A plasma processing device member according to the disclosure includes a base material and a film formed of a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride, or a rare-earth element nitride, the film being disposed on at least part of the base material. The film includes a surface to be exposed to plasma, the surface having an arithmetic mean roughness Ra of 0.01 μm or more and 0.1 μm or less, the surface being provided with a plurality of pores, and a value obtained by subtracting an average equivalent circle diameter of the pores from an average distance between centroids of adjacent pores is 28 μm or more and 48 μm or less. A plasma processing device according to the disclosure includes the plasma processing device member described above.

The present disclosure provides a method of making a ceramic article. The method includes (a) obtaining a photopolymerizable slurry or sol including a plurality of ceramic particles distributed in the photopolymerizable slurry or sol and (b) selectively polymerizing the photopolymerizable slurry or sol using actinic radiation and continuous movement of a build substrate through the photopolymerizable slurry or sol to form a gelled article. The method also includes (c) extracting solvent from the gelled article to form an aerogel article or a xerogel article; (d) heat treating the aerogel article or the xerogel article to form a porous ceramic article; and (e) sintering the porous ceramic article to form a sintered ceramic article. The sintered ceramic article exhibits a particular density. Further, additive manufactured ceramic articles are provided that exhibit a particular density, opacity, or both. Preferably, all cross-sectional portions of an interior of the ceramic article having selected dimensions are free of a frequency analysis signal maxima larger than a background signal.

An aluminum nitride sintered body contains 1 to 5% by weight of yttrium oxide (Y.sub.2O.sub.3), 10 to 100 ppm by weight of titanium (Ti), and the balance being aluminum nitride (AlN). Accordingly, a volume resistance value and thermal conductivity at a high temperature are improved, and the generation of impurities during a semiconductor manufacturing process can be suppressed.

An aluminum nitride sintered body contains 1 to 5% by weight of yttrium oxide (Y.sub.2O.sub.3), 10 to 100 ppm by weight of titanium (Ti), and the balance being aluminum nitride (AlN). Accordingly, a volume resistance value and thermal conductivity at a high temperature are improved, and the generation of impurities during a semiconductor manufacturing process can be suppressed.

A fiber-composite part having one or more electronic components that are located in arbitrary regions of the internal volume of the part are fabricated using a preform charge. The preform charge has a structure that corresponds to that of the mold cavity in which the part is being formed. By incorporating the electronic components in the preform charge, such components are then precisely located, spatially oriented, and constrained, and such location and orientation is maintained during molding to produce a part with the electronic components in the desired locations and orientations within its internal volume.

Paste compositions for additive manufacturing and methods for the same are provided. The paste composition may include an organic vehicle, and one or more powders dispersed in the organic vehicle. The organic vehicle may include a solvent, a polymeric binder, a thixotropic additive, and a dispersant. The organic vehicle may be configured to provide the paste composition with a suitable viscosity. The organic vehicle may also be configured to provide a stable paste composition for a predetermined period of time.

An AlN joined body includes a first AlN member and a second AlN member that are joined together. The content of yttria in the first AlN member is equal to or below the detection limit. The second AlN member contains yttria.

There is provided a group III nitride laminate, including: a substrate comprised of silicon carbide; a first layer comprised of aluminum nitride and formed on the substrate; a second layer comprised of gallium nitride and formed on the first layer; and a third layer formed on the second layer and comprised of group III nitride having an electron affinity lower than that of the gallium nitride which is comprised in the second layer, the second layer having a thickness of less than 500 nm, the second layer containing iron at a concentration of less than 1×10.sup.17/cm.sup.3, and the second layer containing carbon at a concentration of less than 1×10.sup.17/cm.sup.3.

There is provided a group III nitride laminate, including: a substrate comprised of silicon carbide; a first layer comprised of aluminum nitride and formed on the substrate; a second layer comprised of gallium nitride and formed on the first layer; and a third layer formed on the second layer and comprised of group III nitride having an electron affinity lower than that of the gallium nitride which is comprised in the second layer, the second layer having a thickness of less than 500 nm, the second layer containing iron at a concentration of less than 1×10.sup.17/cm.sup.3, and the second layer containing carbon at a concentration of less than 1×10.sup.17/cm.sup.3.

A modified aluminum nitride particle comprises an aluminum nitride core and a shell surrounding the aluminum nitride core. The shell comprises a crosslinked organic polymer. Methods of making the modified aluminum nitride particle by admicellar polymerization are also disclosed.