Disclosed is a Silicon Precursor Compound for deposition, the Silicon Precursor Compound comprising trichlorodisilane; a composition for film forming, the composition comprising the Silicon Precursor Compound and at least one of an inert gas, molecular hydrogen, a carbon precursor, nitrogen precursor, and oxygen precursor; a method of forming a silicon-containing film on a substrate using the Silicon Precursor Compound, and the silicon-containing film formed thereby.

A susceptor arrangement for a reactor includes a heater element configured to heat a process gas to be used in the reactor. Also included is an inner susceptor portion located radially inwardly of the heater element and configured to route the process gas therein along a radially inner process gas path. Further included is an outer susceptor portion located radially outwardly of the heater element and configured to route the process gas therein along a radially outer process gas path, wherein the radially inner process gas path and the radially outer process gas path are fluidly coupled and substantially fluidly isolated from the heater element.

A method and system for selectively recovering monochlorosilane and dichlorosilane from polysilicon production process are provided. The system and method selectively recover the monochlorosilane and the dichlorosilane contained in an exhaust stream discharged from a chemical vapor deposition unit for a polysilicon production process and the monochlorosilanes and the dichlorosilanes may be obtained with minimal capital investment or complexity.

The present invention relates to an apparatus for producing trichlorosilane from tetrachlorosilane in an efficient manner. The apparatus includes an inlet through which reaction raw materials including a metal silicon powder dispersed in liquid tetrachlorosilane enter, a hole through which a gaseous reaction raw material is fed, an outlet through which reaction products including trichlorosilane exit, a tubular reactor in which the reaction raw materials entering through the inlet react with each other during flow, and means for impeding the flow of the fluids to cause collision of the fluids during flow.

A susceptor arrangement for a reactor includes a heater element configured to heat a process gas to be used in the reactor. Also included is an inner susceptor portion located radially inwardly of the heater element and configured to route the process gas therein along a radially inner process gas path. Further included is an outer susceptor portion located radially outwardly of the heater element and configured to route the process gas therein along a radially outer process gas path, wherein the radially inner process gas path and the radially outer process gas path are fluidly coupled and substantially fluidly isolated from the heater element.

Methods for separating halosilanes that involve use of a distillation column having a partition that divides the column into portions for producing three product fractions are disclosed. Methods and systems for producing silane by disproportionation of halosilanes that use such columns and methods for producing polycrystalline silicon are also disclosed.

A method for preparing trichlorosilane according to an embodiment of the present invention comprises the steps of: supplying surface-modified metal silicide and metal grade silicon to a reaction unit; supplying silicon tetrachloride and hydrogen to the reaction unit; and supplying a product, which is generated by a reaction of metal grade silicon, silicon tetrachloride, and hydrogen in the presence of metal silicide in the reaction unit, to a separation unit, and separating a trichlorosilane component. In cases where a silicon tetrachloride hydrochlorination reaction is performed using the method for preparing trichlorosilane according to the embodiment of the present invention, the yield of trichlorosilane can be raised.

The systems and method of the invention involve hydrochlorination by providing feed streams with suitable reaction conditions through reactant stream conditioning systems and components. The conditioning systems facilitate vaporization of silicon tetrachloride in gaseous hydrogen to produce a reactant stream comprising hydrogen that is saturated with silicon tetrachloride. Saturation can be effected without the use of superheated steam or hot oil by utilizing saturated steam that is less than about 15 bar. The saturated reactant stream can be further heated to reaction conditions that effect conversion to trichlorosilane.

The invention relates to a process for removal of bromine, bromine- and/or iodine-containing silicon compounds from compositions of chlorosilanes containing bromine, bromine- and/or iodine-containing silicon compounds, wherein the composition is subjected to a nonthermal plasma and subsequently the chlorosilanes may be separated from the bromine- and/or iodine-containing compounds present by distillation.

A process for obtaining hexachlorodisilane and uses for the same. The process includes contacting at least one partially hydrogenated chlorodisilane of general formula H.sub.xSi.sub.2Cl.sub.(6-x) where x is from 1 to 5 in the liquid state with a solid non-functionalized adsorber material that is selected from the group comprising silicates, aluminosilicates, organic polymer and/or combinations thereof. The process also includes optionally separating the hexachlorodisilane and/or optionally separating the adsorber material.