The invention relates to a glass including, as represented by mol % based on elements: 8-25% of P; 8-40% of Sn; 20-80% of O; and 1-50% of F, in which the glass has a glass transition temperature Tg of 300° C. or lower, and the glass gives an infrared absorption spectrum satisfying A3240/A3100 of 0.6-1.2, where the A3100 is an absorbance per 1-mm thickness at a wavenumber of 3,100 cm.sup.−1 and the A3240 is an absorbance per 1-mm thickness at a wavenumber of 3,240 cm.sup.−1.

The invention relates to a glass including, as represented by mol % based on elements: 8-25% of P; 8-40% of Sn; 20-80% of O; and 1-50% of F, in which the glass has a glass transition temperature Tg of 300° C. or lower, and the glass gives an infrared absorption spectrum satisfying A3240/A3100 of 0.6-1.2, where the A3100 is an absorbance per 1-mm thickness at a wavenumber of 3,100 cm.sup.−1 and the A3240 is an absorbance per 1-mm thickness at a wavenumber of 3,240 cm.sup.−1.

An optical glass has refractive index nd greater than 1.59, Abbe number υd greater than 67, low photoelastic coefficient, good chemical stability and excellent grinding property. Fluorophosphate optical glass contains, by cation percentage contents, 30-40% of P.sup.5+, 12-20% of Al.sup.3+, 30-40% of Ba.sup.2+, 1.3-12% of Ca.sup.2+, 1-10% of Sr.sup.2+, 0-5% of La.sup.3+, 0-6% of Gd.sup.3+, 0-10% of Y.sup.3+, and contains, by anion percentage contents, 25-40% of F.sup.+ and 60-75% of O.sup.2−. The optical glass is applicable to the manufacturing methods such as high precision molding, secondary hot molding and cold working, in order to produce optical elements like high-performance sphere, aspheric surface, plane lens, prism and raster.

An optical glass has refractive index nd greater than 1.59, Abbe number υd greater than 67, low photoelastic coefficient, good chemical stability and excellent grinding property. Fluorophosphate optical glass contains, by cation percentage contents, 30-40% of P.sup.5+, 12-20% of Al.sup.3+, 30-40% of Ba.sup.2+, 1.3-12% of Ca.sup.2+, 1-10% of Sr.sup.2+, 0-5% of La.sup.3+, 0-6% of Gd.sup.3+, 0-10% of Y.sup.3+, and contains, by anion percentage contents, 25-40% of F.sup.+ and 60-75% of O.sup.2−. The optical glass is applicable to the manufacturing methods such as high precision molding, secondary hot molding and cold working, in order to produce optical elements like high-performance sphere, aspheric surface, plane lens, prism and raster.

To provide a near infrared cutoff filter glass which is excellent in optical properties such that the transmittance of light in the visible range is high and the transmittance of near infrared light is low. A near infrared cutoff filter glass comprising P, F, O, Cu and Ce, wherein by cation %, from 0.1 to 15% of Cu.sup.2+ is contained, and the ratio of Cu.sup.2+ to Ce.sup.4+ (Cu.sup.2+/Ce.sup.4+) is from 3.5 to 15.

To provide a near infrared cutoff filter glass which is excellent in optical properties such that the transmittance of light in the visible range is high and the transmittance of near infrared light is low. A near infrared cutoff filter glass comprising P, F, O, Cu and Ce, wherein by cation %, from 0.1 to 15% of Cu.sup.2+ is contained, and the ratio of Cu.sup.2+ to Ce.sup.4+ (Cu.sup.2+/Ce.sup.4+) is from 3.5 to 15.

A method of forming a sealed device comprising providing a first substrate having a first surface, providing a second substrate adjacent the first substrate, and forming a weld between an interface of the first substrate and the adjacent second substrate, wherein the weld is characterized by ((σ.sub.tensile stress location)/(σ.sub.interface laser weld))<<1 or <1 and σ.sub.interface laser weld>10 MPa or >1 MPa where σ.sub.tensile stress location is the stress present in the first substrate and σ.sub.interface laser weld is the stress present at the interface. This method may be used to manufacture a variety of different sealed packages.

A method of forming a sealed device comprising providing a first substrate having a first surface, providing a second substrate adjacent the first substrate, and forming a weld between an interface of the first substrate and the adjacent second substrate, wherein the weld is characterized by ((σ.sub.tensile stress location)/(σ.sub.interface laser weld))<<1 or <1 and σ.sub.interface laser weld>10 MPa or >1 MPa where σ.sub.tensile stress location is the stress present in the first substrate and σ.sub.interface laser weld is the stress present at the interface. This method may be used to manufacture a variety of different sealed packages.

Disclosed herein are sealed devices comprising a first substrate, a second substrate, an inorganic film between the first and second substrates, and at least one weld region comprising a bond between the first and second substrates. The weld region can comprise a chemical composition different from that of the inorganic film and the first or second substrates. The sealed devices may further comprise a stress region encompassing at least the weld region, in which a portion of the device is under a greater stress than the remaining portion of the device. Also disclosed herein are display and electronic components comprising such sealed devices.

Disclosed herein are sealed devices comprising a first substrate, a second substrate, an inorganic film between the first and second substrates, and at least one weld region comprising a bond between the first and second substrates. The weld region can comprise a chemical composition different from that of the inorganic film and the first or second substrates. The sealed devices may further comprise a stress region encompassing at least the weld region, in which a portion of the device is under a greater stress than the remaining portion of the device. Also disclosed herein are display and electronic components comprising such sealed devices.