A method for removing arsenic from a liquid includes adding a two-dimensional metal carbide adsorbent to the liquid to adsorb the arsenic from the liquid. The two-dimensional metal carbide adsorbent can include at least one MXene, having the formula M.sub.n+1X.sub.n, where n=1, 2 or 3, where M is an early transition metal, such as scandium (Sc), titanium (Ti), vanadium (V), chromium (Cr), yttrium (Y), zirconium (Zr), niobium (Nb), molybdenum (Mo) or the like, and X is either carbon or nitrogen. The MXene may be Ti.sub.3C.sub.2.

The present disclosure is directed to antennas for transmitting and/or receiving electrical signals comprising a MXene composition, devices comprising these antennas, and methods of transmitting and receiving signals using these antennas.

The present disclosure is directed to antennas for transmitting and/or receiving electrical signals comprising a MXene composition, devices comprising these antennas, and methods of transmitting and receiving signals using these antennas.

Out of sintered metal carbides having an extremely high melting point, there is provided a sintered metal carbide which can be produced without having to perform sintering under high pressure such as hot pressing or HIP, having a high relative density and excellent mechanical strength. A sintered metal carbide of at least one metal selected from the group consisting of elements of Groups 4 and 5 of the periodic table, wherein the sintered metal carbide contains Si element of 0.1 wtppm or more and 10,000 wtppm or less.

Out of sintered metal carbides having an extremely high melting point, there is provided a sintered metal carbide which can be produced without having to perform sintering under high pressure such as hot pressing or HIP, having a high relative density and excellent mechanical strength. A sintered metal carbide of at least one metal selected from the group consisting of elements of Groups 4 and 5 of the periodic table, wherein the sintered metal carbide contains Si element of 0.1 wtppm or more and 10,000 wtppm or less.

Provided are: composite particles having excellent oxidation resistance; and a method for producing composite particles. The composite particles are obtained by forming a composite of TiC and at least one of Zr and Si. In the method for producing composite particles, a titanium oxide powder and at least one of a zirconium oxide powder and a silicon oxide powder are used as raw material powders, and composite particles are produced using a gas phase method.

Water-based nanoparticle inks may be formulated to be compatible with printed electronic direct-write methods. The water-based nanoparticle inks may include a functional material (nanoparticle) in combination with an appropriate solvent system. A method may include dispersing nanoparticles in a solvent and printing a circuit in an aerosol jet process or plasma jet process.

Water-based nanoparticle inks may be formulated to be compatible with printed electronic direct-write methods. The water-based nanoparticle inks may include a functional material (nanoparticle) in combination with an appropriate solvent system. A method may include dispersing nanoparticles in a solvent and printing a circuit in an aerosol jet process or plasma jet process.

Aluminum (Al) hydrocarbon precursor compositions are provided that can be used for vapor deposition of transition metal carbide thin films, for example aluminum-doped transition metal carbide thin films such as Al-doped titanium carbide thin films. In some embodiments, the precursor compositions comprise one or more isomers of tritertbutyl aluminum (TTBA). In some embodiments the precursor compositions comprise at least 50% of Isomer 1 of TTBA, at least 50% of Isomer 2 of TTBA, or at least 20% of a combination of Isomer 1 and Isomer 2, where Isomer 1 has the formula Al(tert-Bu).sub.2(iso-Bu) and Isomer 2 has the formula Al(tert-Bu)(iso-Bu).sub.2. A container containing a precursor composition comprising at least 50% of Isomer 1 or Isomer 2 or at least 20% of a combination of Isomer 1 and 2 of TTBA can be attached to a vapor deposition reactor and used to deposit transition metal carbide thin films such as Al-doped titanium carbide thin films by atomic layer deposition or chemical vapor deposition.

Aluminum (Al) hydrocarbon precursor compositions are provided that can be used for vapor deposition of transition metal carbide thin films, for example aluminum-doped transition metal carbide thin films such as Al-doped titanium carbide thin films. In some embodiments, the precursor compositions comprise one or more isomers of tritertbutyl aluminum (TTBA). In some embodiments the precursor compositions comprise at least 50% of Isomer 1 of TTBA, at least 50% of Isomer 2 of TTBA, or at least 20% of a combination of Isomer 1 and Isomer 2, where Isomer 1 has the formula Al(tert-Bu).sub.2(iso-Bu) and Isomer 2 has the formula Al(tert-Bu)(iso-Bu).sub.2. A container containing a precursor composition comprising at least 50% of Isomer 1 or Isomer 2 or at least 20% of a combination of Isomer 1 and 2 of TTBA can be attached to a vapor deposition reactor and used to deposit transition metal carbide thin films such as Al-doped titanium carbide thin films by atomic layer deposition or chemical vapor deposition.