C01B21/0823

Bisaminoalkoxysilane compounds and methods for using same to deposit silicon-containing films

Bisaminoalkoxysilanes of Formula I, and methods using same, are described herein:
R.sup.1Si(NR.sup.2R.sup.3)(NR.sup.4R.sup.5)OR.sup.6I
where R.sup.1 is selected from hydrogen, a C.sub.1 to C.sub.10 linear alkyl group, a C.sub.3 to C.sub.10 branched alkyl group, a C.sub.3 to C.sub.10 cyclic alkyl group, a C.sub.3 to C.sub.10 alkenyl group, a C.sub.3 to C.sub.10 alkynyl group, a C.sub.4 to C.sub.10 aromatic hydrocarbon group; R.sup.2, R.sup.3, R.sup.4, and R.sup.5 are each independently selected from hydrogen, a C.sub.4 to C.sub.10 branched alkyl group, a C.sub.3 to C.sub.10 cyclic alkyl group, a C.sub.3 to C.sub.10 alkenyl group, a C.sub.3 to C.sub.10 alkynyl group, and a C.sub.4 to C.sub.10 aromatic hydrocarbon group; R.sup.6 is selected from a C.sub.1 to C.sub.10 linear alkyl group, a C.sub.3 to C.sub.10 branched alkyl group, a C.sub.3 to C.sub.10 cyclic alkyl group, a C.sub.3 to C.sub.10 alkenyl group, a C.sub.2 to C.sub.10 alkynyl group, and a C.sub.4 to C.sub.10 aromatic hydrocarbon group.

Nitrogen-containing luminescent particle and method for preparing same, nitrogen-containing illuminant, and luminescent device

The present invention discloses a nitrogen-containing luminescent particle, characterized in that a structure of the nitrogen-containing luminescent particle is divided into an oxygen poor zone, a transition zone, and an oxygen rich zone from a core to an outer surface of the particle depending on an increasing oxygen content, the oxygen poor zone being predominantly a nitride luminescent crystal or oxygen-containing solid solution thereof, the transition zone being predominantly a nitroxide material, the oxygen rich zone being predominantly an oxide material or oxynitride material; the nitride luminescent crystal or oxygen-containing solid solution thereof has a chemical formula of M.sub.m-m1A.sub.a1B.sub.b1O.sub.o1N.sub.n1:R.sub.m1, the nitroxide material has a chemical formula of M.sub.m-m2A.sub.a2B.sub.b2O.sub.o2N.sub.n2:R.sub.m2, the oxide material or oxynitride material has a chemical formula of M.sub.m-m3A.sub.a3B.sub.b3O.sub.o3N.sub.n3:R.sub.m3. The nitrogen-containing luminescent particle and the nitrogen-containing illuminant of the present invention have good chemical stability, good aging and light decay resistance, and high luminescent efficiency, and are useful for various luminescent devices. The manufacturing method of the present invention is easy and reliable, and useful for industrial mass production.

Fracture-resistant layered-substrates and articles including the same

Embodiments of a layered-substrate comprising a substrate and a layer disposed thereon, wherein the layered-substrate is able to withstand fracture when assembled with a device that is dropped from a height of at least 100 cm onto a drop surface, are disclosed. The layered-substrate may exhibit a hardness of at least about 10 GPa or at least about 20 GPa. The substrate may include an amorphous substrate or a crystalline substrate. Examples of amorphous substrates include glass, which is optionally chemically strengthened. Examples of crystalline substrates include single crystal substrates (e.g. sapphire) and glass ceramics. Articles and/or devices including such layered-substrate and methods for making such devices are also disclosed.

Barrier film

Provided is a barrier film, comprising: a base layer; and an inorganic layer including Si, N, and O, wherein the inorganic layer has a thickness of 600 nm or less, and the film has a water vapor transmission rate of 0.5?10.sup.?3 g/m.sup.2.Math.day as measured under conditions of a temperature of 38? C. and 100% relative humidity. The barrier film has excellent barrier properties and optical properties and can be used for electronic products sensitive to moisture.

METHOD FOR PREPARING PHOTOMASK BLANK, PHOTOMASK BLANK, METHOD FOR PREPARING PHOTOMASK, PHOTOMASK, AND METALLIC CHROMIUM TARGET

A method for preparing a photomask blank comprising a transparent substrate and a chromium-containing film contiguous thereto involves the step of depositing the chromium-containing film by sputtering a metallic chromium target having an Ag content of up to 1 ppm. When a photomask prepared from the photomask blank is repeatedly used in patternwise exposure to ArF excimer laser radiation, the number of defects formed on the photomask is minimized.

N-H FREE AND SI-RICH PER-HYDRIDOPOLYSILZANE COMPOSITIONS, THEIR SYNTHESIS, AND APPLICATIONS

Solid or liquid NH free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [N(SiH.sub.3).sub.x(SiH.sub.2-).sub.y], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.

Porous silicon oxynitride materials for chromatographic separation and method of their preparation

Novel material for chromatographic separations, processes for its preparation, and separation devices containing the chromatographic material. In particular, the novel materials are porous silicon oxynitride materials, which desirably can be surface modified and have enhanced stability at high pH. The novel porous silicon oxynitride material may offer efficient chromatographic separations, and hold great promise as packing material for chromatographic separations.

SILVER DIFFUSION BARRIER MATERIAL, SILVER DIFFUSION BARRIER, AND SEMICONDUCTOR DEVICE USING THE SAME

By using silicon oxynitride with an oxygen content of 4.2 to 37.5 at % as a material for a barrier layer, adhesiveness similar to that of silicon oxide and an Ag diffusion prevention property similar to that of silicon nitride can be realized. In particular, in a semiconductor device in which a plurality of silicon chips is vertically stacked by through-silicon vias, Ag is prevented from being diffused into Si and adhesiveness to Si becomes favorable when an Ag/polypyrrole complex is used as a conductive filling material used for the formation of a barrier layer provided on the inner surface of the via.

ANODE ACTIVE MATERIAL AND ITS MANUFACTURING METHOD, LITHIUM ION BATTERY AND ALL-SOLID-STATE LITHIUM THIN-FILM BATTERY USING THE SAME

The present invention relates to a transparent anode active material having excellent light transmittance and electrical conductivity characteristics and a manufacturing method thereof, and a lithium ion battery and an all-solid-state lithium thin-film battery based on the same and having excellent charge/discharge capacity and charge/discharge rate, wherein the transparent anode active material according to the present invention is characterized by comprising a material of the following Chemical Formula 1: Ag.sub.xSiO.sub.yN wherein x is 0<x0.8 and y is 0<y1.

Apparatus for preparing dimeric and trimeric silicon compounds

An apparatus for preparing dimeric and trimeric silicon compounds is provided. The apparatus includes a reactor for generating a nonthermal plasma; a collecting vessel in product flow communication with the nonthermal plasma reactor; and a series of at least three rectification columns in flow communication with the collecting vessel.