C01G23/07

TiO2 based scrubbing granules, and methods of making and using such TiO2 based scrubbing granules

TiO.sub.2 based scrubbing granules, and methods of making and using such TiO.sub.2 based scrubbing granules are described. TiO2-based scrubbing granules include granulated TiO.sub.2 and about 0.5% to about 20% dry weight inorganic salt binder. Other TiO.sub.2 based scrubbing granules include unsintered granulated TiO2 and about 0.5% to about 20% dry weight inorganic salt binder. Inorganic salt binder include sodium aluminate. Methods of making TiO.sub.2 based scrubbing granules include i) combining TiO.sub.2 particles with inorganic salt binder to form TiO.sub.2-binder mixture comprising from about 0.5% to about 20% dry weight binder; ii) granulating the TiO2-binder mixture; and drying the granulated TiO.sub.2-binder mixture to form TiO2-based scrubbing granules. Methods of using such TiO.sub.2-based scrubbing granules include introducing TiO.sub.2-based scrubbing granules to remove adherent deposits on an inner surface of a reactor or heat exchanger during processes of forming TiO.sub.2 particles and finishing the formed TiO.sub.2 particles into finished pigment products.

TiO2 based scrubbing granules, and methods of making and using such TiO2 based scrubbing granules

TiO.sub.2 based scrubbing granules, and methods of making and using such TiO.sub.2 based scrubbing granules are described. TiO2-based scrubbing granules include granulated TiO.sub.2 and about 0.5% to about 20% dry weight inorganic salt binder. Other TiO.sub.2 based scrubbing granules include unsintered granulated TiO2 and about 0.5% to about 20% dry weight inorganic salt binder. Inorganic salt binder include sodium aluminate. Methods of making TiO.sub.2 based scrubbing granules include i) combining TiO.sub.2 particles with inorganic salt binder to form TiO.sub.2-binder mixture comprising from about 0.5% to about 20% dry weight binder; ii) granulating the TiO2-binder mixture; and drying the granulated TiO.sub.2-binder mixture to form TiO2-based scrubbing granules. Methods of using such TiO.sub.2-based scrubbing granules include introducing TiO.sub.2-based scrubbing granules to remove adherent deposits on an inner surface of a reactor or heat exchanger during processes of forming TiO.sub.2 particles and finishing the formed TiO.sub.2 particles into finished pigment products.

METHOD FOR THE SYNTHESIS OF NANOCOMPOSITES BASED ON TiO2 AND CARBONATED NANOSTRUCTURES

The invention relates to a method for the synthesis of a nanocomposite compound comprising TiO.sub.2 nanoparticles bound to carbon nanostructures, characterised in that it comprises the following steps: a) mixing carbon nanostructures and at least one TiO.sub.2 precursor in a first liquid in order to form a stock suspension; b) nebulising said stock suspension and transporting it into a reaction chamber by means of a gaseous flow; and c) carrying out laser pyrolysis of said stock suspension in said reaction chamber in order to simultaneously form TiO.sub.2 nanoparticules and graft them onto the nano structures.

Precursors and methods for atomic layer deposition of transition metal oxides

Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.

Precursors and methods for atomic layer deposition of transition metal oxides

Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.

Reactor and method for production of nanostructures

A reactor and method for production of nanostructures, including metal oxide nanowires or nanoparticles, are provided. The reactor includes a regulated metal powder delivery system in communication with a dielectric tube; a plasma-forming gas inlet, whereby a plasma-forming gas is delivered substantially longitudinally into the dielectric tube; a sheath gas inlet, whereby a sheath gas is delivered into the dielectric tube; and a microwave energy generator coupled to the dielectric tube, whereby microwave energy is delivered into a plasma-forming gas. The method for producing nanostructures includes providing a reactor to form nanostructures and collecting the formed nanostructures, optionally from a filter located downstream of the dielectric tube.

Mesoporous metal oxide microsphere electrode compositions and their methods of making

Compositions and methods of making are provided for treated mesoporous metal oxide microspheres electrodes. The compositions include microspheres with an average diameter between about 200 nanometers and about 10 micrometers and mesopores on the surface and interior of the microspheres. The methods of making include forming a mesoporous metal oxide microsphere composition and treating the mesoporous metal oxide microspheres by at least annealing in a reducing atmosphere, doping with an aliovalent element, and coating with a coating composition.

Mesoporous metal oxide microsphere electrode compositions and their methods of making

Compositions and methods of making are provided for treated mesoporous metal oxide microspheres electrodes. The compositions include microspheres with an average diameter between about 200 nanometers and about 10 micrometers and mesopores on the surface and interior of the microspheres. The methods of making include forming a mesoporous metal oxide microsphere composition and treating the mesoporous metal oxide microspheres by at least annealing in a reducing atmosphere, doping with an aliovalent element, and coating with a coating composition.

Metal oxide particle production method and production device

An object of the present invention is to provide a method for producing metal oxide particles, in which metal oxide particles with high photocatalytic activity is produced, and a production apparatus therefor. The above object can be achieved by using a method for producing metal oxide particles, which includes subjecting a reaction gas containing metal chloride and an oxidizing gas containing no metal chloride in a reaction tube (11) to preheating, and then subjecting a combined gas composed of the reaction gas and the oxidizing gas to main heating in a main heating region (A) apart from the downstream side of the junction (5b), wherein the time until the combined gas from the junction (5b) arrives at the upstream end (A1) of the main heating region (A) is adjusted to be less than 25 milliseconds.

Metal oxide particle production method and production device

An object of the present invention is to provide a method for producing metal oxide particles, in which metal oxide particles with high photocatalytic activity is produced, and a production apparatus therefor. The above object can be achieved by using a method for producing metal oxide particles, which includes subjecting a reaction gas containing metal chloride and an oxidizing gas containing no metal chloride in a reaction tube (11) to preheating, and then subjecting a combined gas composed of the reaction gas and the oxidizing gas to main heating in a main heating region (A) apart from the downstream side of the junction (5b), wherein the time until the combined gas from the junction (5b) arrives at the upstream end (A1) of the main heating region (A) is adjusted to be less than 25 milliseconds.