A SiH-free vinyldisilane compound, which is free of (lacks) a silicon-bonded hydrogen atom. The use of the SiH-free vinyldisilane compound, or a collection of such compounds, as a starting material or precursor for synthesizing or making silicon-heteroatom compounds. The silicon-heteroatom compounds synthesized therefrom; films of and devices containing the silicon-heteroatom compounds; methods of making the SiH-free vinyldisilane compound, silicon-heteroatom compounds, films, and devices; and uses of the SiH-free vinyldisilanes, silicon-heteroatom compounds, films, and devices.

A SiH-free vinyldisilane compound, which is free of (lacks) a silicon-bonded hydrogen atom. The use of the SiH-free vinyldisilane compound, or a collection of such compounds, as a starting material or precursor for synthesizing or making silicon-heteroatom compounds. The silicon-heteroatom compounds synthesized therefrom; films of and devices containing the silicon-heteroatom compounds; methods of making the SiH-free vinyldisilane compound, silicon-heteroatom compounds, films, and devices; and uses of the SiH-free vinyldisilanes, silicon-heteroatom compounds, films, and devices.

Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH.sub.3).sub.2NSiH.sub.2X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C.sub.4-C.sub.10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.

Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH.sub.3).sub.2NSiH.sub.2X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C.sub.4-C.sub.10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.

Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH.sub.3).sub.2NSiH.sub.2X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C.sub.4-C.sub.10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.

Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH.sub.3).sub.2NSiH.sub.2X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C.sub.4-C.sub.10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.