Patent classifications
C03C8/12
Conductive paste used for solar cell electrodes
The present invention is directed to a conductive paste used for solar cell electrodes comprising, (i) 60 wt % to 95 wt % of a conductive powder, based on the total weight of the conductive paste, (ii) 0.1 wt % to 10 wt % of a lead-tellurium-oxide powder, based on the total weight of the conductive paste, comprising 20 wt % to 60 wt % of PbO and 20 wt % to 60 wt % of TeO.sub.2, based on the total weight of the lead-tellurium-oxide powder, (iii) 3 wt % to 38 wt % of an organic medium, based on the total weight of the conductive paste, and (iv) 0.01 wt % to 5.0 wt % of lithium oxide powder selected from the group consisting of LiMnO.sub.3, Li.sub.2WO.sub.4, Li.sub.2CO.sub.3, Li.sub.2TiO.sub.3, Li.sub.4Ti.sub.5O.sub.12, Li.sub.2MoO.sub.4 and a mixture thereof, based on the total weight of the conductive paste.
Ceramic Glass Powder and Solar Cell Metallization Paste Containing Ceramic Glass Powder
The present disclosure discloses a ceramic glass powder and a solar cell metallization paste containing the ceramic glass powder, and belongs to the technical field of solar cells. The present disclosure provides a novel formula mode of a glass powder including a crystallization nucleus component and a glass network component, that is, a formula of a ceramic glass powder that has a special crystallization behavior, a low crystallinity before sintering and a high crystallinity after the sintering, and a conductive metallization paste containing the ceramic glass powder is further obtained. The present disclosure solves the technical problem that by using metallization pastes in the prior art, a balance between corrosion of a silicon wafer and an ohmic contact is difficult to achieve. The efficiency of a solar cell is improved.
Ceramic Glass Powder and Solar Cell Metallization Paste Containing Ceramic Glass Powder
The present disclosure discloses a ceramic glass powder and a solar cell metallization paste containing the ceramic glass powder, and belongs to the technical field of solar cells. The present disclosure provides a novel formula mode of a glass powder including a crystallization nucleus component and a glass network component, that is, a formula of a ceramic glass powder that has a special crystallization behavior, a low crystallinity before sintering and a high crystallinity after the sintering, and a conductive metallization paste containing the ceramic glass powder is further obtained. The present disclosure solves the technical problem that by using metallization pastes in the prior art, a balance between corrosion of a silicon wafer and an ohmic contact is difficult to achieve. The efficiency of a solar cell is improved.
Low LOI Tellurium-Lithium-Silicon-Zirconium Frit System and Conductive Paste and Application Thereof
The present disclosure discloses a low LOI tellurium-lithium-silicon-zirconium frit system and a conductive paste and application thereof, and belongs to the field of conductive paste. In the low LOI tellurium-lithium-silicon-zirconium frit system, components of the frit are 24%-40% TeO.sub.2, 18%-24% Li.sub.2O, 4%-13% SiO.sub.2, 0-2% ZrO.sub.2, and a balance MO.sub.x, and M is one or a mixture of Na, K, Mg, Ca, Sr, Ti, V, Cr, Mo, W, Mn, Cu, Ag, Zn, Cd, B, Al, Ga, Tl, Ge, Pb, P, and Bi. There is no need to add additional surfactants, a viscosity change of the conductive paste prepared after standing for 30 days is less than 20%, the conductive paste has good stability, the water related weight loss of inorganic oxide of the conductive paste is less than 1.6%, and the application performance of the conductive paste is not affected after standing for 30 days.
Low LOI Tellurium-Lithium-Silicon-Zirconium Frit System and Conductive Paste and Application Thereof
The present disclosure discloses a low LOI tellurium-lithium-silicon-zirconium frit system and a conductive paste and application thereof, and belongs to the field of conductive paste. In the low LOI tellurium-lithium-silicon-zirconium frit system, components of the frit are 24%-40% TeO.sub.2, 18%-24% Li.sub.2O, 4%-13% SiO.sub.2, 0-2% ZrO.sub.2, and a balance MO.sub.x, and M is one or a mixture of Na, K, Mg, Ca, Sr, Ti, V, Cr, Mo, W, Mn, Cu, Ag, Zn, Cd, B, Al, Ga, Tl, Ge, Pb, P, and Bi. There is no need to add additional surfactants, a viscosity change of the conductive paste prepared after standing for 30 days is less than 20%, the conductive paste has good stability, the water related weight loss of inorganic oxide of the conductive paste is less than 1.6%, and the application performance of the conductive paste is not affected after standing for 30 days.
Lithium-tellurium silicon-lead bismuth multi-component glass-oxide-complex system and conductive paste containing same
The present disclosure discloses a lithium-tellurium silicon-lead bismuth multi-component glass-oxide-complex system and conductive paste containing same, belonging to the technical field of solar cells. According to the present disclosure, a “functional modularization” strategy is adopted in a formula design of the glass-oxide-complex system, and glass oxide systems with selective reactivity for different passivation layers are compounded based on the structures, compositions and thicknesses of the passivation layers, so that a paste formula is developed, which is composed of lithium-containing, tellurium-silicon-containing and lead-containing glass oxides. Due to adoption of the modularized formula strategy, active ingredients can be better controlled, and the overall paste formula is more optimized, so that the laminated passivation layers can be selectively burned through to obtain a more balanced contact, and better battery performance on silicon wafers with different passivation layer thicknesses can be achieved, thus achieving excellent photoelectric conversion efficiency.
Thick-film pastes containing lead-tellurium-lithium-oxides, and their use in the manufacture of semiconductor devices
The present invention provides a thick-film paste for printing the front side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-lithium-oxide dispersed in an organic medium.
Thick-film pastes containing lead-tellurium-lithium-oxides, and their use in the manufacture of semiconductor devices
The present invention provides a thick-film paste for printing the front side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-lithium-oxide dispersed in an organic medium.
Thick-film pastes containing lead- and tellurium-oxides, and their use in the manufacture of semiconductor devices
The present invention provides a thick-film paste for printing the front-side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-oxide dispersed in an organic medium.
Thick-film pastes containing lead- and tellurium-oxides, and their use in the manufacture of semiconductor devices
The present invention provides a thick-film paste for printing the front-side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal, and a lead-tellurium-oxide dispersed in an organic medium.