A semiconductor substrate includes a first material layer made of a first material and including a plurality of protrusions, and a second material layer made of a second material different from the first material, filling spaces between the plurality of protrusions, and covering the plurality of protrusions. Each of the protrusions includes a tip and a plurality of facets converging at the tip, and adjacent facets of adjacent protrusions are in contact with each other,

Methods and wafers for low etch pit density, low slip line density, and low strain indium phosphide are disclosed and may include an indium phosphide single crystal wafer having a diameter of 4 inches or greater, having a measured etch pit density of less than 500 cm.sup.−2, and having fewer than 5 dislocations or slip lines as measured by x-ray diffraction imaging. The wafer may have a measured etch pit density of 200 cm.sup.−2 or less, or 100 cm.sup.−2 or less, or 10 cm.sup.−2 or less. The wafer may have a diameter of 6 inches or greater. An area of the wafer with a measured etch pit density of zero may at least 80% of the total area of the surface. An area of the wafer with a measured etch pit density of zero may be at least 90% of the total area of the surface.

Methods and wafers for low etch pit density, low slip line density, and low strain indium phosphide are disclosed and may include an indium phosphide single crystal wafer having a diameter of 4 inches or greater, having a measured etch pit density of less than 500 cm.sup.−2, and having fewer than 5 dislocations or slip lines as measured by x-ray diffraction imaging. The wafer may have a measured etch pit density of 200 cm.sup.−2 or less, or 100 cm.sup.−2 or less, or 10 cm.sup.−2 or less. The wafer may have a diameter of 6 inches or greater. An area of the wafer with a measured etch pit density of zero may at least 80% of the total area of the surface. An area of the wafer with a measured etch pit density of zero may be at least 90% of the total area of the surface.

An indium phosphide substrate, the phosphide substrate has an angle θ on the main surface side of 0°<θ≤120° for all of the planes A, the indium phosphide substrate has edge rounds on the main surface side and a surface side opposite to the main surface; wherein a chamfered width X.sub.f from the wafer edge on the main surface side is 50 μm or more to 130 μm or less; wherein a chamfered width X.sub.b from the wafer edge on the surface side opposite to the main surface is 150 μm or more to 400 μm or less; and wherein the indium phosphide substrate has a thickness of 330 μm or moreto 700 μm or less.

An indium phosphide substrate, the phosphide substrate has an angle θ on the main surface side of 0°<θ≤120° for all of the planes A, the indium phosphide substrate has edge rounds on the main surface side and a surface side opposite to the main surface; wherein a chamfered width X.sub.f from the wafer edge on the main surface side is 50 μm or more to 130 μm or less; wherein a chamfered width X.sub.b from the wafer edge on the surface side opposite to the main surface is 150 μm or more to 400 μm or less; and wherein the indium phosphide substrate has a thickness of 330 μm or moreto 700 μm or less.

The present disclosure relates to the field of manufacturing of silicon carbide (SiC) single crystal wafers, and discloses a stripping method and a stripping device for SiC single crystal wafers. The single crystal wafers obtained by the present disclosure have no damage layer or stress residue on surfaces or sub-surfaces, and are simple in operation and low in cost.

The present disclosure relates to the field of manufacturing of silicon carbide (SiC) single crystal wafers, and discloses a stripping method and a stripping device for SiC single crystal wafers. The single crystal wafers obtained by the present disclosure have no damage layer or stress residue on surfaces or sub-surfaces, and are simple in operation and low in cost.

A method for manufacturing epitaxial films with multiple stress states, comprising steps of: providing a first single crystal substrate, and forming a sacrificial layer and a first epitaxial film on the first single crystal substrate, wherein the first epitaxial film is made of a first material;

removing the sacrificial layer to separate the first epitaxial film from the first single crystal substrate; transferring the first epitaxial film to a second single crystal substrate, wherein the second single crystal substrate is made of a second material, a partial surface of the second single crystal substrate being overlapped by the first epitaxial film; applying epitaxies onto the first epitaxial film and the second single crystal substrate to form a second epitaxial film on the first epitaxial film and the second single crystal substrate.

A method for manufacturing epitaxial films with multiple stress states, comprising steps of: providing a first single crystal substrate, and forming a sacrificial layer and a first epitaxial film on the first single crystal substrate, wherein the first epitaxial film is made of a first material;

removing the sacrificial layer to separate the first epitaxial film from the first single crystal substrate; transferring the first epitaxial film to a second single crystal substrate, wherein the second single crystal substrate is made of a second material, a partial surface of the second single crystal substrate being overlapped by the first epitaxial film; applying epitaxies onto the first epitaxial film and the second single crystal substrate to form a second epitaxial film on the first epitaxial film and the second single crystal substrate.

A substrate comprising diamond has NV.sup.- centers in a concentration greater than about 0.5 parts per million (ppm). The method for producing this diamond substrate includes providing diamond being doped with nitrogen, irradiating at least a partial surface of the substrate with radiation that creates vacancies in the diamond, and carrying out a second heat treatment of the substrate at a certain temperature. The substrate can be used as a sensor element of a magnetometer or also as a qubit of a quantum computer