The present application discloses a method for preparing an indium phosphide (InP) nanocrystal by using a novel phosphorus precursor as a raw material, and an InP nanocrystal having different wavelengths prepared by the method. The preparation method of the InP nanocrystal includes a step of: using M-(O—C≡P).sub.n as one of reaction precursors, where, M is a metal element, and n is a valence state of the M element. In this present application, M-(O—C≡P).sub.n serves as one of reaction precursors; due to that the metal element M and the element P are from the same reaction precursor, a nanocrystal of a nanocrystal core containing In, P and a metal element M can be prepared.

Tetrapod-shaped quantum dots having a tetrapod shape in which a core includes a plurality of arms, and each of the arms have a different growth degree depending on the crystal direction.

Methods of making a ceramic of a Group 13-15 type or a Group 13-15-16 type by thermolyzing a discrete molecular precursor to the ceramic in an oxygen-containing atmosphere. In some embodiments, the discrete molecular precursor is bench-stable and comprises a Lewis acid-base pair or small cyclic compound containing at last one Group 13 element and at least one Group 15 element but does not include indium and phosphorus in combination with one another unless a Group 16 element is present. The thermolysis can be carried out in air, at atmospheric pressure, and at a temperature below about 400° C., if desired. In some embodiments, the discrete molecular precursor can be placed in a mold having a desired shape and the thermolysis performed while the discrete molecular precursor is in the mold so as to produce a ceramic product having the desired shape.

Methods of synthesizing colloidal ternary Group III-V nanocrystals are provided. Also provided are the colloidal ternary Group III-V nanocrystals made using the methods. In the methods, molten inorganic salts are used as high temperature solvents to carry out cation exchange reactions that convert binary nanocrystals into ternary nanocrystals.

The present invention relates to anisotropic nanoparticles containing semiconductor compounds of group III and group V elements and a manufacturing method therefor and, more specifically, to anisotropic nanoparticles and a manufacturing method therefor, wherein the anisotropic nanoparticles have an irregular shape, such as a branched structure, a hyper-branched/dendrimer structure, or an aggregated structure with an irregular needle-shaped surface, in which two or more anisotropic shaped unit structures containing semiconductor compounds of group III and group V elements are combined.

The invention relates to InP-based nanoclusters that include indium and phosphorus and further include zinc, chlorine, or a combination thereof, and to a method of preparing the InP-based nanoparticles including heating the InP-based nanoclusters in the presence of zinc, chlorine, or a combination thereof.

A quantum dot-polymer composite including a polymer matrix; and core-shell quantum dots dispersed in the polymer matrix, wherein the core-shell quantum dots include a semiconductor nanocrystal core including indium, zinc, and phosphorus and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the shell including zinc, selenium, and sulfur. The core-shell quantum dots do not include cadmium, the core-shell quantum dots are configured to emit green light, the core-shell quantum dots have a mole ratio of phosphorus to indium of greater than or equal to about 0.75, and the core-shell quantum dots have a mole ratio of zinc to indium of greater than or equal to about 35, and a method of producing the core-shell quantum dots, and a display device including a light emitting element that includes the quantum dot-polymer composite.

The present application discloses a method for preparing an indium phosphide (InP) nanocrystal by using a novel phosphorus precursor as a raw material, and an InP nanocrystal having different wavelengths prepared by the method. The preparation method of the InP nanocrystal includes a step of: using M-(O—C≡P).sub.n as one of reaction precursors, where, M is a metal element, and n is a valence state of the M element. In this present application, M-(O—C≡P).sub.n serves as one of reaction precursors; due to that the metal element M and the element P are from the same reaction precursor, a nanocrystal of a nanocrystal core containing In, P and a metal element M can be prepared.

The present invention relates to a method for synthesizing a semiconducting nanosized material.

A quantum dot device, a method of manufacturing the same, a thin film having a multilayered structure, and an electronic device including the same. The quantum dot device includes a first electrode and a second electrode, a quantum dot layer disposed between the first electrode and the second electrode, and a hole transport layer disposed between the quantum dot layer and the first electrode, wherein the hole transport layer includes a first hole transport layer including a three-dimensional structure perovskite thin film and a second hole transport layer including a two-dimensional structure perovskite thin film.