A glass container and a process for forming an inorganic silica coating on an exterior surface of the glass container to improve one or more surface characteristics of the glass container. A sol-gel solution including a polysilazane and an organic solvent is applied to the exterior surface of the glass container to form a sol-gel coating thereon. The glass container and the sol-gel coating are then exposed to a water vapor-containing environment and heated at a temperature of between 150 degrees Celsius and 600 degrees Celsius to transform the sol-gel coating into an inorganic silica coating. The as-formed silica coating has a hardness of greater than 8.5 GPa and is bonded to the exterior surface of the glass container through a plurality of siloxane bonds.

A layer of or including substoichiometric zirconium oxide is sputter deposited on a glass substrate via a substoichiometric zirconium oxide inclusive ceramic sputtering target of or including ZrO.sub.x. The coated article, with the substoichiometric ZrO.sub.x inclusive layer on the glass substrate, is then heat treated (e.g., thermally tempered) in an atmosphere including oxygen, which causes the substoichiometric ZrO.sub.x inclusive layer to transform into a scratch resistant layer of or including stoichiometric or substantially stoichiometric zirconium oxide (e.g., ZrO.sub.2), and causes the visible transmission of the coated article to significant increase.

A sapphire composite base material including: an inorganic glass substrate, a polyvinyl butyral or silica intermediate film on the inorganic glass substrate, and a single crystal sapphire film on the intermediate film. There is also provided a method for producing a sapphire composite base material, including steps of: forming an ion-implanted layer inside the single crystal sapphire substrate; forming a polyvinyl butyral or silica intermediate film on at least one surface selected from the surface of the single crystal sapphire substrate before or after the ion implantation, and a surface of an inorganic glass substrate; bonding the ion-implanted surface of the single crystal sapphire substrate to the surface of the inorganic glass substrate via the intermediate film to obtain a bonded body; and transferring a single crystal sapphire film to the inorganic glass substrate via the intermediate film.

A sapphire composite base material including: an inorganic glass substrate, a polyvinyl butyral or silica intermediate film on the inorganic glass substrate, and a single crystal sapphire film on the intermediate film. There is also provided a method for producing a sapphire composite base material, including steps of: forming an ion-implanted layer inside the single crystal sapphire substrate; forming a polyvinyl butyral or silica intermediate film on at least one surface selected from the surface of the single crystal sapphire substrate before or after the ion implantation, and a surface of an inorganic glass substrate; bonding the ion-implanted surface of the single crystal sapphire substrate to the surface of the inorganic glass substrate via the intermediate film to obtain a bonded body; and transferring a single crystal sapphire film to the inorganic glass substrate via the intermediate film.

It is difficult to obtain a glassy, monolithic molded body of an inorganic oxide with a high melting point and softening point. Although molding by sintering is possible, it is hard to obtain a molded body which is transparent and has high barrier properties. Further, producing molded bodies with the sol-gel process is costly, and it is difficult to produce a molded bodies of large size. In this invention, a molded body principally composed of inorganic oxides is produced with a method that involves a step in which an inorganic-organic hybrid compound, formed by an organic polymer having a hydroxyl group chemically bonding with an inorganic oxide or a derivative thereof, is heated in an atmosphere in which oxygen is present, and the organic polymer component of the inorganic-organic hybrid compound is oxidized and removed.

The present invention relates to the lead-zirconate-titanate (PZT) amorphous alloy plating solution which may be used to form a PZT amorphous alloy film having excellent mechanical and physical properties and a method for plating a PZT amorphous alloy using the same. The PZT amorphous alloy plating solution may include a Pb precursor, a Zr precursor, and a Ti precursor. 1050 parts by weight of the Zr precursor and 530 parts by weight of the Ti precursor may be included based on 100 parts by weight of the Pb precursor. Accordingly, electrical conductivity can be improved because the PZT amorphous alloy plating solution has a structure which has low crystallinity or which is amorphous. Furthermore, excellent electrical characteristics can be achieved because the PZT amorphous alloy plating solution has excellent conductivity or chemical stability.

In accordance with an example embodiment of the present invention, a method is disclosed. The method comprises providing a two-dimensional object comprising a lll-V group material, e.g. Boron nitride (BN), Boron carbon nitride (BCN), Aluminium nitride (AIN), Gallium nitride (GaN), Indium Nitride (InN), Indium phosphide (InP), Indium arsenide (InAs), Boron phosphide (BP), Boron arsenide (BAs), and Gallium phosphide (GaP) and/or a Transition Metal Dichalcogenides (TMD) group material, e.g Molybdenum sulfide (MoS2), Molybdenum diselenide (MoSe2), Tungsten sulfide (WS2), Tungsten diselenide (WSe2), Niobium sulfide (NbS2), Vanadium sulfide (VS2,), and Tantalum sulfide (TaS2) into an environment comprising oxygen; and exposing at least one part of the two-dimensional object to photonic irradiation in said environment, thereby oxidizing at least part of the material of the exposed part of the two-dimensional object.

In accordance with an example embodiment of the present invention, a method is disclosed. The method comprises providing a two-dimensional object comprising a lll-V group material, e.g. Boron nitride (BN), Boron carbon nitride (BCN), Aluminium nitride (AIN), Gallium nitride (GaN), Indium Nitride (InN), Indium phosphide (InP), Indium arsenide (InAs), Boron phosphide (BP), Boron arsenide (BAs), and Gallium phosphide (GaP) and/or a Transition Metal Dichalcogenides (TMD) group material, e.g Molybdenum sulfide (MoS2), Molybdenum diselenide (MoSe2), Tungsten sulfide (WS2), Tungsten diselenide (WSe2), Niobium sulfide (NbS2), Vanadium sulfide (VS2,), and Tantalum sulfide (TaS2) into an environment comprising oxygen; and exposing at least one part of the two-dimensional object to photonic irradiation in said environment, thereby oxidizing at least part of the material of the exposed part of the two-dimensional object.