The invention relates to a process for converting silicon tetrachloride (STC) to trichlorosilane (TCS), by introducing reactant gas containing STC and hydrogen into a reaction zone of a reactor in which the temperature is 1000-1600° C., wherein the reaction zone is heated by a heater located outside the reaction zone and the product gas containing TCS which forms is then cooled, with the proviso that it is cooled to a temperature of 700-900° C. within 0.1-35 ms, wherein the reactant gas is heated by the product gas by means of a heat exchanger working in countercurrent, wherein reactor and heat exchanger form a single, gas-tight component, wherein the component includes one or more ceramic materials selected from the group consisting of silicon carbide, silicon nitride, graphite, SiC-coated graphite and quartz glass.

A process for preparing a reaction product including a halosilane includes: contacting an unsaturated hydrocarbyl halide and a ternary intermetallic compound at a temperature of 300° C. to 700° C. to form the reaction product. The ternary intermetallic compound includes copper, silicon and a transition metal. The halosilane in the reaction product has formula R1.sub.mR.sup.2.sub.n—H.sub.oSiX.sub.(4-m-n-o)> where each R.sup.1 is independently a saturated monovalent hydrocarbyl group, each R.sup.2 is independently an unsaturated monovalent hydrocarbyl group; each X is independently a halogen atom; subscript m is 1, 2, or 3; subscript n is 0, 1, or 2; subscript o is 0, 1, or 2; and a quantity (m+n+o) is 1, 2, or 3. At least a portion of the unsaturated hydrocarbyl groups in the unsaturated by drocarbyl halide are converted to saturated hydrocarbyl groups (R.sup.1) in the halosilane.

Methods and apparatus to generate carbon nanostructures from organic materials are described. Certain embodiments provide solid waste materials into a furnace, that pyrolyzes the solid waste materials into gaseous decomposition products, which are then converted to carbon nanostructures. Methods and apparatuses described herein provide numerous advantages over conventional methods, such as cost savings, reduction of handling risks, optimization of process conditions, and the like.

The present disclosure relates to a process for producing chlorosilanes in a fluidized bed reactor by reacting a hydrogen chloride-containing reaction gas with a particulate contact mass containing silicon and optionally a catalyst. The chlorosilanes have the general formula H.sub.nSiCl.sub.4-n and/or H.sub.mCl.sub.6-mSi.sub.2. The reactor design is described by an index K1, the constitution of the contact mass without catalyst is described by an index K2.sub.uncat, the constitution of the contact mass with catalyst is described by an index K2.sub.cat, and the reaction conditions are described by an index K3.

The present disclosure includes a composition for forming a silicon-containing film on a substrate, comprising: a silicon precursor and a nitrogen precursor. The silicon-containing film is an elemental silicon film, a silicon carbon film, a silicon nitrogen film, or a silicon oxygen film. The substrate is a semiconductor material. The silicon precursor comprises trichlorodisilane. The trichlorodisilane is 1,1,1-trichlorodisilane.

A process for for producing or preparing chlorosilanes. The process includes providing chlorosilanes having the general formula H.sub.nSiCl.sub.4-n wherein n is from 1 to 3. Once provided, the chlorosilanes are placed into a fluidized bed reactor where a hydrogen and silicon tetrachloride-containing reaction gas is reacted with a particulate contact mass containing silicon at temperatures of 350° C. to 800° C. The operating granulation is understood as meaning the granulation or granulation mixture introduced into the fluidized bed reactor contains at least 1% by mass of silicon-containing particles S described by a structural parameter S. Where the S has a value of at least 0 and is calculated as follows S=(φ.sub.S−0.70).Math.ρ.sub.SD/ρ.sub.F where φ.sub.S is a symmetry-weighted sphericity factor; the ρ.sub.SD is a poured density [g/cm.sup.3], and the ρ.sub.F is an average particle solids density [g/cm.sup.3].

Erosion, caused by deposition of aluminum chloride, of the inner surface of a side wall of a pipe is reduced. A trichlorosilane production method includes a distillation step (S3) in which a discharge liquid (10) discharged from a distillation column (4) is caused to flow through an inner space (19) of a second pipe (100) having a side wall (12) of which the inner surface (15) is covered with a ceramic layer (13), so that the discharge liquid (10) is recovered from the distillation column (4).

The present disclosure relates to a process for producing chlorosilanes by reaction of a reaction gas containing hydrogen, tetrachlorosilane and optionally at least one further chlorosilane in a reactor and optionally in the presence of a catalyst. The chlorosilanes have the general formula H.sub.nSiCl.sub.4-n, and the reactor design is described by an index K1, the composition of the reaction gas before entry into the reactor is described by an index K2, and the reaction conditions are described by an index K3.

A polymer handling method for a polycrystalline silicon manufacturing device, wherein the polymer byproducts are treated in a manner that the silicon polymers are hydrolyzed. The method creates a heated treatment gas with a moisture content that both treats the polymer to a depth of about 0.25 mm to prohibit formation of the friction and shock sensitive layer near the polymer surface and keeps the hydrolyzed polymer humidified. Furthermore the polymer handling method includes inactivation of the polymer, removal of the polymer of the system and disposal of the polymer after removal.

The present disclosure relates to a process for producing chlorosilanes in a fluidized bed reactor by reaction of a hydrogen and silicon tetrachloride-containing reaction gas with a particulate contact mass containing silicon and a catalyst. The chlorosilanes have the general formula H.sub.nSiCl.sub.4−n and/or H.sub.mCl.sub.6−mSi.sub.2. The reactor design is described by an index K1, the constitution of the contact mass is described by an index K2 and the reaction conditions are described by an index K3.