A polycrystalline super hard construction comprises a body of polycrystalline super hard material and a substrate bonded to the body along an interface. The substrate a first end surface forming the interface, the first end surface comprising a projection extending from the body of the substrate into the body of super hard material towards the cutting face, the body of polycrystalline material extending around the projection. The body of polycrystalline material comprises a first region more thermally stable than a second region, the first region comprising an annular portion located around the projection, the second region extending between and bonding the first region to the substrate. The first region has a thickness from the cutting face along the peripheral side edge to the interface of at least around 3 mm and a portion of the projection has a thickness measured in a plane extending along the longitudinal axis of at least around 3 mm.

A polycrystalline super hard construction comprises a body of polycrystalline super hard material and a substrate bonded to the body along an interface. The substrate a first end surface forming the interface, the first end surface comprising a projection extending from the body of the substrate into the body of super hard material towards the cutting face, the body of polycrystalline material extending around the projection. The body of polycrystalline material comprises a first region more thermally stable than a second region, the first region comprising an annular portion located around the projection, the second region extending between and bonding the first region to the substrate. The first region has a thickness from the cutting face along the peripheral side edge to the interface of at least around 3 mm and a portion of the projection has a thickness measured in a plane extending along the longitudinal axis of at least around 3 mm.

A reaction-bonded silicon carbide (SiC) body is produced by: providing a preform including ceramic elements and carbon, and one or more surface features; providing a powder which includes diamond particles and carbon; locating the powder in the surface feature(s); and infiltrating the preform and the powder with molten silicon (Si) to form reaction-bonded SiC in the preform, and to form reaction-bonded SiC coatings on the diamond particles. The present disclosure also relates to a device/component which includes: a main body portion and discrete elements located at least partially within the main body portion. The main body portion may include reaction-bonded SiC and Si, but not diamond, while the discrete elements include diamond particles, reaction-bonded SiC coatings surrounding the diamond particles, and Si. According to the present disclosure, diamond may be advantageously located only where it is needed.

This disclosure relates to a polycrystalline diamond (PCD) body comprising a PCD material formed of intergrown diamond grains forming a diamond network, and an iron-containing binder.

This disclosure relates to a polycrystalline diamond (PCD) body comprising a PCD material formed of intergrown diamond grains forming a diamond network, and an iron-containing binder.

A cutting element comprises a supporting substrate, and a cutting table attached to an end of the supporting substrate. The cutting table comprises inter-bonded diamond particles, and a thermally stable material within interstitial spaces between the inter-bonded diamond particles. The thermally stable material comprises a carbide precipitate having the general chemical formula, A.sub.3XZ.sub.n-1, where A comprises one or more of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U; X comprises one or more of Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P; Z comprises C; and n is greater than or equal to 0 and less than or equal to 0.75. A method of forming a cutting element, an earth-boring tool, a supporting substrate, and a method of forming a supporting substrate are also described.

A cutting element comprises a supporting substrate, and a cutting table attached to an end of the supporting substrate. The cutting table comprises inter-bonded diamond particles, and a thermally stable material within interstitial spaces between the inter-bonded diamond particles. The thermally stable material comprises a carbide precipitate having the general chemical formula, A.sub.3XZ.sub.n-1, where A comprises one or more of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U; X comprises one or more of Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P; Z comprises C; and n is greater than or equal to 0 and less than or equal to 0.75. A method of forming a cutting element, an earth-boring tool, a supporting substrate, and a method of forming a supporting substrate are also described.

The invention relates to a process for preparing silicon-containing composite particles in a fluidized bed. Porous conductive particles having a defined particle size and pore structure are combined with a particulate additive having defined particle size, density and BET surface area. The combined porous conductive particles and particulate additive are subjected to chemical vapour infiltration in a fluidised bed to cause deposition of silicon in the pores of the porous conductive particles.

The invention relates to a process for preparing silicon-containing composite particles in a fluidized bed. Porous conductive particles having a defined particle size and pore structure are combined with a particulate additive having defined particle size, density and BET surface area. The combined porous conductive particles and particulate additive are subjected to chemical vapour infiltration in a fluidised bed to cause deposition of silicon in the pores of the porous conductive particles.

A reaction-bonded silicon carbide (SiC) body is produced by: providing a preform including ceramic elements and carbon, and one or more surface features; providing a powder which includes diamond particles and carbon; locating the powder in the surface feature(s); and infiltrating the preform and the powder with molten silicon (Si) to form reaction-bonded SiC in the preform, and to form reaction-bonded SiC coatings on the diamond particles. The present disclosure also relates to a device/component which includes: a main body portion and discrete elements located at least partially within the main body portion. The main body portion may include reaction-bonded SiC and Si, but not diamond, while the discrete elements include diamond particles, reaction-bonded SiC coatings surrounding the diamond particles, and Si. According to the present disclosure, diamond may be advantageously located only where it is needed.