C03C17/40

Method for electroless plating

The present invention discloses a method for electroless plating of a metal or metal alloy onto a metal or a metal alloy structure comprising a metal such as molybdenum or titanium and alloys containing such metals. The method comprises the steps of activation, treatment in an aqueous solution comprising at least one nitrogen-containing compound or a hydroxy carboxylic acid and electroless plating of a metal or metal alloy.

Method for electroless plating

The present invention discloses a method for electroless plating of a metal or metal alloy onto a metal or a metal alloy structure comprising a metal such as molybdenum or titanium and alloys containing such metals. The method comprises the steps of activation, treatment in an aqueous solution comprising at least one nitrogen-containing compound or a hydroxy carboxylic acid and electroless plating of a metal or metal alloy.

ENERGY-SAVING GLASS AND METHOD OF MANUFACTURING THE SAME

An energy-saving glass includes a glass substrate, and a periodic metal layer deposited on the glass substrate and having a honeycomb array of round holes. A method of manufacturing the energy-saving glass includes: providing a template having multiple template spots arranged in a honeycomb array; forming on the template a transfer metal layer having multiple metal spots disposed respectively on the template spots; transferring the metal spots onto a photoresist layer on a glass substrate; etching the photoresist layer exposed from the metal spots to leave photoresist spots underlying the metal spots on the glass substrate; forming a periodic metal layer around the photoresist spots; and removing the photoresist spots.

COPPER-ALLOY CAPPING LAYERS FOR METALLIZATION IN TOUCH-PANEL DISPLAYS

In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

COPPER-ALLOY CAPPING LAYERS FOR METALLIZATION IN TOUCH-PANEL DISPLAYS

In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

LOW CORROSION SOLAR CONTROL STACK
20170227691 · 2017-08-10 ·

A composite stack may include a first substrate layer, a functional layer that includes silver, a first blocker layer that includes a corrosion resistant material and a second blocker layer that includes a blocker material selected from any one of Ti, Ni, Cr, Cu, Al, Mg, NiCr, or alloys thereof. The second blocker layer may be adjacent to the first blocker layer. The composite stack may further have a VLT of at least about 50% and a TSER of at least about 30%. The composite stack may also or in the alternative have an emissivity of not greater than about 20%.

Materials and Methods for Passivation of Metal-Plated Through Glass Vias

A through-glass via (TGV) formed in a glass substrate may comprise a metal plating layer formed in the TGV. The TGV may have a three-dimensional (3D) topology through the glass substrate and the metal plating layer conformally covering the 3D topology. The TGV may further comprise a barrier layer disposed over the metal plating layer, and a metallization layer disposed over the barrier layer. The metallization layer may be electrically coupled to the metal plating layer through the barrier layer. The barrier layer may comprise a metal-nitride film disposed on the metal plating layer that is electrically coupled to the metallization layer. The barrier layer may comprise a metal film disposed over the metal plating layer and over a portion of glass surrounding the TGV, and an electrically-insulating film disposed upon the metal film, the electrically-insulating film completely overlapping the metal plating layer and partially overlapping the metal film.

GLASS BASED EMPTY SUBSTRATE INTEGRATED WAVEGUIDE DEVICES
20220173488 · 2022-06-02 ·

The present invention includes a method of creating high Q empty substrate integrated waveguide devices and/or system with low loss, mechanically and thermally stabilized in photodefinable glass ceramic substrate. The photodefinable glass ceramic process enables high performance, high quality, and/or low-cost structures. Compact low loss RF empty substrate integrated waveguide devices are a cornerstone technological requirement for RF systems, in particular, for portable systems.

Through electrode substrate and semiconductor device
11728243 · 2023-08-15 · ·

A through electrode substrate includes a substrate having a through hole extending through between a first face and a second face, a diameter of the through hole not having a minimum value inside the through hole; and a conductor arranged inside the through hole, wherein the through hole has a shape having a value obtained by summing a first to an eighth inclination angle at a first to an eighth position, respectively, of an inner face of the through hole of 8.0° or more, each of the first to the eighth inclination angle is an angle of the inner face with respect to a center axis of the through hole, and the first to the eighth position correspond to positions at distances of 6.25%, 18.75%, 31.25%, 43.75%, 56.25%, 68.75%, 81.25%, and 93.75%, respectively, from the first face in a section from the first face to the second face.

Through electrode substrate and semiconductor device
11728243 · 2023-08-15 · ·

A through electrode substrate includes a substrate having a through hole extending through between a first face and a second face, a diameter of the through hole not having a minimum value inside the through hole; and a conductor arranged inside the through hole, wherein the through hole has a shape having a value obtained by summing a first to an eighth inclination angle at a first to an eighth position, respectively, of an inner face of the through hole of 8.0° or more, each of the first to the eighth inclination angle is an angle of the inner face with respect to a center axis of the through hole, and the first to the eighth position correspond to positions at distances of 6.25%, 18.75%, 31.25%, 43.75%, 56.25%, 68.75%, 81.25%, and 93.75%, respectively, from the first face in a section from the first face to the second face.