In a three-dimensional printing method example, a build material is applied. A first liquid functional material is applied on at least a portion of the build material. The first liquid functional material includes ferromagnetic nanoparticles that are selected from the group consisting of an iron oxide, a ferrite, a combination of the iron oxide and a ferromagnetic metal oxide, and combinations thereof. The build material is exposed to electromagnetic radiation having a frequency ranging from about 5 kHz to about 300 GHz to sinter the portion of the build material in contact with the first liquid functional material.

A polycrystalline ferrite composition comprises a formula of M.sub.5Me.sub.2Ti.sub.3Fe.sub.12O.sub.31, wherein M is Ba.sup.2+, Se.sup.+, or a combination thereof; and Me is Mg.sup.2+, Zn.sup.2+, Cu.sup.2+, Co.sup.2+, or a combination thereof; and has an average grain size of 1 micrometer to 100 micrometers. A composite comprises a polymer matrix; and the polycrystalline ferrite composition. Methods of making the polycrystalline ferrite composition and the composite are also disclosed.

Disclosed herein are embodiments of composite hexagonal ferrite materials formed from a combination of Y phase and Z phase hexagonal ferrite materials. Advantageously, embodiments of the material can have a high resonant frequency as well as a high permeability. In some embodiments, the materials can be useful for magnetodielectric antennas.

A ferrite sintered magnet 100 comprises M-type ferrite crystal grains 4 and multiple-crystal grain boundaries 6b surrounded by three or more of the M-type ferrite crystal grains 4. The ferrite sintered magnet 100 contains at least Fe, Ca, B, and Si, and contains 0.005 to 0.9 mass % of B in terms of B.sub.2O.sub.3. The multiple-crystal grain boundaries 6b contain Si and Ca, and in a case where the molar ratio of Ca to Si in the multiple-crystal grain boundaries 6b is represented by (Ca/Si).sub.G, the following formula is satisfied.

0.1<(Ca/Si).sub.G<0.9

To provide magnetoplumbite-type hexagonal ferrite particles represented by Formula (1) and having a single crystal phase, and the application. In Formula (1), A represents at least one metal element selected from the group consisting of Sr, Ba, Ca, and Pb, and x satisfies 1.5x8.0.

AFe.sub.(12-x)Al.sub.xO.sub.19Formula (1)

Disclosed herein are embodiments of composite hexagonal ferrite materials formed from a combination of Y phase and Z phase hexagonal ferrite materials. Advantageously, embodiments of the material can have a high resonant frequency as well as a high permeability. In some embodiments, the materials can be useful for magnetodielectric antennas.

A ferrite sintered magnet 100 comprises M-type ferrite crystal grains 4 having a hexagonal structure, two-crystal grain boundaries 6a formed between two of the M-type ferrite crystal grains 4, and multiple-crystal grain boundaries 6b surrounded by three or more of the M-type ferrite crystal grains 4. This ferrite sintered magnet 100 contains at least Fe, Ca, B, and Si, and contains B in an amount of 0.005 to 0.9 mass % in terms of B.sub.2O.sub.3, the two-crystal grain boundaries 6a and the multiple-crystal grain boundaries 6b contain Si and Ca, and in a cross-section parallel to a c-axis of the ferrite sintered magnet, when the number of multiple-crystal grain boundaries 6b having a maximum length of 0.49 to 5 m per cross-sectional area of 76 m.sup.2 is N, N is 7 or less.

A ferrite sintered magnet comprising an M type Sr ferrite having a hexagonal structure as a main phase, wherein the ferrite sintered magnet does not substantially comprise a rare earth element and Co, a content of B is 0.005 to 0.9% by mass in terms of B.sub.2O.sub.3, and a content of Zn is 0.01 to 1.2% by mass in terms of ZnO.

A piezoelectric composition comprises silver and an oxide containing bismuth, barium, iron, and titanium. The oxide has a perovskite structure. The mass of the oxide is represented by M.sub.ABO3 and the mass of the silver is represented by M.sub.AG. 100M.sub.AG/M.sub.ABO3 is 0.01 or more and 10.00 or less.

The present invention relates to new multiferroic materials. More particularly, the present invention relates to new multiferroic single phase ceramic materials as well as to thin films formed from these materials, methods of preparing these materials and their use as multiferroic materials in electronic components and devices.