Patent classifications
C01F17/259
Sintered body, method of fabricating the same, semiconductor fabricating device, and method of fabricating semiconductor fabricating device
A sintered body, a method of fabricating the sintered body, a semiconductor fabricating device, and a method of fabricating the semiconductor fabricating device, the sintered body including 50 mass % or more of Y.sub.5O.sub.4F.sub.7, wherein the sintered body has a relative density of 97.0% or more and a Vickers hardness of 2.4 GPa or more.
Sintered body, method of fabricating the same, semiconductor fabricating device, and method of fabricating semiconductor fabricating device
A sintered body, a method of fabricating the sintered body, a semiconductor fabricating device, and a method of fabricating the semiconductor fabricating device, the sintered body including 50 mass % or more of Y.sub.5O.sub.4F.sub.7, wherein the sintered body has a relative density of 97.0% or more and a Vickers hardness of 2.4 GPa or more.
SINTERED BODY, METHOD OF FABRICATING THE SAME, SEMICONDUCTOR FABRICATING DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR FABRICATING DEVICE
A sintered body, a method of fabricating the sintered body, a semiconductor fabricating device, and a method of fabricating the semiconductor fabricating device, the sintered body including 50 mass % or more of Y.sub.5O.sub.4F.sub.7, wherein the sintered body has a relative density of 97.0% or more and a Vickers hardness of 2.4 GPa or more.
SINTERED BODY, METHOD OF FABRICATING THE SAME, SEMICONDUCTOR FABRICATING DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR FABRICATING DEVICE
A sintered body, a method of fabricating the sintered body, a semiconductor fabricating device, and a method of fabricating the semiconductor fabricating device, the sintered body including 50 mass % or more of Y.sub.5O.sub.4F.sub.7, wherein the sintered body has a relative density of 97.0% or more and a Vickers hardness of 2.4 GPa or more.