A method of making an organoaminosilane compound, comprising i) combining A) a compound comprising a primary or secondary amine, B) monosilane (SiH.sub.4), and C) a catalyst, where the catalyst comprises magnesium or boron, where A), B) and C) are combined under sufficient conditions to form the organoaminosilane compound and hydrogen. A method of making a silylamine, the method comprising: i) forming an organoaminosilane compound by i) combining A) a compound comprising a primary or secondary amine, B) monosilane (SiH.sub.4), and C) a catalyst, where the catalyst comprises magnesium or boron, and ii) combining ammonia and the organoaminosilane compound produced in i) under sufficient conditions to form a silylamine product and a byproduct, where the byproduct is a primary or secondary amine.

The present invention provides processes for preparing silanylamines, such as disilanylamines and polysilanylamines, and compositions comprising the silanylamines. In one embodiment, the present invention provides processes for preparing a silanylamine compound, the processes comprising reacting a starting compound of general formula RR.sup.1N(Si.sub.xH.sub.2x+1) with an amine compound of general formula R.sup.2R.sup.3NH to produce the silanylamine compound of general formula R.sup.2.sub.mR.sup.3.sub.nN(Si.sub.xH.sub.2+1).sub.3-m-n.

Provided are a composition for depositing a silicon-containing thin film containing a trisilylamine compound and a method for producing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film containing a trisilylamine compound which is capable of forming a silicon-containing thin film at a very high deposition rate at a low temperature to be usable as a precursor of a silicon-containing thin film and an encapsulant of a display, and a method for producing a silicon-containing thin film by using the same.

Provided are a composition for depositing a silicon-containing thin film containing a trisilylamine compound and a method for producing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film containing a trisilylamine compound which is capable of forming a silicon-containing thin film at a very high deposition rate at a low temperature to be usable as a precursor of a silicon-containing thin film and an encapsulant of a display, and a method for producing a silicon-containing thin film by using the same.

To provide (i) a new internal member capable of accelerating reaction between a gas and a solid, (ii) a fluidized-bed reactor in which such an internal member is placed, and (iii) a method for producing trichlorosilane with use of such a fluidized-bed reactor, an internal member in accordance with an embodiment of the present invention is an internal member for use in a fluidized-bed reactor, the internal member including at least one resistive element having an upper surface having a conical or pyramid-shaped portion.

A polysilicon manufacturing apparatus according to an exemplary embodiment of the present invention includes: a reactor in which a reactive gas is introduced to perform a polysilicon manufacturing process by a chemical vapor deposition (CVD) method; and a slit-type nozzle installed at the reactor and spraying a gas inside the reactor to prevent absorption of silicon particles during a process.

A submicron sized Si based powder having an average primary particle size between 20 nm and 200 nm, wherein the powder has a surface layer comprising SiO.sub.x, with 0<x<2, the surface layer having an average thickness between 0.5 nm and 10 nm, and wherein the powder has a total oxygen content equal or less than 3% by weight at room temperature. The method for making the powder comprises a step where a Si precursor is vaporized in a gas stream at high temperature, after which the gas stream is quenched to obtain Si particles, and the Si particles are quenched at low temperature in an oxygen containing gas.

A submicron sized Si based powder having an average primary particle size between 20 nm and 200 nm, wherein the powder has a surface layer comprising SiO.sub.x, with 0<x<2, the surface layer having an average thickness between 0.5 nm and 10 nm, and wherein the powder has a total oxygen content equal or less than 3% by weight at room temperature. The method for making the powder comprises a step where a Si precursor is vaporized in a gas stream at high temperature, after which the gas stream is quenched to obtain Si particles, and the Si particles are quenched at low temperature in an oxygen containing gas.

A composition, comprising: trisilylamine and less than 5 ppmw of halogen. A method of making a silylamine comprising combining ammonia and a compound comprising aminosilane functionality, where the compound comprising aminosilane functionality is according to formula (I) R.sup.1 N(R.sup.2)a(SiH.sub.3).sub.2a (I), where R.sup.1 is an organic polymer, a C-.sub.1-20 hydrocarbyl group or SiR.sup.3.sub.3.sup.1, where R.sup.3 is C.sub.1-6 hydrocarbyl, R.sup.2 is a C-.sub.1-20 hydrocarbyl group, H, or -SiR.sup.3.sub.3.sup.1 , where R.sup.3 is as defined above, subscript a is 0 or 1, provided that R.sup.1 and R.sup.2 may be the same or different except if R.sup.1 is phenyl, R.sup.2 is not phenyl, under sufficient conditions to cause a reaction to form a silylamine and a byproduct.

A composition, comprising: trisilylamine and less than 5 ppmw of halogen. A method of making a silylamine comprising combining ammonia and a compound comprising aminosilane functionality, where the compound comprising aminosilane functionality is according to formula (I) R.sup.1 N(R.sup.2)a(SiH.sub.3).sub.2a (I), where R.sup.1 is an organic polymer, a C-.sub.1-20 hydrocarbyl group or SiR.sup.3.sub.3.sup.1, where R.sup.3 is C.sub.1-6 hydrocarbyl, R.sup.2 is a C-.sub.1-20 hydrocarbyl group, H, or -SiR.sup.3.sub.3.sup.1 , where R.sup.3 is as defined above, subscript a is 0 or 1, provided that R.sup.1 and R.sup.2 may be the same or different except if R.sup.1 is phenyl, R.sup.2 is not phenyl, under sufficient conditions to cause a reaction to form a silylamine and a byproduct.