Patent classifications
C01B25/087
Gas phase enhancement of emission color quality in solid state LEDs
Light-emitting materials are made from a porous light-emitting semiconductor having quantum dots (QDs) disposed within the pores. According to some embodiments, the QDs have diameters that are essentially equal in size to the width of the pores. The QDs are formed in the pores by exposing the porous semiconductor to gaseous QD precursor compounds, which react within the pores to yield QDs. According to certain embodiments, the pore size limits the size of the QDs produced by the gas-phase reactions. The QDs absorb light emitted by the light-emitting semiconductor material and reemit light at a longer wavelength than the absorbed light, thereby down-converting light from the semiconductor material.
Nanocrystals including a group IIIA element and a group VA element, method, composition, device and other products
A nanocrystal comprising a semiconductor material comprising one or more elements of Group IIIA of the Periodic Table of Elements and one or more elements of Group VA of the Periodic Table of Elements, wherein the nanocrystal is capable of emitting light having a photoluminescence quantum efficiency of at least about 30% upon excitation. Also disclosed is a nanocrystal including a core comprising a first semiconductor material comprising one or more elements of Group IIIA of the Periodic Table of Elements and one or more elements of Group VA of the Periodic Table of Elements, and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the nanocrystal is capable of emitting light having a photoluminescence quantum efficiency of at least about 30% upon excitation. Also disclosed is a nanocrystal comprising a nanocrystal core and a shell comprising a semiconductor material disposed on at least a portion of the nanocrystal core, wherein the semiconductor material comprises at least three chemical elements and is obtainable by a process comprising adding a precursor for at least one of the chemical elements of the semiconductor material from a separate source to a nanocrystal core while simultaneously adding amounts of precursors for the other chemical elements of the semiconductor material. A population of nanocrystals, method for preparing nanocrystals, compositions, and devices including nanocrystals are also disclosed.
Precursor Composition and Method of Preparation Thereof, Inorganic Nanocrystals Preparation Method
The present disclosure provides a precursor composition and a method for preparing inorganic nanocrystals. The precursor composition is used to prepare inorganic nanocrystals and is in the form of a gel, the precursor composition includes a precursor and an organogel medium for dispersing the precursor, and the precursor is one or more of a cationic precursor, an anionic precursor. The precursor composition not only greatly expands the selection range of potential precursors and their concentration range, but also simplifies the synthesis system of the nanocrystals and minimizes the impact on the environment, and improves the stability or repeatability of the method of preparing the inorganic nanocrystals.
METHOD FOR PRODUCING QUANTUM DOT
Provided is a method for producing a quantum dot excellent in light stability by an industrially advantageous method. Provided is a method for producing a quantum dot, including: a washing step of washing a quantum dot by using an organic solvent capable of dissolving an impurity contained in a dispersion containing the quantum dot; and a surface-protecting step of adding a ligand being a specific phosphine compound to a dispersion of a washed quantum dot to protect a surface of the quantum dot with the ligand. The organic solvent in the washing step is preferably at least one selected from the group consisting of methanol, ethanol, acetone, 2-propanol, and acetonitrile.
Semiconductor nanoparticle complex, semiconductor nanoparticle complex dispersion liquid, semiconductor nanoparticle complex composition, semiconductor nanoparticle complex cured film, and purification method for semiconductor nanoparticle complex
Provided is a semiconductor nanoparticle complex in which a ligand is coordinated to a surface of a semiconductor nanoparticle. The semiconductor nanoparticle includes In and P, the ligand includes a mercapto fatty acid ester represented by the following general formula, and the mercapto fatty acid ester has an SP value of 9.30 or less. General formula: HS-R.sub.1-COOR.sub.2 (where R.sub.1 is a C.sub.1-11 hydrocarbon group and R.sub.2 is a C.sub.1-30 hydrocarbon group). The present invention can provide a semiconductor nanoparticle complex that keeps high fluorescence quantum yield before and after purification.
Semiconductor phosphide injection synthesis system and control method
A semiconductor phosphide injection synthesis system and a control method are provided, which belong to the technical field of preparation of semiconductor phosphides. The semiconductor phosphide injection synthesis system includes a furnace body, a shielding carrier box arranged above the furnace body by virtue of a lifting mechanism, a phosphorus source carrier arranged in the shielding carrier box, an injection pipe arranged below the phosphorus source carrier, and a crucible arranged at an inner bottom of the furnace body in a matched manner. The phosphorus source carrier includes a phosphorus source carrier main body, a phosphorus source carrier upper cover, a heating element base arranged at an inner bottom of the phosphorus source carrier main body, and a heating element arranged on the heating element base; a heat insulation layer is wrapped on an outer wall of the phosphorus source carrier; and an induction coil is arranged between the heat insulation layer and an inner wall of the shielding carrier box. By improving a device and method, the system stability can be improved, and an entire synthesis system achieves quantitative synthesis, which lowers the risk of explosion of the phosphorus source carrier.
Method of producing core/shell semiconductor nanoparticles
A method of producing core/shell semiconductor nanoparticles, the method comprising a shell formation step of adding a solution of group VI element precursor while adding a solution of zinc branched chain carboxylate to a core particle-dispersed solution to allow the zinc branched chain carboxylate to react with the group VI element precursor in presence of the core particles for forming a shell containing zinc and the group VI element on surfaces of the core particles. The present invention can provide a simple semiconductor nanoparticle production method of producing core/shell semiconductor nanoparticles with excellent optical properties when two or more types of the shell precursors are used to produce the core/shell semiconductor nanoparticles.
SEMICONDUCTOR NANOPARTICLE COMPLEX, SEMICONDUCTOR NANOPARTICLE COMPLEX DISPERSION LIQUID, SEMICONDUCTOR NANOPARTICLE COMPLEX COMPOSITION, SEMICONDUCTOR NANOPARTICLE COMPLEX CURED FILM, AND PURIFICATION METHOD FOR SEMICONDUCTOR NANOPARTICLE COMPLEX
Provided is a semiconductor nanoparticle complex in which a ligand is coordinated to a surface of a semiconductor nanoparticle. The semiconductor nanoparticle includes In and P, the ligand includes a mercapto fatty acid ester represented by the following general formula, and the mercapto fatty acid ester has an SP value of 9.30 or less. General formula: HSR.sub.1COOR.sub.2 (where R.sub.1 is a C.sub.1-11 hydrocarbon group and R.sub.2 is a C.sub.1-30 hydrocarbon group). The present invention can provide a semiconductor nanoparticle complex that keeps high fluorescence quantum yield before and after purification.