z from the first layer L1 toward the second layer L2, and the content of oxygen in the intermediate layer Lm increases in the direction Z from the first layer L1 toward the second layer L2.