An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide film consists essentially of 40 mol % to less than 100 mol % of Y.sub.2O.sub.3, over 0 mol % to 60 mol % of ZrO.sub.2, and 0 mol % to 9 mol % of Al.sub.2O.sub.3.

In example implementations, a method for extracting layers of build material into a carrier. The method includes providing a layer of build material onto a bed. Portions of the layer of build material on the bed are digitally printed with a liquid functional material (LFM). The method repeats providing the layer of build material and digitally printing without applying energy to the LFM to define a structure in layers of build material on the bed. The layers of build material are extracted into a carrier and the carrier is removed.

In example implementations, a method for extracting layers of build material into a carrier. The method includes providing a layer of build material onto a bed. Portions of the layer of build material on the bed are digitally printed with a liquid functional material (LFM). The method repeats providing the layer of build material and digitally printing without applying energy to the LFM to define a structure in layers of build material on the bed. The layers of build material are extracted into a carrier and the carrier is removed.

Provided is a member for optical glass manufacturing apparatus. The member is used for optical glass manufacturing apparatus and exposed to a gas containing a halogen element in a high temperature environment of 1100° C. or higher. The member includes dense ceramics containing silicon nitride as a main component, and a porosity of a surface layer of the member is smaller than a porosity of the inside of the member.

Provided is a member for optical glass manufacturing apparatus. The member is used for optical glass manufacturing apparatus and exposed to a gas containing a halogen element in a high temperature environment of 1100° C. or higher. The member includes dense ceramics containing silicon nitride as a main component, and a porosity of a surface layer of the member is smaller than a porosity of the inside of the member.

Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

A process comprising: (i) coating particles of silicon carbide, silicon nitride, boron carbide or boron nitride with a metal alloy or metal layer; (ii) agglomerating the particles of step (i); thermally spraying the agglomerated metal or metal alloy coated particles onto a substrate to provide a coating thereon.

A process comprising: (i) coating particles of silicon carbide, silicon nitride, boron carbide or boron nitride with a metal alloy or metal layer; (ii) agglomerating the particles of step (i); thermally spraying the agglomerated metal or metal alloy coated particles onto a substrate to provide a coating thereon.

The present invention relates to a method for preparing a SiC—Si.sub.3N.sub.4 composite material and a SiC—Si.sub.3N.sub.4 composite material prepared according to same and comprises the steps of: preparing a mold; and forming a SiC—Si.sub.3N.sub.4 composite material by introducing, to the mold, a source gas comprising Si, N and C, at 1100 to 1600° C. More particularly, the present invention provides the SiC—Si.sub.3N.sub.4 composite material of high purity that is applicable to a semiconductor process, and increases the thermal shock strength of a SiC material by causing Si.sub.3N.sub.4, which is a material with a high thermal shock strength, to grow together via a CVD method.