Combustion apparatuses (e.g., burners) and methods, such as those configured to encourage mixing of fluid, flame stability, and synthesis of materials (e.g., nano-particles), among other things.

Combustion apparatuses (e.g., burners) and methods, such as those configured to encourage mixing of fluid, flame stability, and synthesis of materials (e.g., nano-particles), among other things.

Method for producing a metal oxide powder in which a) a material stream I containing at least one vaporous hydrolysable metal compound, b) a material stream II containing oxygen and c) a material stream III containing at least one fuel gas are brought to reaction, wherein d) via a feed-in point provided in a pipe piece A, wherein the pipe piece A comprises one or more static mixer elements, the material stream I is introduced into the material stream II, or vice versa, and thereby generates the material stream IV, then e) via a feed-in point provided in a pipe piece B, wherein the pipe piece B comprises one or more static mixer elements, the material stream III is introduced into the material stream IV, and thereby generates the material stream V, f) the material stream V leaving the pipe piece B is introduced into a reaction chamber, ignited there and converted into a flame and g) the resultant solids are separated off.

Method for producing a metal oxide powder in which a) a material stream I containing at least one vaporous hydrolysable metal compound, b) a material stream II containing oxygen and c) a material stream III containing at least one fuel gas are brought to reaction, wherein d) via a feed-in point provided in a pipe piece A, wherein the pipe piece A comprises one or more static mixer elements, the material stream I is introduced into the material stream II, or vice versa, and thereby generates the material stream IV, then e) via a feed-in point provided in a pipe piece B, wherein the pipe piece B comprises one or more static mixer elements, the material stream III is introduced into the material stream IV, and thereby generates the material stream V, f) the material stream V leaving the pipe piece B is introduced into a reaction chamber, ignited there and converted into a flame and g) the resultant solids are separated off.

The invention relates to compositions which contain polyorganosiloxanes, a hydrosilylation catalyst, an inhibitor or moderator and doped pyrogenic titanium dioxide, to the use thereof for applying protective coatings to an electrical or electronic component or device and to the protective coatings as such.

The invention relates to compositions which contain polyorganosiloxanes, a hydrosilylation catalyst, an inhibitor or moderator and doped pyrogenic titanium dioxide, to the use thereof for applying protective coatings to an electrical or electronic component or device and to the protective coatings as such.

TiO.sub.2 based scrubbing granules, and methods of making and using such TiO.sub.2 based scrubbing granules are described. TiO.sub.2-based scrubbing granules include granulated TiO.sub.2 and about 0.5% to about 20% dry weight inorganic salt binder. Other TiO.sub.2 based scrubbing granules include unsintered granulated TiO.sub.2 and about 0.5% to about 20% dry weight inorganic salt binder. Inorganic salt binder include sodium aluminate. Methods of making TiO.sub.2 based scrubbing granules include i) combining TiO.sub.2 particles with inorganic salt binder to form TiO.sub.2-binder mixture comprising from about 0.5% to about 20% dry weight binder; ii) granulating the TiO.sub.2-binder mixture; and drying the granulated TiO.sub.2-binder mixture to form TiO.sub.2-based scrubbing granules. Methods of using such TiO.sub.2-based scrubbing granules include introducing TiO.sub.2-based scrubbing granules to remove adherent deposits on an inner surface of a reactor or heat exchanger during processes of forming TiO.sub.2 particles and finishing the formed TiO.sub.2 particles into finished pigment products.

TiO.sub.2 based scrubbing granules, and methods of making and using such TiO.sub.2 based scrubbing granules are described. TiO.sub.2-based scrubbing granules include granulated TiO.sub.2 and about 0.5% to about 20% dry weight inorganic salt binder. Other TiO.sub.2 based scrubbing granules include unsintered granulated TiO.sub.2 and about 0.5% to about 20% dry weight inorganic salt binder. Inorganic salt binder include sodium aluminate. Methods of making TiO.sub.2 based scrubbing granules include i) combining TiO.sub.2 particles with inorganic salt binder to form TiO.sub.2-binder mixture comprising from about 0.5% to about 20% dry weight binder; ii) granulating the TiO.sub.2-binder mixture; and drying the granulated TiO.sub.2-binder mixture to form TiO.sub.2-based scrubbing granules. Methods of using such TiO.sub.2-based scrubbing granules include introducing TiO.sub.2-based scrubbing granules to remove adherent deposits on an inner surface of a reactor or heat exchanger during processes of forming TiO.sub.2 particles and finishing the formed TiO.sub.2 particles into finished pigment products.

Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.

Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.