The invention provides a reactor for the manufacture of silicon by chemical vapor deposition (CVD), the reactor comprises a reactor body that can rotate around an axis with the help of a rotation device operatively arranged to the reactor, at least one sidewall that surrounds the reactor body, at least one inlet for reaction gas, at least one outlet for residual gas and at least one heat appliance operatively arranged to the reactor. The reactor is characterized in that during operation for the manufacture of silicon by CVD, the reactor comprises a layer of particles on the inside of at least, one sidewall.

A system for the production of a polycrystalline silicon product is disclosed. The system includes a reaction chamber, a susceptor, an induction unit, and a plurality of energy sources. The reaction chamber has a reactor wall, and the susceptor encircles the reactor wall. The induction heater surrounds the susceptor, and has multiple induction coils for producing heat in the susceptor. The coils are grouped into a plurality of zones. The plurality of energy sources supply electric current to the coils. Each energy source is connected with the coils of at least one zone.

A system for the production of a polycrystalline silicon product is disclosed. The system includes a reaction chamber, a susceptor, an induction unit, and a plurality of energy sources. The reaction chamber has a reactor wall, and the susceptor encircles the reactor wall. The induction heater surrounds the susceptor, and has multiple induction coils for producing heat in the susceptor. The coils are grouped into a plurality of zones. The plurality of energy sources supply electric current to the coils. Each energy source is connected with the coils of at least one zone.

Polycrystalline silicon with low contamination by impurities, especially boron and phosphorus, is manufactured by the Siemens process or by the fluidized bed process, in which deposition of polycrystalline silicon takes place in a reactor maintained within a clean room of the 1 to 100,000 class, and air entering the facility enclosing the reactors is filtered by a multiple stage filtration system wherein coarse and fine filter elements contain less than 0.1% by weight of boron and phosphorus and less than 0.01% by weight of arsenic and aluminum. Following production of the polycrystalline silicon, the polycrystalline silicon may be further treated by steps such as comminution, classifying, wet-chemical treatment, and packing, all these further steps also preferably taking place within a clean room of the 1 to 100,000 class.

Polycrystalline silicon with low contamination by impurities, especially boron and phosphorus, is manufactured by the Siemens process or by the fluidized bed process, in which deposition of polycrystalline silicon takes place in a reactor maintained within a clean room of the 1 to 100,000 class, and air entering the facility enclosing the reactors is filtered by a multiple stage filtration system wherein coarse and fine filter elements contain less than 0.1% by weight of boron and phosphorus and less than 0.01% by weight of arsenic and aluminum. Following production of the polycrystalline silicon, the polycrystalline silicon may be further treated by steps such as comminution, classifying, wet-chemical treatment, and packing, all these further steps also preferably taking place within a clean room of the 1 to 100,000 class.

The present invention relates to a fluidized bed reactor, comprising a reaction tube, a distributor and a heating device, the reaction tube and the distributor at the bottom of the reaction tube composing a closed space, the distributor comprising a gas inlet and a product outlet, and the reaction tube comprising a tail gas outlet and a seed inlet at the top or upper part respectively, characterized in that the reaction tube comprises a reaction inner tube and a reaction outer tube, and the heating device is an induction heating device placed within a hollow cavity formed between the external wall of the reaction inner tube and the internal wall of the reaction outer tube, wherein the hollow cavity is filled with hydrogen, nitrogen or inert gas for protection, and is able to maintain a pressure of about 0.01 to about 5 MPa; and also to a process of producing high purity granular polysilicon using the reactor. The fluidized bed reactor according to the present invention uses induction heating to heat directly the silicon particles inside the reaction chamber, such that the temperature of the reaction tube is lower than that inside the reaction chamber, which accordingly avoids deposition on the tube wall and results in more uniform heating, and thus is useful for large diameter fluidized bed reactors with much increased output for a single reactor.

Assembly of a fluidized bed reactor for the preparation of polycrystalline silicon granules by chemical vapor deposition of silicon onto seed particles and removal of polycrystalline silicon granules is facilitated without breakage and with gas tightness by a specific assembly sequence.

A process for preparing granular polysilicon using a fluidized bed reactor is disclosed. The upper and lower spaces of the bed are defined as a reaction zone and a heating zone, respectively, with the height of the reaction gas outlet being selected as the reference height. The invention maximizes the reactor productivity by sufficiently providing the heat required and stably maintaining the reaction temperature in the reaction zone, without impairing the mechanical stability of the fluidized bed reactor. This is achieved through electrical resistance heating in the heating zone where an internal heater is installed in a space in between the reaction gas supplying means and the inner wall of the reactor tube, thereby heating the fluidizing gas and the silicon particles in the heating zone. The heat generated in the heating zone is transferred to the reaction zone by supplying the fluidizing gas at such a rate that the silicon particles can be intermixed between the reaction zone and the heating zone in a continuous, fluidized state.

A process for preparing granular polysilicon using a fluidized bed reactor is disclosed. The upper and lower spaces of the bed are defined as a reaction zone and a heating zone, respectively, with the height of the reaction gas outlet being selected as the reference height. The invention maximizes the reactor productivity by sufficiently providing the heat required and stably maintaining the reaction temperature in the reaction zone, without impairing the mechanical stability of the fluidized bed reactor. This is achieved through electrical resistance heating in the heating zone where an internal heater is installed in a space in between the reaction gas supplying means and the inner wall of the reactor tube, thereby heating the fluidizing gas and the silicon particles in the heating zone. The heat generated in the heating zone is transferred to the reaction zone by supplying the fluidizing gas at such a rate that the silicon particles can be intermixed between the reaction zone and the heating zone in a continuous, fluidized state.

There are disclosed energetic nanoparticle compositions and materials containing silicon and other energetic elements, and methods of manufacturing the same, including reacting silicon nanoparticles and unsaturated alkene or alkyne to form covalently bonded surface coatings passivated against surface oxidation, for combination with a fuel, explosive or oxidizer.