A process for producing solar grade silicon from silica sand employs a plurality of plasma furnaces to perform a sequence of chemical reactions together with other process steps to produce solar grade silicon. The plasma furnace generates a stable dirty air, donut-shaped plasma into which particulate matter can be introduced. The plasma in the first two stages is formed by gases from the chemical reactions and in the third from inert gasses. Cyclone separators are used to extract particulates from the plasma in an inert gas that prevents reverse reactions as the particular cools.

A process for producing solar grade silicon from silica sand employs a plurality of plasma furnaces to perform a sequence of chemical reactions together with other process steps to produce solar grade silicon. The plasma furnace generates a stable dirty air, donut-shaped plasma into which particulate matter can be introduced. The plasma in the first two stages is formed by gases from the chemical reactions and in the third from inert gasses. Cyclone separators are used to extract particulates from the plasma in an inert gas that prevents reverse reactions as the particular cools.

A silicon-based molten composition according to an exemplary embodiment is used for a solution growth method for forming a silicon carbide single crystal, and represented by Formula 1 including silicon (Si), a first metal M1, a second metal M2 and a third metal M3, wherein the first metal M1 is one or more selected from the group consisting of nickel (Ni) and manganese (Mn), the second metal M2 is one or more selected from the group consisting of scandium (Sc) and titanium (Ti), and the third metal M3 is one or more selected from the group consisting of aluminum (Al) and gallium (Ga):
Si.sub.aM1.sub.bM2.sub.cM3.sub.d  Formula 1 wherein a is 0.3 to 0.8, b is 0.1 to 0.5, c is 0.01 to 0.3, d is 0.01 to 0.2, and a+b+c+d is 1.

A silicon-based molten composition according to an exemplary embodiment is used for a solution growth method for forming a silicon carbide single crystal, and represented by Formula 1 including silicon (Si), a first metal M1, a second metal M2 and a third metal M3, wherein the first metal M1 is one or more selected from the group consisting of nickel (Ni) and manganese (Mn), the second metal M2 is one or more selected from the group consisting of scandium (Sc) and titanium (Ti), and the third metal M3 is one or more selected from the group consisting of aluminum (Al) and gallium (Ga):
Si.sub.aM1.sub.bM2.sub.cM3.sub.d  Formula 1 wherein a is 0.3 to 0.8, b is 0.1 to 0.5, c is 0.01 to 0.3, d is 0.01 to 0.2, and a+b+c+d is 1.

Provided herein are nanofibers and processes of preparing carbonaceous nanofibers. In some embodiments, the nanofibers are high quality, high performance nanofibers, highly coherent nanofibers, highly continuous nanofibers, or the like. In some embodiments, the nanofibers have increased coherence, increased length, few voids and/or defects, and/or other advantageous characteristics. In some instances, the nanofibers are produced by electrospinning a fluid stock having a high loading of nanofiber precursor in the fluid stock. In some instances, the fluid stock comprises well mixed and/or uniformly distributed precursor in the fluid stock. In some instances, the fluid stock is converted into a nanofiber comprising few voids, few defects, long or tunable length, and the like.

A silicon carbide powder which, when used as a raw material in a sublimation recrystallization method, enables improvement in productivity of a silicon carbide single crystal by exhibiting a high sublimation rate and allowing a small amount of silicon carbide to remain without being sublimated, and enables an increase in size of the silicon carbide single crystal (for example, a single crystal wafer). The silicon carbide powder has a Blaine specific surface area of from 250 cm.sup.2/g to 1,000 cm.sup.2/g and a ratio of a silicon carbide powder having a particle size of more than 0.70 mm and 3.00 mm or less of 50 vol % or more with respect to a total amount of the silicon carbide powder. When a silicon carbide powder accommodated in a crucible is heated to be sublimated, a silicon carbide single crystal is formed on a seed crystal provided on an undersurface of a lid.

A silicon carbide powder which, when used as a raw material in a sublimation recrystallization method, enables improvement in productivity of a silicon carbide single crystal by exhibiting a high sublimation rate and allowing a small amount of silicon carbide to remain without being sublimated, and enables an increase in size of the silicon carbide single crystal (for example, a single crystal wafer). The silicon carbide powder has a Blaine specific surface area of from 250 cm.sup.2/g to 1,000 cm.sup.2/g and a ratio of a silicon carbide powder having a particle size of more than 0.70 mm and 3.00 mm or less of 50 vol % or more with respect to a total amount of the silicon carbide powder. When a silicon carbide powder accommodated in a crucible is heated to be sublimated, a silicon carbide single crystal is formed on a seed crystal provided on an undersurface of a lid.

A method of fabricating a fiber structure, the method including a) forming at least one essentially amorphous ceramic fiber by applying heat treatment at a temperature lying in the range 900° C. to 1200° C. to at least one fiber that is a precursor of ceramic fiber; and b) performing one or more textile operations using at least one essentially amorphous ceramic fiber formed by performing step a) in order to form a fiber structure including the at least one essentially amorphous ceramic fiber.

A transaction card is provided comprising a card body comprising a metallic material, the card body including a primary surface, a secondary surface, an aperture and a slit, wherein the primary surface and the secondary surface are coated with a diamond like carbon (DLC) coating.

The present disclosure provides a manufacturing method of semi-insulating single-crystal silicon carbide powder comprising: providing a semi-insulating single-crystal silicon carbide bulk, wherein the semi-insulating single-crystal silicon carbide bulk has a first silicon-vacancy concentration, and the first silicon-vacancy concentration is greater than 5E11 cm{circumflex over ( )}−3; refining the semi-insulating single-crystal silicon carbide bulk to obtain a semi-insulating single-crystal silicon carbide coarse particle, wherein the semi-insulating single-crystal silicon carbide coarse particle has a second silicon-vacancy concentration and a first particle diameter, the second silicon-vacancy concentration is greater than 5E11 cm{circumflex over ( )}−3, and the first particle diameter is between 50 μm and 350 μm; self-impacting the semi-insulating single-crystal silicon carbide coarse particle to obtain a semi-insulating single-crystal silicon carbide powder, wherein the semi-insulating single-crystal silicon carbide powder has a third silicon-vacancy concentration and a second particle diameter, the third silicon-vacancy concentration is greater than 5E11 cm{circumflex over ( )}−3, and the second particle diameter is between 1 μm and 50 μm.