There are provided a phosphor which is a divalent europium-activated oxynitride phosphor substantially represented by General formula (A): Eu.sub.aSi.sub.bAl.sub.cO.sub.dN.sub.e, a divalent europium-activated oxynitride phosphor substantially represented by General formula (B): MI.sub.fEu.sub.gSi.sub.hAl.sub.kO.sub.mN.sub.n or a divalent europium-activated nitride phosphor substantially represented by General formula (C): (MII.sub.1-pEu.sub.p)MIIISiN.sub.3, having a reflectance of light emission in a longer wavelength region of visible light than a peak wavelength of 95% or larger, and a method of producing such phosphor; a nitride phosphor and an oxynitride phosphor which emit light efficiently and stably by the light having a wavelength ranging from 430 to 480 nm from a semiconductor light emitting device by means of a light emitting apparatus using such phosphor, and a producing method of such phosphor; and a light emitting apparatus having stable characteristics and realizing high efficiency.

There are provided a phosphor which is a divalent europium-activated oxynitride phosphor substantially represented by General formula (A): Eu.sub.aSi.sub.bAl.sub.cO.sub.dN.sub.e, a divalent europium-activated oxynitride phosphor substantially represented by General formula (B): MI.sub.fEu.sub.gSi.sub.hAl.sub.kO.sub.mN.sub.n or a divalent europium-activated nitride phosphor substantially represented by General formula (C): (MII.sub.1-pEu.sub.p)MIIISiN.sub.3, having a reflectance of light emission in a longer wavelength region of visible light than a peak wavelength of 95% or larger, and a method of producing such phosphor; a nitride phosphor and an oxynitride phosphor which emit light efficiently and stably by the light having a wavelength ranging from 430 to 480 nm from a semiconductor light emitting device by means of a light emitting apparatus using such phosphor, and a producing method of such phosphor; and a light emitting apparatus having stable characteristics and realizing high efficiency.

There are provided a phosphor which is a divalent europium-activated oxynitride phosphor substantially represented by General formula (A): Eu.sub.aSi.sub.bAl.sub.cO.sub.dN.sub.e, a divalent europium-activated oxynitride phosphor substantially represented by General formula (B): MI.sub.fEu.sub.gSi.sub.hAl.sub.kO.sub.mN.sub.n or a divalent europium-activated nitride phosphor substantially represented by General formula (C): (MII.sub.1-pEu.sub.p)MIIISiN.sub.3, having a reflectance of light emission in a longer wavelength region of visible light than a peak wavelength of 95% or larger, and a method of producing such phosphor; a nitride phosphor and an oxynitride phosphor which emit light efficiently and stably by the light having a wavelength ranging from 430 to 480 nm from a semiconductor light emitting device by means of a light emitting apparatus using such phosphor, and a producing method of such phosphor; and a light emitting apparatus having stable characteristics and realizing high efficiency.

A europium-doped -sialon phosphor, in which, when the ratio of an aluminum element at a depth of 8 nm from the surface of the phosphor, which is obtained by X-ray photoelectron spectroscopy, is indicated by P.sub.8 [at %], and the ratio of an aluminum element at a depth of 80 nm from the surface of the phosphor is indicated by P.sub.80 [at %], P.sub.8/P.sub.800.9 is satisfied. A light emitting device containing this -sialon phosphor.