Through the procedures of pretreatment, temperature swing adsorption (TSA) coarse desorption, pressure swing adsorption (PSA) purification and hydrogen purification, the hydrogenous waste gas from various procedures in the manufacturing process of semiconductor (especially silicon wafer), including the off-gas from chemical vapor deposition (CVD), doping (diffusion and ion implantation), photolithography and cleaning, the combusted and washed discharged gas of the off-gas in other procedures after field treatment and centralized treatment, or the hydrogenous waste gas entering the hydrogen discharge system are purified to meet the standard for the electronic grade hydrogen required for the manufacturing process of semiconductor, the recycling of hydrogen resources is realized, and the yield of hydrogen is greater than or equal to 70-85%. The present invention solves the technical difficulty the normal-pressure waste hydrogen recovered in the manufacturing process of semiconductor can't be returned to the manufacturing process of semiconductor for reuse.

Through the procedures of pretreatment, temperature swing adsorption (TSA) coarse desorption, pressure swing adsorption (PSA) purification and hydrogen purification, the hydrogenous waste gas from various procedures in the manufacturing process of semiconductor (especially silicon wafer), including the off-gas from chemical vapor deposition (CVD), doping (diffusion and ion implantation), photolithography and cleaning, the combusted and washed discharged gas of the off-gas in other procedures after field treatment and centralized treatment, or the hydrogenous waste gas entering the hydrogen discharge system are purified to meet the standard for the electronic grade hydrogen required for the manufacturing process of semiconductor, the recycling of hydrogen resources is realized, and the yield of hydrogen is greater than or equal to 70-85%. The present invention solves the technical difficulty the normal-pressure waste hydrogen recovered in the manufacturing process of semiconductor can't be returned to the manufacturing process of semiconductor for reuse.

Methods and systems are disclosed for using industrial waste for the production of hydrogen gas. The method includes examining a ph level of the industrial waste, removing contaminate from the industrial waste, conditioning and concentrating the industrial waste to a proton-rich solution, and using the resulting proton-rich solution as the proton source in a hydrogenase catalyzed hydrogen production system.

Methods and systems are disclosed for using industrial waste for the production of hydrogen gas. The method includes examining a ph level of the industrial waste, removing contaminate from the industrial waste, conditioning and concentrating the industrial waste to a proton-rich solution, and using the resulting proton-rich solution as the proton source in a hydrogenase catalyzed hydrogen production system.

Process for manufacturing a hydrogen-containing synthesis gas from a natural gas feedstock, comprising the conversion of said natural gas into a raw product gas and purification of said product gas, the process having a heat input provided by combustion of a fuel; said process comprises a step of conversion of a carbonaceous feedstock, and at least a portion of said fuel is a gaseous fuel obtained by said step of conversion of said carbonaceous feedstock, and the Wobbe Index of said fuel is increased by a step of carbon dioxide removal or methanation.

Process for manufacturing a hydrogen-containing synthesis gas from a natural gas feedstock, comprising the conversion of said natural gas into a raw product gas and purification of said product gas, the process having a heat input provided by combustion of a fuel; said process comprises a step of conversion of a carbonaceous feedstock, and at least a portion of said fuel is a gaseous fuel obtained by said step of conversion of said carbonaceous feedstock, and the Wobbe Index of said fuel is increased by a step of carbon dioxide removal or methanation.

The present invention provides a hydrogen oxidation catalyst including a titania support on which a platinum cluster is supported, wherein the platinum cluster includes Pt0, and the number of terrace crystal surfaces among the terrace, step, and kink crystal surfaces formed by the Pt0 is larger than the number of the step and kink crystal surfaces.

A drying apparatus of porous material includes a reduced-pressure fermentation dryer configured to: store porous material containing water in an airtight container; heat and stir the porous material under reduced pressure so that a temperature of the porous material is within a predetermined temperature range; feed microorganisms into the airtight container so that the microorganisms enter pores of the porous material; and evaporate the water contained in the porous material by fermentation heat by the microorganisms so as to dry the porous material.

In a method for cooling a hot synthesis gas containing at least one condensable constituent part, in particular tar, during which the synthesis gas in a multi-stage cooling process passes through a first cooling stage, a second cooling stage and a third cooling stage one after the other and the synthesis gas after an at least partial cooling is at least subjected to a separation step for separating the at least one condensable constituent part, the synthesis gas is cooled in the first cooling stage to a temperature above the condensation temperature of the at least one condensable constituent part and the second cooling stage comprises the recirculating of a part quantity of synthesis gas branched off after the third cooling stage and the at least one separation step into the synthesis gas flow.

In a method for cooling a hot synthesis gas containing at least one condensable constituent part, in particular tar, during which the synthesis gas in a multi-stage cooling process passes through a first cooling stage, a second cooling stage and a third cooling stage one after the other and the synthesis gas after an at least partial cooling is at least subjected to a separation step for separating the at least one condensable constituent part, the synthesis gas is cooled in the first cooling stage to a temperature above the condensation temperature of the at least one condensable constituent part and the second cooling stage comprises the recirculating of a part quantity of synthesis gas branched off after the third cooling stage and the at least one separation step into the synthesis gas flow.