Porous aluminum nitride (AlN) provides a greater surface area and higher permeability, which is especially desirable for advanced functional application. Porous or bulk aluminum nitride is very difficult to manufacture due mainly to its high melting point (e.g., 2200 degrees Celsius). A new processing method synthesizes porous aluminum nitride through a complete transformation from porous aluminum using a remarkably low nitriding or sintering temperature. The manufactured porous aluminum nitride foam can be used for such applications as filters, separators, heat sinks, ballistic armor, electronic packaging, light- and field-emission devices, and highly wear-resistant composites when infiltrated with metal such as aluminum, titanium, or copper.

A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an Al.sub.2O.sub.3 substrate placed in the reaction chamber.

A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an Al.sub.2O.sub.3 substrate placed in the reaction chamber.

The present invention relates to a method of manufacturing aluminum nitride and aluminum nitride prepared by the same. Pure aluminum powder having a median particle size (D50) of 1.52 m was heated to a temperature in a range of 595 C.900 C. in a nitrogen containing atmosphere comprising nitrogen and argon gases, at atmospheric pressure for one hour to obtain aluminum nitride with a degree of nitridation exceeding 93%. According to the present invention aluminum nitride may be produced with high yield using a simple and inexpensive one-step heating method in a relatively short period of time.

A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an Al.sub.2O.sub.3 substrate placed in the reaction chamber.

A gettered polycrystalline group III metal nitride is formed by heating a group III metal with an added getter in a nitrogen-containing gas. Most of the residual oxygen in the gettered polycrystalline nitride is chemically bound by the getter. The gettered polycrystalline group III metal nitride is useful as a raw material for ammonothermal growth of bulk group III nitride crystals.

A method for producing aluminum nitride is to disclose, which includes injecting a nitrogen-containing gas and a pure aluminum material into a high-temperature jet mill. In the high-temperature jet mill, the injected pure aluminum material reacts with the nitrogen and forms aluminum nitride on the surface. The aluminum nitride is continuously to pulverize in the high-temperature jet mill to form fine aluminum nitride powder. According to the present disclosure, unnecessary cost and complicated processes in elevated-temperature agglomeration is to avoid.

A molten iron-assisted method for producing aluminum nitride (AlN) and a device thereof are disclosed. Pure aluminum is introduced into a vacuumed molten iron bath continuously for producing a molten iron bath having the aluminum, then nitrogen is introduced into the molten iron bath having the aluminum. Production of AIN is controlled by having the concentration of aluminum in the molten iron bath having the aluminum controlled. At the time AIN is formed continuously in the molten iron bath having the aluminum, AIN floats to the surface of the molten iron bath having the aluminum. Ar and N.sub.2 may be blown and dust is removed by static electrons thereafter, such that pure aluminum nitride powder can be collected. Finally, the used gas is recycled and reused.

A method for producing aluminum nitride is to disclose, which includes injecting a nitrogen-containing gas and a pure aluminum material into a high-temperature jet mill. In the high-temperature jet mill, the injected pure aluminum material reacts with the nitrogen and forms aluminum nitride on the surface. The aluminum nitride is continuously to pulverize in the high-temperature jet mill to form fine aluminum nitride powder. According to the present disclosure, unnecessary cost and complicated processes in elevated-temperature agglomeration is to avoid.

An AlN crystal preparation method includes using at least one element excluding Si that fulfills the condition that a compound is not formed with either Al or N or the condition that a compound is formed with either Al or N but the standard free energy of formation of said compound is greater than the standard free energy of formation of AlN. In the preparation method, a composition including at least Al and the element is melted. Al vapor and nitrogen gas are reacted at a prescribed reaction temperature. AlN crystals are formed.