A dielectric composition includes main phases and Ca-RE-Si—O segregation phases. The main phases include a main component expressed by ABO.sub.3. “A” includes at least one selected from barium and calcium. “B” includes at least one selected from titanium and zirconium. “RE” represents at least one of rare earth elements. A molar ratio of (Si/Ca) is larger than one. A molar ratio of (Si/RE) is larger than one, provided that the molar ratio of (Si/RE) is a molar ratio of silicon included in the segregation phases to the rare earth elements included therein. An average length of major axes of the segregation phases is 1.30-2.80 times as large as an average particle size of the main phases. An average length of minor axes of the segregation phases is 0.21-0.48 times as large as an average particle size of the main phases.

A ceramic electronic device includes a multilayer chip in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers including Ni as a main phase are alternately stacked. At least one of the plurality of dielectric layers includes a secondary phase including Si, at an interface between the at least one of the plurality of dielectric layers and one of the plurality of internal electrode layers next to the at least one of the plurality of dielectric layers. The one of the plurality of internal electrode layers includes a layer including an additive element including one or more of Au, Pt, Cu, Fe, Cr, Zn, and In, at a region contacting the secondary phase at the interface.

A dielectric composition includes a dielectric grain including a perovskite compound and a first segregation phase including at least Ca, Al, Si, and O.

A hard lead zirconate titanate (PZT) ceramic has an ABO.sub.3 structure with A sites and B sites. The PZT ceramic is doped with Mn and with Nb on the B sites and the ratio Nb/Mn is <2. A piezoelectric multilayer component having such a PZT ceramic and also a method for producing a piezoelectric multilayer component are also disclosed.

A lead-free piezoelectric ceramic sensor material and a preparation method thereof, and relates to the technical field of piezoelectric ceramic processing. The main raw materials of the lead-free piezoelectric ceramic sensor material disclosed in the present disclosure are a barium carbonate, a calcium carbonate, a zirconia, a titanium dioxide, a strontium carbonate, an oxidation bait, a bismuth oxide, a composite binder and a dispersant agent. The preparation method is prepared through the steps of preparing ingredients, ball milling, granulating and tableting, debinding, and sintering, and the lead-free piezoelectric ceramic sensor material can be made into a lead-free piezoelectric sensor through applying an electrode and electrode polarizing. The present disclosure has an excellent compactness and a good chemical stability. And the piezoelectric sensor made of the lead-free piezoelectric ceramic sensor material has a high sensitivity, a strong working stability, an excellent piezoelectric and has a high Curie temperature.

A lead-free piezoelectric ceramic sensor material and a preparation method thereof, and relates to the technical field of piezoelectric ceramic processing. The main raw materials of the lead-free piezoelectric ceramic sensor material disclosed in the present disclosure are a barium carbonate, a calcium carbonate, a zirconia, a titanium dioxide, a strontium carbonate, an oxidation bait, a bismuth oxide, a composite binder and a dispersant agent. The preparation method is prepared through the steps of preparing ingredients, ball milling, granulating and tableting, debinding, and sintering, and the lead-free piezoelectric ceramic sensor material can be made into a lead-free piezoelectric sensor through applying an electrode and electrode polarizing. The present disclosure has an excellent compactness and a good chemical stability. And the piezoelectric sensor made of the lead-free piezoelectric ceramic sensor material has a high sensitivity, a strong working stability, an excellent piezoelectric and has a high Curie temperature.

A ceramic electronic device includes a multilayer structure in which a plurality of dielectric layers and a plurality of internal electrode layers are alternately stacked. Each of the plurality of dielectric layers includes ceramic grains of a main component thereof expressed by (Ba.sub.1−x−yCa.sub.xSr.sub.y)(Ti.sub.1−zZr.sub.z)O.sub.3 (0<x≤0.2, 0≤y≤0.1, 0≤z≤0.1). D3<D1<D2 is satisfied when an average grain diameter of the ceramic grains of the main component of the plurality of dielectric layers in a section in which each two internal electrode layers is D1, an average grain diameter of the ceramic grains of the main component of first dielectric layers which are located at different height positions from the internal electrode layers is D2, an average grain diameter of the ceramic grains of the main component of second dielectric layers which are located at same height positions of the internal electrode layers is D3.

A ceramic electronic component includes: a body including dielectric layers and internal electrodes; and external electrodes disposed on the body and connected to the internal electrodes, wherein the dielectric layer includes a plurality of first secondary phases, the first secondary phase is a secondary phase including Ni, Mg, Al, Si, and O, and at least one of the plurality of first secondary phases has a ratio of a major axis length to a minor axis length of 4 or more.

A ceramic electronic component includes a body including a dielectric layer and an internal electrode, and an external electrode disposed on the body and connected to the internal electrode. The dielectric layer includes a plurality of dielectric grains, and at least one of the plurality of dielectric grains has a core-dual shell structure having a core and a dual shell. The dual shell includes a first shell surrounding at least a portion of the core, and a second shell surrounding at least a portion of the first shell, and a concentration of a rare earth element included in the second shell is more than 1.3 times to less than 3.8 times a concentration of a rare earth element included in the first shell.

A dielectric composition includes a main phase and a Ca—Si—P—O segregation phase. The main phase includes a main component expressed by ABO.sub.3. “A” includes at least one selected from calcium and strontium. “B” includes at least one selected from zirconium, titanium, hafnium, and manganese. The Ca—Si—P—O segregation phase includes at least calcium, silicon, and phosphorus.