The present disclosure provides a manufacturing method of semi-insulating single-crystal silicon carbide powder comprising: providing a semi-insulating single-crystal silicon carbide bulk, wherein the semi-insulating single-crystal silicon carbide bulk has a first silicon-vacancy concentration, and the first silicon-vacancy concentration is greater than 5E11 cm{circumflex over ( )}−3; refining the semi-insulating single-crystal silicon carbide bulk to obtain a semi-insulating single-crystal silicon carbide coarse particle, wherein the semi-insulating single-crystal silicon carbide coarse particle has a second silicon-vacancy concentration and a first particle diameter, the second silicon-vacancy concentration is greater than 5E11 cm{circumflex over ( )}−3, and the first particle diameter is between 50 μm and 350 μm; self-impacting the semi-insulating single-crystal silicon carbide coarse particle to obtain a semi-insulating single-crystal silicon carbide powder, wherein the semi-insulating single-crystal silicon carbide powder has a third silicon-vacancy concentration and a second particle diameter, the third silicon-vacancy concentration is greater than 5E11 cm{circumflex over ( )}−3, and the second particle diameter is between 1 μm and 50 μm.

A powder boronizing composition comprising: a. 0.5 to 4.5 wt % of a boron source selected from B.sub.4C, amorphous boron, calcium hexaboride, borax or mixtures thereof; b. 45.5 to 88.5 wt % of a diluent selected from SiC, alumina or mixtures thereof; c. 1.0 to 20.0 wt % of an activator selected from KBF.sub.4, ammonia chloride, cryolite or mixtures thereof; and d. 10.0 to 30.0 wt % of a sintering reduction agent selected from carbon black, graphite or mixtures thereof.

A powder boronizing composition comprising: a. 0.5 to 4.5 wt % of a boron source selected from B.sub.4C, amorphous boron, calcium hexaboride, borax or mixtures thereof; b. 45.5 to 88.5 wt % of a diluent selected from SiC, alumina or mixtures thereof; c. 1.0 to 20.0 wt % of an activator selected from KBF.sub.4, ammonia chloride, cryolite or mixtures thereof; and d. 10.0 to 30.0 wt % of a sintering reduction agent selected from carbon black, graphite or mixtures thereof.

The present invention relates to a semiconductor heat treatment member for holding a semiconductor wafer, including a base member a surface of which is covered with an oxide film, the base member including a silicon carbide, in which a surface of a wafer holding portion to be in contact with a semiconductor wafer has an arithmetic average roughness Ra of smaller than or equal to 0.3 μm and an element average length RSm of shorter than or equal to 40 μm.

The present invention relates to a semiconductor heat treatment member for holding a semiconductor wafer, including a base member a surface of which is covered with an oxide film, the base member including a silicon carbide, in which a surface of a wafer holding portion to be in contact with a semiconductor wafer has an arithmetic average roughness Ra of smaller than or equal to 0.3 μm and an element average length RSm of shorter than or equal to 40 μm.

A mixed member of SiC and Si, the mixed member being formable without using a resin as a medium irrespective of its shape. To achieve the object, a feature of the mixed member of SiC and Si (SiC/Si mixed member) lies in that a SiC member (filler) in a chip form or powdery form is dispersed in a Si member (base material) having a polycrystalline structure. Further, the SiC/Si mixed member with such a feature can be configured such that a SiC coating layer is formed on a surface of the SiC/Si mixed member.

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.

The present invention provides a method of manufacturing a graphene nanosphere through a single process that is simplified in order to enable mass production. The method includes step 1 of manufacturing a silicon carbide nanosphere coated with graphene through chemical vapor deposition (CVD) using a gas containing a silicon source and a carbon source and step 2 of discontinuing the chemical vapor deposition (CVD) and then performing cooling.

There are provided a filler capable of increasing the thermal conductivity of a molded body of a resin composition obtained by being blended in resins, such as plastics, curable resins, or rubbers, and a molded body and a heat dissipating material having high thermal conductivity. A resin composition containing a filler and a resin is molded to give a molded body, and a heat dissipating material is obtained from the molded body. The filler contains secondary particles which are sintered bodies of powder containing primary particles of ceramic. The filler has a specific surface area measured by the BET method of 0.25 m.sup.2/g or less and granule strength measured by a microcompression test of 45 MPa or more.