The present invention relates to a polymer electrolyte and a method for manufacturing same. More specifically, a polymer electrolyte with improved ion conductivity can be produced by adding boron nitride to a solid electrolyte comprising polysiloxane.

A hexagonal boron nitride powder whose maximum absorption peak within the range of 3,100 to 3,800 cm.sup.1 of the diffuse reflectance fourier transform infrared spectrum is existent at 3,530 to 3,590 cm.sup.1 and which is able to provide high heat conductivity, dielectric strength and copper foil peel strength to a resin composition obtained by filling the powder into a resin, and a process for producing the above boron nitride powder by mixing together an oxygen-containing boron compound, a carbon source having a sulfur concentration of 1,000 to 10,000 ppm and an oxygen-containing calcium compound in a specific ratio and reduction nitriding the mixture.

A new compound (NH.sub.4).sub.3H.sub.2[BOB(PO.sub.4).sub.3] was prepared and found to conduct protons under a variety of temperature conditions relevant to fuel cell operation. Also described is the related material Rb.sub.x(NH.sub.4).sub.3-xH.sub.2(BOB(PO.sub.4).sub.3) where 0>x3.

As disclosed herein, the viscoelastic performance of boron nitride nanotube (BNNT) materials may be enhanced and made into useful formats by utilizing purified BNNTs, aligned BNNTs, isotopically enhanced BNNTs, and density controlled BNNT material. Minimizing the amounts of boron particles, a-BN particles, and h-BN nanocages, and optimizing the h-BN nanosheets has the effect of maximizing the amount of BNNT surface area present that may interact with BNNTs themselves and thereby create the nanotube-to-nanotube friction that generates the viscoelastic behavior over temperatures from near absolute zero to near 1900 K. Aligning the BNNT molecular strands with each other within the BNNT material also generates enhanced friction surfaces. The transport of phonons along the BNNT molecules may be further enhanced by utilizing isotopically enhanced BNNTs.

Described herein are apparatus, systems, and methods for the continuous production of BNNT fibers, BNNT strands and BNNT initial yarns having few defects and good alignment. BNNTs may be formed by thermally exciting a boron feedstock in a chamber in the presence of pressurized nitrogen. BNNTs are encouraged to self-assemble into aligned BNNT fibers in a growth zone, and form BNNT strands and BNNT initial yarns, through various combinations of nitrogen gas flow direction and velocities, heat source distribution, temperature gradients, and chamber geometries.

A hexagonal BN powder including aggregates of primary particles of hexagonal BN containing boron and oxygen as impurity elements at a content of 1.00 to 30.00% and 0 to 1.00% by mass, respectively, which has a peak A in a predetermined particle diameter range and a 50% volume cumulative particle diameter D.sub.50 (d1) of 30.0 to 200.0 l in a particle size distribution curve, and in which a ratio of a height (a1) of the peak A before treatment to a height (a2) of the peak A after treatment is 0.80 to 1.00 and a ratio of D.sub.50 (d1) before treatment to D.sub.50 (d2) after treatment is 0.80 to 1.00 when the hexagonal BN powder is ultrasonically treated under a predetermined condition for 1 minute. Also disclosed is a method for producing the hexagonal BN powder, a composition and a heat dissipation material.

Described herein are apparatus, systems, and methods for the continuous production of BNNT fibers, BNNT strands and BNNT initial yarns having few defects and good alignment. BNNTs may be formed by thermally exciting a boron feedstock in a chamber in the presence of pressurized nitrogen. BNNTs are encouraged to self-assemble into aligned BNNT fibers in a growth zone, and form BNNT strands and BNNT initial yarns, through various combinations of nitrogen gas flow direction and velocities, heat source distribution, temperature gradients, and chamber geometries.

Substantially aligned boron nitride nano-element arrays prepared by contacting a carbon nano-element array with a source of boron and nitrogen; methods for preparing such arrays and methods for their use including use as a heat sink or as a thermally conductivity interface in microelectronic devices.

An amorphous boron nitride compound may include a boron nitride compound, where the boron nitride compound may be amorphous and may be doped with carbon or hydrogen. In the boron nitride compound, a total content of the carbon or the hydrogen may be in a range of about 0.1 at % to about 35 at % of a total atomic content.

To provide an electrolyte for a storage device capable of lowering the electric resistance and maintaining a high capacity even after charging and discharging are repeatedly carried out, and a storage device.

An electrolyte for a storage device, which comprises a lithium-containing complex compound represented by the following formula (1), (2), (3), (4) or (5):

(Li).sub.m(A).sub.n(UF.sub.x).sub.y(1)

(Li).sub.m(Si).sub.n(O).sub.q(UF.sub.x).sub.y(2)

wherein A is O, S, P or N; U is a boron atom or a phosphorus atom; m and n are each independently from 1 to 6; q is from 1 to 12; x is 3 or 5; and y is from 1 to 6;

(Li).sub.m(O).sub.n(B).sub.p(OWF.sub.q).sub.x(3)

wherein W is a boron atom or a phosphorus atom; m, p and x are each independently from 1 to 15; n is from 0 to 15; and q is 3 or 5;

(Li).sub.m(B).sub.p(O)n(OR).sub.y(OWF.sub.q).sub.x(4)

wherein W is a boron atom or a phosphorus atom; n is from 0 to 15; p, m, x and y are each independently from 1 to 12; q is 3 or 5; and R is hydrogen, an alkyl group, an alkenyl group, an aryl group, a carbonyl group, a sulfonyl group or a silyl group, and such a group may have a fluorine atom, an oxygen atom or other substituent;

(Li).sub.m(O).sub.n(B).sub.p(OOC-(A).sub.z-COO).sub.y(OWF.sub.q).sub.x(5)

wherein W is a boron atom or a phosphorus atom, A is a C.sub.1-6 allylene group, alkenylene group or alkynylene group, a phenylene group, or an alkylene group having an oxygen atom or a sulfur atom in its main chain; m, p, x and y are each independently from 1 to 20; n is from 0 to 15; z is 0 or 1; and q is 3 or 5.