There are provided a filler capable of increasing the thermal conductivity of a molded body of a resin composition obtained by being blended in resins, such as plastics, curable resins, or rubbers, and a molded body and a heat dissipating material having high thermal conductivity. A resin composition containing a filler and a resin is molded to give a molded body, and a heat dissipating material is obtained from the molded body. The filler contains secondary particles which are sintered bodies of powder containing primary particles of ceramic. The filler has a specific surface area measured by the BET method of 0.25 m.sup.2/g or less and granule strength measured by a microcompression test of 45 MPa or more.

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.

A silicon carbide ingot manufacturing method and a silicon carbide ingot manufacturing system are provided. The silicon carbide ingot manufacturing method and the silicon carbide ingot manufacturing system may change a temperature gradient depending on the growth of an ingot by implementing a guide which has a tilted angle to an external direction from the interior of a reactor, in an operation to grow an ingot during a silicon carbide ingot manufacturing process.

According to the present invention, there is provided a SiC epitaxial wafer including: a 4H-SiC single crystal substrate which has a surface with an off angle with respect to a c-plane as a main surface and a bevel part on a peripheral part; and a SiC epitaxial layer having a film thickness of 20 μm or more, which is formed on the 4H-SiC single crystal substrate, in which a density of an interface dislocation extending from an outer peripheral edge of the SiC epitaxial layer is 10 lines/cm or less.

According to the present invention, there is provided a SiC epitaxial wafer including: a 4H-SiC single crystal substrate which has a surface with an off angle with respect to a c-plane as a main surface and a bevel part on a peripheral part; and a SiC epitaxial layer having a film thickness of 20 μm or more, which is formed on the 4H-SiC single crystal substrate, in which a density of an interface dislocation extending from an outer peripheral edge of the SiC epitaxial layer is 10 lines/cm or less.

A ceramic aerogel includes a porous framework including interconnected double-paned wall structures of a ceramic material, wherein each double-paned wall structure includes a pair of walls spaced apart by a gap.

The present disclosure relates to a method for producing a carbon-silicon composite material powder, comprising: providing a carbon-containing precursor, which is lignin; providing at least one silicon-containing active material; melt-mixing at least said carbon-containing precursor and said silicon-containing active material(s) to a melt-mixture; providing said melt-mixture in a non-fibrous form and cooling the melt- mixture to provide an isotropic intermediate composite material; subjecting said isotropic intermediate composite material to a thermal treatment, wherein said thermal treatment comprises a carbonization step to provide a carbon-silicon composite material, and subjecting said carbon-silicon composite material to pulverization to provide said carbon-silicon composite material powder. The present disclosure also relates to a carbon-silicon composite material powder obtainable by the method, a negative electrode for a non-aqueous secondary battery, such as a lithium-ion battery, comprising the carbon-silicon composite material powder, and use of the carbon-silicon composite material powder in a negative electrode of a non-aqueous secondary battery.

A method of making molecularly doped nanodiamond. A versatile method for doping diamond by adding dopants into a carbon precursor and producing diamond at high pressure, high temperature conditions. Molecularly doped nanodiamonds that have direct incorporation of dopants and therefore without the need for ion implantation. Molecularly-doped diamonds that have fewer lattice defects than those made with ion implantation.

Three-dimensional nanoporous aerogels and suitable preparation methods are provided. Nanoporous aerogels may include a carbide material such as a silicon carbide, a metal carbide, or a metalloid carbide. Elemental (e.g., metallic or metalloid) aerogels may also be produced. In some embodiments, a cross-linked aerogel having a conformal coating on a sol-gel material is processed to form a carbide aerogel, metal aerogel, or metalloid aerogel. A three-dimensional nanoporous network may include a free radical initiator that reacts with a cross-linking agent to form the cross-linked aerogel. The cross-linked aerogel may be chemically aromatized and chemically carbonized to form a carbon-coated aerogel. The carbon-coated aerogel may be suitably processed to undergo a carbothermal reduction, yielding an aerogel where oxygen is chemically extracted. Residual carbon remaining on the surface of the aerogel may be removed via an appropriate cleaning treatment.