Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Vapor deposition processes and articles formed by those processes utilizing such high purity SiOC and SiC.

A ceramic gas injector and method of fabrication are described. The gas injector has an inlet portion to which a gas is introduced via an inlet hole and contains a conformal channel between the inlet hole and a sidewall, an outlet portion from which the gas is provided from the gas injector and a collar disposed between the inlet and outlet portions. The channel extends into the collar. The channel has channel sections each of which extends through the inlet portion and terminates at both inlet ends before reaching the inlet face and collar ends before reaching the outlet portion. Alternating adjacent pairs of channel sections are connected via the inlet ends with adjacent pairs that are not connected via the inlet ends connected via the collar ends. Ports in a sidewall of the collar are connected with an adjacent pairs of sections not connected via the inlet ends.

A complex composite particle is made of a coal dust and binder composite that is pyrolyzed. Constituent portions of the composite react together causing the particles to increase in density and reduce in size during pyrolyzation, yielding a particle suitable for use as a proppant or in a composite structure.

A composite article comprises a substrate, the substrate comprising a silicon containing material and an additive comprising boron nitride nanotubes.

There is provided synthetic proppants, and in particular polysilocarb derived ceramic proppants. There is further provided hydraulic fracturing treatments utilizing these proppants, and methods of enhance hydrocarbon recovery.

A doped SiOC liquid starting material provides a p-type polymer derived ceramic SiC crystalline materials, including boules and wafers. P-type SiC electronic devices. Low resistivity SiC crystals, wafers and boules, having phosphorous as a dopant. Polymer derived ceramic doped SiC shaped charge source materials for vapor deposition growth of doped SiC crystals.

A method of treating a preceramic material includes providing a preceramic polycarbosilane or polycarbosiloxane material that includes a moiety Si—O-M, where Si is silicon, O is oxygen and M is at least one metal that includes at least one transition metal, and thermally converting the preceramic polycarbosilane or polycarbosiloxane that includes the moiety Si—O-M material into a ceramic material.

Provided herein are methods for making a freeze-cast material having a internal structure, the methods comprising steps of: determining the internal structure of the material, the internal structure having a plurality of pores, wherein: each of the plurality of pores has directionality; and the step of determining comprises: selecting a temperature gradient and a freezing front velocity to obtain the determined internal structure based on the selected temperature gradient and the selected freezing front velocity; directionally freezing a liquid formulation to form a frozen solid, the step of directionally freezing comprising: controlling the temperature gradient and the freezing front velocity to match the selected temperature gradient and the selected freezing front velocity during directionally freezing; wherein the liquid formulation comprises at least one solvent and at least one dispersed species; and subliming the at least one solvent out of the frozen solid to form the material.

Silicon (Si) based materials and methods of making those materials. More specifically, methods and materials having silicon, oxygen and carbon that form filled and unfilled plastic materials and filled and unfilled ceramics.

To provide a sintered material having excellent oxidation resistance, as well as excellent abrasion resistance and chipping resistance. A sintered material containing a first compound formed of Ti, Al, Si, O, and N is provided.