The present invention concerns a single crystalline diamond optical element production method. The method includes the steps of: providing a single crystalline diamond substrate or layer; applying a mask layer to the single crystalline diamond substrate or C layer; forming at least one or a plurality of indentations or recesses through the mask layer to expose a portion or portions of the single crystalline diamond substrate or layer, and etching the exposed portion or portions of the single crystalline diamond substrate or layer.

A synthetic diamond material comprises a surface, wherein the surface comprises a first surface region comprising a first concentration of quantum spin defects. A second surface region has a predetermined area and is located adjacent to the first surface region, the second region comprising a second concentration of quantum spin defects. The first concentration of quantum spin defects is at least ten times greater than the second concentration of quantum spin defects, and at least one of the first or second surface regions comprises chemical vapour deposition, CVD, synthetic diamond. A method of producing the synthetic diamond material is also disclosed.

One or more embodiments described herein generally relate to methods for chucking and de-chucking a substrate to/from an electrostatic chuck used in a semiconductor processing system. Generally, in embodiments described herein, the method includes: (1) applying a first voltage from a direct current (DC) power source to an electrode disposed within a pedestal; (2) introducing process gases into a process chamber; (3) applying power from a radio frequency (RF) power source to a showerhead; (4) performing a process on the substrate; (5) stopping application of the RF power; (6) removing the process gases from the process chamber; and (7) stopping applying the DC power.

Example embodiments relate to methods for producing a probe suitable for scanning probe microscopy. One embodiment includes a method for producing a probe tip suitable for scanning probe microscopy. The method includes producing a probe tip body that includes at least an outer layer of a probe material. The method also includes, during the production of the probe tip body or after the production, forming a mask layer on the outer layer of probe material. Further, the method includes subjecting the probe tip body to a plasma etch procedure. The mask layer acts as an etch mask for the plasma etch procedure. The plasma etch procedure and the etch mask are configured to produce one or more tip portions formed of the probe material. The one or more tip portions are smaller and more pointed than the probe tip body prior to the plasma etch procedure.

In some embodiments, a selective cyclic (optionally dry) etching of a first surface of a substrate relative to a second surface of the substrate in a reaction chamber by chemical atomic layer etching comprises forming a modification layer using a first plasma and etching the modification layer. The first surface comprises carbon and/or nitride and the second surface does not comprise carbon and/or nitride.

In some embodiments, a selective cyclic (optionally dry) etching of a first surface of a substrate relative to a second surface of the substrate in a reaction chamber by chemical atomic layer etching comprises forming a modification layer using a first plasma and etching the modification layer. The first surface comprises carbon and/or nitride and the second surface does not comprise carbon and/or nitride.

The present invention relates to a free-standing single crystalline diamond part and a single crystalline diamond part production method. The method includes the steps of: providing a single crystalline diamond substrate or layer; providing a first adhesion layer on the substrate or layer; providing a second adhesion layer on the first adhesion layer: providing a mask layer on the second adhesion layer; forming at least one indentation or a plurality of indentations through the mask layer and the first and second adhesion layers to expose a portion or portions of the single crystalline diamond substrate or layer; and etching the exposed portion or portions of the single crystalline diamond substrate or layer and etching entirely through the single crystalline diamond substrate or layer.

The present invention relates to a free-standing single crystalline diamond part and a single crystalline diamond part production method. The method includes the steps of: providing a single crystalline diamond substrate or layer; providing a first adhesion layer on the substrate or layer; providing a second adhesion layer on the first adhesion layer: providing a mask layer on the second adhesion layer; forming at least one indentation or a plurality of indentations through the mask layer and the first and second adhesion layers to expose a portion or portions of the single crystalline diamond substrate or layer; and etching the exposed portion or portions of the single crystalline diamond substrate or layer and etching entirely through the single crystalline diamond substrate or layer.

Provided is a surface treatment method for a SiC substrate (40), the method being capable of controlling whether to generate a step bunching or the type of step bunching that is generated. In the surface treatment method in which the surface of the SiC substrate (40) is etched by heating the SiC substrate (40) under Si vapor pressure, an etching mode and an etching depth which are determined at least on the basis of an etching rate, are controlled to etch the SiC substrate (40), so that a surface pattern of the SiC substrate (40) after etching treatment is controlled.

Provided is a surface treatment method for a SiC substrate (40), the method being capable of controlling whether to generate a step bunching or the type of step bunching that is generated. In the surface treatment method in which the surface of the SiC substrate (40) is etched by heating the SiC substrate (40) under Si vapor pressure, an etching mode and an etching depth which are determined at least on the basis of an etching rate, are controlled to etch the SiC substrate (40), so that a surface pattern of the SiC substrate (40) after etching treatment is controlled.