A method for producing purified chlorosilanes includes bringing crude chlorosilanes, such as crude trichlorosilane and crude silicon tetrachloride, which contain a boron compound and/or a phosphorus compound, into contact with chlorine (preferably 1 ppm mole to 3000 ppm mole with respect to 1 mole of crude chlorosilanes) in presence of alkylphenol such as 2-methylphenol, and then distilling the crude chlorosilanes.

A method of making a trihalosilane comprising contacting an organotrihalosilane according to the formula RS1X3 (I), wherein R is C.sub.1-C.sub.10 hydrocarbyl and each X independently is halo, with hydrogen, wherein the mole ratio of the organotrihalosilane to hydrogen is from 0.009:1 to 1:2300, in the presence of a catalyst comprising a metal selected from (i) Re, (ii) a mixture comprising Re and at least one element selected from Pd, Ru, Mn, Cu, and Rh, (iii) a mixture comprising Ir and at least one element selected from Pd and Rh, (iv) Mn, (v) a mixture comprising Mn and Rh, (vi) Ag, (vii) Mg, and (viii) Rh at from 300 to 800 C. to form a trihalosilane.

First, at least one of silanol and a siloxane compound is generated in a chlorosilane (S101). In the step, for example, an inert gas having a moisture concentration of 0.5 to 2.5 ppm is brought into contact with the chlorosilane to dissolve the moisture, and at least one of silanol and a siloxane compound is generated through a hydration reaction of a moiety of the chlorosilane. Next, a boron-containing compound contained in the chlorosilane is reacted with the silanol or the siloxane compound, thereby converting the boron-containing compound to a boron oxide (S102). Through the step (S102), the boron-containing compound being a low boiling point compound is converted to a boron oxide being a high boiling point compound, and therefore the difference in boiling point from the boiling point of chlorosilane becomes larger to make later separation easy.

The present invention provides a technique which allows stable use of an ion-exchange resin for removing boron impurities over a long period of time in the purification step of a silane compound or a chlorosilane compound. In the present invention, a weakly basic ion-exchange resin used for the purification of a silane compound and a chlorosilane compound is cleaned with a gas containing hydrogen chloride. When this cleaning treatment is used for the initial activation of the weakly basic ion-exchange resin, a higher impurity-adsorbing capacity can be obtained. Further, use of the cleaning treatment for the regeneration of the weakly basic ion-exchange resin allows stable use of the ion-exchange resin for a long time. This allows reduction in the amount of the resin used in a long-term operation and reduction in the cost of used resin disposal.

The invention provides a process for endothermic gas phase reaction in a reactor, in which reactant gases are introduced into the reactor via a gas inlet apparatus and distributed homogeneously into a heating zone by means of a gas distribution apparatus, wherein the reactant gases are heated in the heating zone to a mean temperature of 500-1500 C. by means of heating elements and then conducted into a reaction zone, the reactant gases reacting in the reaction zone to give a product gas which is conducted out of the reactor via a gas outlet apparatus. Further subject matter of the invention relates to a process for endothermic gas phase reaction in a reactor, wherein the heating of the heating elements is controlled by temperature measurements in the reaction zone, at least two temperature sensors being present in the reaction zone for this purpose, and reactor for performance of the process.

Shell and tube heat exchangers that include a baffle arrangement that improves the temperature profile and flow pattern throughout the exchanger and/or that are integral with a reaction vessel are disclosed. Methods for using the exchangers including methods that involve use of the exchanger and a reaction vessel to produce a reaction product gas containing trichlorosilane are also disclosed.

The present invention relates to an apparatus for producing trichlorosilane from tetrachlorosilane in an efficient manner. The apparatus includes an inlet through which reaction raw materials including a metal silicon powder dispersed in liquid tetrachlorosilane enter, a hole through which a gaseous reaction raw material is fed, an outlet through which reaction products including trichlorosilane exit, a tubular reactor in which the reaction raw materials entering through the inlet react with each other during flow, and means for impeding the flow of the fluids to cause collision of the fluids during flow.

[Problem to be solved] Provided is a method that enables effective industrial use of an exhaust gas containing hydrogen to be discharged during production of trichlorosilane.

[Solution] Provided is a method for producing trichlorosilane, the method comprising: reacting metallic silicon and tetrachlorosilane with a mixed gas containing hydrogen to generate trichlorosilane. The mixed gas containing hydrogen contains 1 to 500 molar ppm of hydrogen chloride and 100 to 10,000 molar ppm of silane hydride, and the mixed gas is heated at 100 C. to 450 C. and then reacted.

Boron, phosphorus, arsenic, antimony and other impurities are at least partially removed from a mixture containing at least one chlorosilane and/or organochlorosilane by a) contacting the liquid mixture with a carrier material functionalized with an amidoxime of the general structural formula (I), ##STR00001##
where CAR=carrier material and R.sup.1, R.sup.2 are independently of one another H, alkyl, alkenyl, aryl, alkylaryl; and b) optionally removing the functionalized carrier material.

A process for for producing or preparing chlorosilanes. The process includes providing chlorosilanes having the general formula H.sub.nSiCl.sub.4-n wherein n is from 1 to 3. Once provided, the chlorosilanes are placed into a fluidized bed reactor where a hydrogen and silicon tetrachloride-containing reaction gas is reacted with a particulate contact mass containing silicon at temperatures of 350 C. to 800 C. The operating granulation is understood as meaning the granulation or granulation mixture introduced into the fluidized bed reactor contains at least 1% by mass of silicon-containing particles S described by a structural parameter S. Where the S has a value of at least 0 and is calculated as follows S=(.sub.s0.70).Math..sub.SD/.sub.F where .sub.S is a symmetry-weighted sphericity factor; the .sub.SD is a poured density [g/cm.sup.3], and the .sub.F is an average particle solids density [g/cm.sup.3].