In order to reduce the degree of relaxation after an optical substrate has been compacted, in particular after a longer period, substrates (51) or reflective optical elements (50), in particular for EUV lithography, with substrates (51) of this type, are proposed. These substrates (51), which have a surface region (511) with a reflective coating (54), are characterised in that, at least near to the surface region (511), the titanium-doped quartz glass has a proportion of Si—O—O—Si bonds of at least 1*10.sup.16/cm.sup.3 and/or a proportion of Si—Si bonds of at least 1*10.sup.16/cm.sup.3 or, along a notional line (513) perpendicular to the surface region (511), over a length (517) of 500 nm or more, a hydrogen content of more than 5×10.sup.18 molecules/cm.sup.3.

In order to reduce the degree of relaxation after an optical substrate has been compacted, in particular after a longer period, substrates (51) or reflective optical elements (50), in particular for EUV lithography, with substrates (51) of this type, are proposed. These substrates (51), which have a surface region (511) with a reflective coating (54), are characterised in that, at least near to the surface region (511), the titanium-doped quartz glass has a proportion of Si—O—O—Si bonds of at least 1*10.sup.16/cm.sup.3 and/or a proportion of Si—Si bonds of at least 1*10.sup.16/cm.sup.3 or, along a notional line (513) perpendicular to the surface region (511), over a length (517) of 500 nm or more, a hydrogen content of more than 5×10.sup.18 molecules/cm.sup.3.

A glass wiring board that can be kept from cracking by better preventing concentration of stresses in a glass plate on which a conductor layer including an electrolytic copper plating layer is provided, the wiring board includes: a glass plate; a first metal layer covering at least a part of the glass plate; and a second metal layer covering at least a part of the first metal layer, and the area of the first metal layer in contact with the second metal layer is smaller than the area of the second metal layer facing the first metal layer.

In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

A method of manufacturing a glass article comprising: forming a first layer of a first metal on a glass substrate, the glass substrate comprising silicon dioxide and aluminum oxide; subjecting the glass substrate with the first layer of the first metal to a first thermal treatment; forming a second layer of a second metal over the first layer of the first metal; and subjecting the second layer of the second metal to a second thermal treatment, the first thermal treatment and the second thermal treatment inducing intermixing of the first metal, the second metal, and at least one of aluminum, aluminum oxide, silicon, and silicon dioxide of the glass substrate to form a metallic region comprising the first metal, the second metal, aluminum oxide, and silicon dioxide. The first metal can be silver. The second metal can be copper.

A through electrode substrate includes a substrate having a through hole extending through between a first face and a second face, a diameter of the through hole not having a minimum value inside the through hole; and a conductor arranged inside the through hole, wherein the through hole has a shape having a value obtained by summing a first to an eighth inclination angle at a first to an eighth position, respectively, of an inner face of the through hole of 8.0 or more, each of the first to the eighth inclination angle is an angle of the inner face with respect to a center axis of the through hole, and the first to the eighth position correspond to positions at distances of 6.25%, 18.75%, 31.25%, 43.75%, 56.25%, 68.75%, 81.25%, and 93.75%, respectively, from the first face in a section from the first face to the second face.

A through electrode substrate includes a substrate having a through hole extending through between a first face and a second face, a diameter of the through hole not having a minimum value inside the through hole; and a conductor arranged inside the through hole, wherein the through hole has a shape having a value obtained by summing a first to an eighth inclination angle at a first to an eighth position, respectively, of an inner face of the through hole of 8.0 or more, each of the first to the eighth inclination angle is an angle of the inner face with respect to a center axis of the through hole, and the first to the eighth position correspond to positions at distances of 6.25%, 18.75%, 31.25%, 43.75%, 56.25%, 68.75%, 81.25%, and 93.75%, respectively, from the first face in a section from the first face to the second face.

The present invention includes a method of creating electrical air gap or other low loss low cost RF mechanically and thermally stabilized interdigitated resonate filter in photo definable glass ceramic substrate. A ground plane may be used to adjacent to or below the RF filter in order to prevent parasitic electronic signals, RF signals, differential voltage build up and floating grounds from disrupting and degrading the performance of isolated electronic devices by the fabrication of electrical isolation and ground plane structures on a photo-definable glass substrate.

A synthetic quartz glass lid for use in optical device packages is prepared by furnishing a synthetic quartz glass lid precursor comprising a synthetic quartz glass substrate (1) and a metal or metal compound film (2), and forming a metal base adhesive layer (3) on the metal or metal compound film (2). The metal or metal compound film contains Ag, Bi, and at least one element selected from P, Sb, Sn and In.