A method of thermally processing a material with a thermal processing system includes providing a material for treating in an in-line thermal process to a heating system, providing a force to the material at a portion of the material configured to be heated by the heating system, adjusting the heating system to a specified temperature value, and heating the portion of the material to the specified temperature value while the portion of the material is under the force to change a magnetic property in the portion of the material. The heating system is moveable from a first position that is away from a path of the material through the in-line thermal process to a second position in which the heating system is configured to heat the portion of the material to the specified temperature value. The heating system can include induction-based heating.

A method of thermally processing a material with a thermal processing system includes providing a material for treating in an in-line thermal process to a heating system, providing a force to the material at a portion of the material configured to be heated by the heating system, adjusting the heating system to a specified temperature value, and heating the portion of the material to the specified temperature value while the portion of the material is under the force to change a magnetic property in the portion of the material. The heating system is moveable from a first position that is away from a path of the material through the in-line thermal process to a second position in which the heating system is configured to heat the portion of the material to the specified temperature value. The heating system can include induction-based heating.

A system and methods are provided for low temperature, rapid baking to remove impurities from a semiconductor surface prior to in-situ deposition. The system is configured with an upper bank of heat elements perpendicular to the gas flow path, such that when the substrate is heated, the temperature across the substrate can be maintained relatively uniform via zoned heating. Advantageously, a short, low temperature process is suitable for advanced, high density circuits with shallow junctions. Furthermore, throughput is greatly improved by the low temperature bake.

A single crystal production apparatus wherein the chamber has a top plate part, a bottom plate part and a barrel part, the barrel part is in a hollow cylindrical shape and made of quartz glass and connects the top plate part with the bottom plate part, an openable/closable reflective member is provided on the outer circumference of the barrel part, and the reflective member is divided in the circumferential direction and reflects heat and light radiated from the inside of the chamber.

Methods of growing organometallic halide structures such as AMX3 single crystal organometallic halide perovskites, using the inverse temperature solubility.

Methods of growing organometallic halide structures such as AMX3 single crystal organometallic halide perovskites, using the inverse temperature solubility.

A nitride semiconductor substrate includes: a silicon single crystal substrate having a front surface and a back surface; and a nitride semiconductor thin film formed on the front surface, in which the silicon single crystal substrate has a carbon diffusion layer that has been implanted with carbon and has a carbon concentration higher than a bulk portion of the silicon single crystal substrate in at least the front surface and the back surface, and the carbon concentration in the carbon diffusion layer is 5E+16 atoms/cm.sup.3 or more. The nitride semiconductor substrate can suppress warp failure caused by plastic deformation during epitaxial growth and device processes when the nitride semiconductor substrate is produced using a silicon single crystal substrate.

A nitride semiconductor substrate includes: a silicon single crystal substrate having a front surface and a back surface; and a nitride semiconductor thin film formed on the front surface, in which the silicon single crystal substrate has a carbon diffusion layer that has been implanted with carbon and has a carbon concentration higher than a bulk portion of the silicon single crystal substrate in at least the front surface and the back surface, and the carbon concentration in the carbon diffusion layer is 5E+16 atoms/cm.sup.3 or more. The nitride semiconductor substrate can suppress warp failure caused by plastic deformation during epitaxial growth and device processes when the nitride semiconductor substrate is produced using a silicon single crystal substrate.

The present invention provides a method for doping carbon in a thin film on a wafer, the method comprising the steps of: arranging a thin film-formed wafer in a processing area; supplying an atmospheric gas into the processing area to bring the pressure in the processing area to a process pressure higher than atmospheric pressure; heating the processing area to bring the temperature in the processing area to a processing temperature; and supplying a source gas containing carbon to the processing area to allow the source gas to undergo a chemical reaction with the thin film under the process pressure at the process temperature, thereby injecting the carbon into the thin film.

A method of thermally processing a material with a thermal processing system includes providing a material for treating in an in-line thermal process to a heating system, providing a force to the material at a portion of the material configured to be heated by the heating system, adjusting the heating system to a specified temperature value, and heating the portion of the material to the specified temperature value while the portion of the material is under the force to change a magnetic property in the portion of the material. The heating system is moveable from a first position that is away from a path of the material through the in-line thermal process to a second position in which the heating system is configured to heat the portion of the material to the specified temperature value. The heating system can include induction-based heating.