Methods and devices for epitaxially growing boron doped silicon germanium layers. The layers may be used, for example, as a p-type source and/or drain regions in field effect transistors.

Methods and devices for epitaxially growing boron doped silicon germanium layers. The layers may be used, for example, as a p-type source and/or drain regions in field effect transistors.

Embodiments of the present disclosure generally relate to methods for forming epitaxial layers on a semiconductor device. In one or more embodiments, methods include removing oxides from a substrate surface during a cleaning process, flowing a processing reagent containing a silicon source and exposing the substrate to the processing reagent during an epitaxy process, and stopping the flow of the processing reagent. The method also includes flowing a purging gas and pumping residues from the processing system, stopping the flow of the purge gas, flowing an etching gas and exposing the substrate to the etching gas. The etching gas contains hydrogen chloride and at least one germanium and/or chlorine compound. The method further includes stopping the flow of the at least one compound while continuing the flow of the hydrogen chloride and exposing the substrate to the hydrogen chloride and stopping the flow of the hydrogen chloride.

Embodiments of the present disclosure generally relate to methods for forming epitaxial layers on a semiconductor device. In one or more embodiments, methods include removing oxides from a substrate surface during a cleaning process, flowing a processing reagent containing a silicon source and exposing the substrate to the processing reagent during an epitaxy process, and stopping the flow of the processing reagent. The method also includes flowing a purging gas and pumping residues from the processing system, stopping the flow of the purge gas, flowing an etching gas and exposing the substrate to the etching gas. The etching gas contains hydrogen chloride and at least one germanium and/or chlorine compound. The method further includes stopping the flow of the at least one compound while continuing the flow of the hydrogen chloride and exposing the substrate to the hydrogen chloride and stopping the flow of the hydrogen chloride.

A process of structuring a diamond substrate, comprising the steps of (a) depositing an adhesion layer on a face of the diamond substrate; (b) coating a resist layer on the adhesion layer; (c) removing parts of the resist layer so as to expose parts of the adhesion layer and form a corresponding structuring mask; (d) etching the adhesion layer and the diamond substrate (2) through the structuring mask so as to structure the diamond substrate; wherein the adhesion layer is a non-metallic compound comprising oxides.

A process of structuring a diamond substrate, comprising the steps of (a) depositing an adhesion layer on a face of the diamond substrate; (b) coating a resist layer on the adhesion layer; (c) removing parts of the resist layer so as to expose parts of the adhesion layer and form a corresponding structuring mask; (d) etching the adhesion layer and the diamond substrate (2) through the structuring mask so as to structure the diamond substrate; wherein the adhesion layer is a non-metallic compound comprising oxides.

A laser activated luminescence system is provided. Another aspect pertains to a system employing a plasma assisted vapor deposition reactor which creates diamond layers on a substrate, in combination with a laser system to at least photoactivate and anneal the diamond layers. Yet another aspect of the present system uses a laser to assist with placement of color centers, such as nitrogen vacancy centers, in diamond. The present method uses lasers to manufacture more than two activated nitrogen vacancy center nodes in a diamond substrate, with nanometer spatial resolution and at a predetermined depth.

A laser activated luminescence system is provided. Another aspect pertains to a system employing a plasma assisted vapor deposition reactor which creates diamond layers on a substrate, in combination with a laser system to at least photoactivate and anneal the diamond layers. Yet another aspect of the present system uses a laser to assist with placement of color centers, such as nitrogen vacancy centers, in diamond. The present method uses lasers to manufacture more than two activated nitrogen vacancy center nodes in a diamond substrate, with nanometer spatial resolution and at a predetermined depth.

This method for producing a body obtained by processing a solid carbon-containing material includes: a step of preparing the solid carbon-containing material having at least a surface composed of solid carbon; and a step of processing the solid carbon-containing material. The step of processing the solid carbon-containing material includes: a sub-step of forming non-diamond carbon by heat-treating the solid carbon in the surface of the solid carbon-containing material; and a sub-step of removing at least a part of the non-diamond carbon.

This method for producing a body obtained by processing a solid carbon-containing material includes: a step of preparing the solid carbon-containing material having at least a surface composed of solid carbon; and a step of processing the solid carbon-containing material. The step of processing the solid carbon-containing material includes: a sub-step of forming non-diamond carbon by heat-treating the solid carbon in the surface of the solid carbon-containing material; and a sub-step of removing at least a part of the non-diamond carbon.