The present invention relates to silicon carbide (SiC) devices having a surface that has been activated to enhance properties including strength, porosity, and bioactivity. Activation may include forming silica gel with or without silicon nitride on the surface. The invention further relates to methods of making the devices and using the devices.

Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I:

##STR00001##

wherein R.sup.1 is selected from linear or branched C.sub.3 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.10 alkenyl group, linear or branched C.sub.3 to C.sub.10 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, electron withdrawing group, and C.sub.6 to C.sub.10 aryl group; R.sup.2 is selected from hydrogen, linear or branched C.sub.1 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.6 alkenyl group, linear or branched C.sub.3 to C.sub.6 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, C.sub.6 to C.sub.10 aryl group, linear or branched C.sub.1 to C.sub.6 fluorinated alkyl group, electron withdrawing group, and C.sub.4 to C.sub.10 aryl group; optionally wherein R.sup.1 and R.sup.2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I:

##STR00001##

wherein R.sup.1 is selected from linear or branched C.sub.3 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.10 alkenyl group, linear or branched C.sub.3 to C.sub.10 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, electron withdrawing group, and C.sub.6 to C.sub.10 aryl group; R.sup.2 is selected from hydrogen, linear or branched C.sub.1 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.6 alkenyl group, linear or branched C.sub.3 to C.sub.6 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, C.sub.6 to C.sub.10 aryl group, linear or branched C.sub.1 to C.sub.6 fluorinated alkyl group, electron withdrawing group, and C.sub.4 to C.sub.10 aryl group; optionally wherein R.sup.1 and R.sup.2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: ##STR00001##
wherein R.sup.1 is selected from linear or branched C.sub.3 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.10 alkenyl group, linear or branched C.sub.3 to C.sub.10 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, electron withdrawing group, and C.sub.6 to C.sub.10 aryl group; R.sup.2 is selected from hydrogen, linear or branched C.sub.1 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.6 alkenyl group, linear or branched C.sub.3 to C.sub.6 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, C.sub.6 to C.sub.10 aryl group, linear or branched C.sub.1 to C.sub.6 fluorinated alkyl group, electron withdrawing group, and C.sub.4 to C.sub.10 aryl group; optionally wherein R.sup.1 and R.sup.2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: ##STR00001##
wherein R.sup.1 is selected from linear or branched C.sub.3 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.10 alkenyl group, linear or branched C.sub.3 to C.sub.10 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, electron withdrawing group, and C.sub.6 to C.sub.10 aryl group; R.sup.2 is selected from hydrogen, linear or branched C.sub.1 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.6 alkenyl group, linear or branched C.sub.3 to C.sub.6 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, C.sub.6 to C.sub.10 aryl group, linear or branched C.sub.1 to C.sub.6 fluorinated alkyl group, electron withdrawing group, and C.sub.4 to C.sub.10 aryl group; optionally wherein R.sup.1 and R.sup.2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

Provided is a silicon nitride powder containing silicon nitride and carbon, wherein a mass proportion Cp of carbon with respect to the entire powder is 0.05% or more, and wherein a mass proportion Cs of carbon contained in a surface portion of the powder with respect to the entire powder is 0.05% or less. Provided is a method for manufacturing silicon nitride powder, the method including: molding a kneaded material containing a silicon powder and an organic binder to obtain a molded body, degreasing the molded body by heating the molded body at 900 C. or more and less than 1100 C. for 1 hour or more; firing the molded body in a mixed atmosphere containing nitrogen and at least one selected from a group consisting of hydrogen and ammonia to obtain a fired product containing silicon nitride and carbon; and pulverizing the fired product.

Method for producing a powder comprising particles (26) comprising amorphous, micro- or nano-crystalline Silicon nitride. The method comprises the steps of supplying a reactant gas (12) containing Silicon, and a reactant gas (12) containing Nitrogen, to a reaction chamber (16) of a reactor (10), and heating said reactant gases (12) to a temperature in the range of 510 C. to 1300 C. which is sufficient for thermal decomposition or reduction of the reactant gases (12) to take place inside the reaction chamber (16) to thereby produce a powder of amorphous, micro- or nano-crystalline particles (26) comprising Silicon nitride (SiNx) in which the atomic ratio of Silicon to Nitrogen is in the range 1:0.2 to 1:0.9. The produced powder of particles (26) may be used to produce a film, an electrode, such as an anode, for a battery, such as a Lithium ion battery.

A synthesis method of silicon nitride powder including preparing mixed powder having a particle size of 8 to 10 m which includes 69 to 98 wt % of silicon powder, 1 to 30 wt % of -phase silicon nitride powder, and 1 to 10 wt % of silicon dioxide powder; performing heat treatment on the mixed powder in a nitrogen gas atmosphere of 0.85 to 1 atm at a temperature of 1,450 to 1,750 C. for 5 to 20 hours; and cooling the mixed powder gradually to obtain silicon nitride powder; and performing pressure sintering on a silicon nitride sintered body by filling the mixed powder into a mold and then keeping the mixed powder at a temperature of 1,750 to 1,850 C. for 2 to 6 hours while pressure of 150 to 300 kg/cm.sup.2 is applied thereto in a nitrogen gas atmosphere of 0.85 to 1 atm.

A process of producing silicon-containing materials includes converting a gas to a superheated state in which it is at least partly in plasma form, and contacting the superheated gas with a silicon-containing first starting material to form a mixture including the gas and silicon, wherein the silicon-containing materials are produced by adding to the gas or the mixture a second starting material that can enter into a chemical reaction directly with the silicon in the mixture, or breaks down thermally on contact with the superheated gas and/or the mixture, and steps a. and b. are effected spatially separately from one another.

A process for producing a silicon nitride powder characterized by comprising a step of providing a starting material powder containing not less than 90% by mass of a silicon powder; the step of filling a heat-resistant reaction vessel with the starting material powder; a step of obtaining a massive product thereof by a combustion synthesis reaction by igniting the starting material powder filled in the reaction vessel in a nitrogen atmosphere and permitting a heat of nitriding combustion of silicon to propagate to the whole starting material powder; and a step of mechanically milling the massive product by a dry method.