Embodiments of the present disclosure generally relate to an apparatus and a method for cleaning a processing chamber. In one embodiment, a substrate support cover includes a bulk member coated with a fluoride coating. The substrate support cover is placed on a substrate support disposed in the processing chamber during a cleaning process. The fluoride coating does not react with the cleaning species. The substrate support cover protects the substrate support from reacting with the cleaning species, leading to reduced condensation formed on chamber components, which in turn leads to reduced contamination of the substrate in subsequent processes.

Embodiments of the present disclosure generally relate to an apparatus and a method for cleaning a processing chamber. In one embodiment, a substrate support cover includes a bulk member coated with a fluoride coating. The substrate support cover is placed on a substrate support disposed in the processing chamber during a cleaning process. The fluoride coating does not react with the cleaning species. The substrate support cover protects the substrate support from reacting with the cleaning species, leading to reduced condensation formed on chamber components, which in turn leads to reduced contamination of the substrate in subsequent processes.

Disclosed herein is a sintered yttrium oxide body having a total impurity level of 40 ppm or less, a density of not less than 4.93 g/cm3, wherein the sintered yttrium oxide body has at least one grain boundary comprising silica in an amount of not less than 1 to not greater than 10 atoms/nm2 wherein the sintered yttrium oxide body has at least one surface comprising at least one pore, wherein no pore is larger than 5 m in diameter. A process for making the sintered yttrium oxide body is also disclosed.

Disclosed herein is a sintered yttrium oxide body having a total impurity level of 40 ppm or less, a density of not less than 4.93 g/cm3, wherein the sintered yttrium oxide body has at least one grain boundary comprising silica in an amount of not less than 1 to not greater than 10 atoms/nm2 wherein the sintered yttrium oxide body has at least one surface comprising at least one pore, wherein no pore is larger than 5 m in diameter. A process for making the sintered yttrium oxide body is also disclosed.

The present application provides a method of fabricating a thin film transistor. The method includes selecting a nano-structure material having a monotonic relationship between a threshold voltage and a channel length when the nano-structure material is formed as a channel part in a thin film transistor; forming an active layer using the nano-structure material; determining a nominal channel length of a channel part of the thin film transistor based on the monotonic relationship and a reference threshold voltage so that the thin film transistor is formed to have a nominal threshold voltage; and forming a source electrode and a drain electrode thereby forming the channel part in the active layer having the nominal channel length.

The present application provides a method of fabricating a thin film transistor. The method includes selecting a nano-structure material having a monotonic relationship between a threshold voltage and a channel length when the nano-structure material is formed as a channel part in a thin film transistor; forming an active layer using the nano-structure material; determining a nominal channel length of a channel part of the thin film transistor based on the monotonic relationship and a reference threshold voltage so that the thin film transistor is formed to have a nominal threshold voltage; and forming a source electrode and a drain electrode thereby forming the channel part in the active layer having the nominal channel length.

Disclosed is provision of a ceramic coat having an excellent low-particle generation as well as a method for assessing the low-particle generation of the ceramic coat. A composite structure including a substrate and a structure which is formed on the substrate and has a surface, wherein the structure includes a polycrystalline ceramic and the composite structure has luminance Sa satisfying a specific value calculated from a TEM image analysis thereof, can be suitably used as an inner member of a semiconductor manufacturing apparatus required to have a low-particle generation.

A process for providing fluoresence to a dental ceramic body by treating at least a portion of the outer surface of the dental ceramic body or a precursor thereof with a bismuth containing substance, characterized by the steps of placing the dental ceramic body or the precursor thereof into a closeable container, in particular a crucible; generating a bismuth containing atmosphere in the container and exposing at least a portion of the outer surface of the dental ceramic body or of the precursor to the bismuth containing atmosphere at a temperature above 1000 C.

The invention relates to direct-structurable coating compositions comprising a metal oxide precursor, a photoacid generator, and a solvent. The present invention also relates to the use of such a coating composition to produce directly structured metal oxide layers, a method for producing metal oxide layers using such a coating composition, a metal oxide-containing layer produced according to such a method, and the use of such a metal oxide-containing layer to produce electronic components, in particular to produce transistors, diodes, sensors or solar cells.

The invention relates to direct-structurable coating compositions comprising a metal oxide precursor, a photoacid generator, and a solvent. The present invention also relates to the use of such a coating composition to produce directly structured metal oxide layers, a method for producing metal oxide layers using such a coating composition, a metal oxide-containing layer produced according to such a method, and the use of such a metal oxide-containing layer to produce electronic components, in particular to produce transistors, diodes, sensors or solar cells.