Disclosed are a member for a gas sensor, a gas sensor using the member, and a method of fabricating the same. Specifically, disclosed are a member for a gas sensor using a metal oxide nanofiber material in which nanocatalysts have been uniformly bound and functionalized using chitosans with which nanoparticle catalysts have been combined, a gas sensor using the member, and a method of fabricating the same.

[Object] To provide a sputtering target for producing an oxide semiconductor thin film having high properties, which serves as a substitute for IGZO, and a method of producing the same.

[Solving Means] In order to achieve the above-mentioned object, a sputtering target according to an embodiment of the present invention includes: an oxide sintered body including indium, tin, and germanium, in which an atom ratio of germanium with respect to a total of indium, tin, and germanium is 0.07 or more and 0.40 or less, and an atom ratio of tin with respect to the total of indium, tin, and germanium is 0.04 or more and 0.60 or less. As a result, it is possible to achieve transistor characteristics of having mobility of 10 cm.sup.2/Vs or more.

[Object] To provide a sputtering target for producing an oxide semiconductor thin film having high properties, which serves as a substitute for IGZO, and a method of producing the same.

[Solving Means] In order to achieve the above-mentioned object, a sputtering target according to an embodiment of the present invention includes: an oxide sintered body including indium, tin, and germanium, in which an atom ratio of germanium with respect to a total of indium, tin, and germanium is 0.07 or more and 0.40 or less, and an atom ratio of tin with respect to the total of indium, tin, and germanium is 0.04 or more and 0.60 or less. As a result, it is possible to achieve transistor characteristics of having mobility of 10 cm.sup.2/Vs or more.

Specific organometallic compounds of Formula I: Q.sub.x-Sn-(A.sup.1R.sup.1′.sub.z).sub.4-x or Formula II: Sn(NR.sup.2(CH.sub.2).sub.nA.sup.2).sub.2 useful for the deposition of high purity tin oxide, as well as methods of using such compounds are disclosed. Also disclosed are compositions of organometallic compounds useful for the deposition of high purity tin oxide that in combination improve stability. Also disclosed are processes for dry etching tin oxide with a particular etchant gas and/or a process for dry etching a substrate using a particular etchant gas with a specific additive.

Specific organometallic compounds of Formula I: Q.sub.x-Sn-(A.sup.1R.sup.1′.sub.z).sub.4-x or Formula II: Sn(NR.sup.2(CH.sub.2).sub.nA.sup.2).sub.2 useful for the deposition of high purity tin oxide, as well as methods of using such compounds are disclosed. Also disclosed are compositions of organometallic compounds useful for the deposition of high purity tin oxide that in combination improve stability. Also disclosed are processes for dry etching tin oxide with a particular etchant gas and/or a process for dry etching a substrate using a particular etchant gas with a specific additive.

An oxide semiconductor film contains In, Ga, and Sn at respective atomic ratios of 0.01≤Ga/(In+Ga+Sn)≤0.30 . . . (1), 0.01≤Sn/(In+Ga+Sn)≤0.40 . . . (2), and 0.55≤In/(In+Ga+Sn)≤0.98 . . . (3), and a rare-earth element X at an atomic ratio of 0.03≤X/(In+Ga+Sn+X)≤0.25 . . . (4).

A sputtering target having a one-piece top coat comprising a mixture of oxides of zinc, tin, and optionally gallium, characterized in that said one-piece top coat has a length of at least 80 cm; a method for forming such a sputtering target and the use of such a target for forming films.

A sputtering target having a one-piece top coat comprising a mixture of oxides of zinc, tin, and optionally gallium, characterized in that said one-piece top coat has a length of at least 80 cm; a method for forming such a sputtering target and the use of such a target for forming films.

A three-dimensional shaped article production method includes a layer formation step of forming a layer by ejecting a composition containing particles and a solvent in a predetermined pattern using a dispenser, a measurement step of determining the height of the layer, and a bonding step of subjecting a stacked body including a plurality of layers to a bonding treatment for bonding the particles, wherein when n represents an arbitrary integer of 1 or more, by selecting driving waveform data for the dispenser when ejecting the composition from a data group including a plurality of pieces of driving waveform data based on the information of the height of the layer in the n-th position (n-th layer) determined in the measurement step, the ejection amount of the composition per unit area onto the n-th layer in the layer formation step of forming the layer in the (n+1)th position ((n+1)th layer) is adjusted.

Micron scale tin oxide-based semiconductor devices are provided. Reactive-ion etching is used to produce a micron-scale electronic device using semiconductor films with tin oxides, such as barium stannate (BaSnO3). The electronic devices produced with this approach have high mobility, drain current, and on-off ratio without adversely affecting qualities of the tin oxide semiconductor, such as resistivity, electron or hole mobility, and surface roughness. In this manner, electronic devices, such as field-effect transistors (e.g., thin-film transistors (TFTs)), are produced having micron scale channel lengths and exhibiting complete depletion at room temperature.