A method is useful for preparing partially hydrogenated chlorosilanes by selective hydrogenation with a compound of the formula R.sub.2AlH, wherein R is a branched or cyclic hydrocarbon. Partially hydrogenated chlorosilanes can be prepared with said method, in particular partially hydrogenated chlorosilanes represented by the formula Cl.sub.3SiSi(SiH.sub.3).sub.3, (Cl.sub.3Si).sub.2Si(SiH.sub.3).sub.2 or HSi(SiH.sub.3).sub.2SiCl.sub.3.

A method of preparing pentachlorodisilane is disclosed. The method comprises partially reducing hexachlorodisilane with a metal hydride compound to give a reaction product comprising pentachlorodisilane. The method further comprises purifying the reaction product to give a purified reaction product comprising the pentachlorodisilane. The purified reaction product comprising pentachlorodisilane formed in accordance with the method is also disclosed.

A process for removal of impurities, in particular of dopants, from chlorosilanes which includes the following steps: (a) heating a deposition surface (3); (b) contacting the heated deposition surface (3) with at least one gaseous chlorosilane mixture, the gaseous chlorosilane mixture including at least one chlorosilane and at least one impurity, in particular at least one dopant; (c) at least partially removing the impurity, in particular the dopant, by forming polycrystalline silicon depositions on the deposition surface (3), the polycrystalline silicon depositions being enriched with the impurity, in particular with the dopant; (d) discharging the purified gaseous chlorosilane mixture; (e) contacting the heated deposition surface (3) with an etching gas to return the polycrystalline silicon depositions and the impurity, in particular the dopant, into the gas phase to form a gaseous etching gas mixture; and (f) discharging the gaseous etching gas mixture.

An object is to prevent corrosion and stress-corrosion cracking that would be caused by hydrochloric acid which would be formed at or near a filter element (80). A trichlorosilane production apparatus (1) includes: a reactor (2) configured to produce trichlorosilane; and a filter device (3) configured to remove a reaction residue, the filter device (3) including a filter element that is comprised of a corrosion-resistant material.

Separation of chlorosilane mixtures containing boron, arsenic, and/or phosphorus impurities is facilitated by a distillative separation using at least one divided column, with recycle streams to a first column being passed through an external absorbent for the impurities.

The invention relates to a method for increasing the purity of oligosilanes and/or oligosilane compounds, in which a first liquid substance mixture formed from at least 50% oligosilane compounds comprising inorganic oligosilanes and/or halogenated oligosilanes and/or organically substituted oligosilanes is provided, and the first liquid substance mixture is subjected to at least one purification sequence, wherein in a first step a) the liquid substance mixture is temperature adjusted to a temperature at which at least one fraction of the oligosilane compounds solidify, and in a second step b) at least one fraction of the liquid substance mixture is separated.

Aluminum chloride is separated from a silane mixture containing aluminum chloride by reacting the aluminum chloride with a compound reactive therewith which forms an ionic liquid or solid, and separating the ionic liquid or solid from the now-purified silane.

The invention relates to a method for purifying halogenated oligosilanes in the form of a pure compound or a mixture of compounds with respectively at least one direct SiSi bond, the substituents thereof being exclusively made from halogen or from halogen and hydrogen and in the composition thereof, the atomic ratio of the substituents:silicon is at least 3:2, by the action of at least one purification agent on the halogenated oligosilane and by isolating the halogenated oligosilanes with improved purity. According to prior art, halogenated monosilanes such as HSiCl.sub.3 are purified by treating with organic compounds, preferably polymers, containing amino groups, and are separated from said mixtures. Based on the contained amino groups, said method can not be used for halogenated oligosilanes as the secondary reactions lead to a decomposition of the products. The novel method is used to provide the desired products in a high yield and purity without using the amino groups.

A column includes a column head, a column sump and a tube-shaped column shell disposed therebetween, two or more reaction zones lying above each other which each accommodate a catalyst bed, in which catalyst beds chlorosilanes disproportionate into low-boiling silanes, which form an ascending stream of gas, and also into high-boiling silanes which form a downwardly directed stream of liquid, within the column shell and along the column axis, two or more rectificative separation zones, the reaction zones and the separation zones alternate along the column axis, the separation zones are configured such that the stream of gas and the stream of liquid meet in the separation zones, and the reaction zones are configured such that the downwardly directed stream of liquid is led through the catalyst beds, whereas the upwardly directed stream of gas passes the catalyst beds in spatial separation from the stream of liquid.

Separation of chlorosilane mixtures containing boron, arsenic, and/or phosphorus impurities is facilitated by a distillative separation using at least one divided column, with recycle streams to a first column being passed through an external absorbent for the impurities.