Provided is a ceramic composite material and a wavelength converter. The ceramic composite material includes: an alumina matrix, a fluorescent powder uniformly distributed in the alumina matrix, and scattering centers uniformly distributed in the alumina matrix, wherein the alumina matrix is an alumina ceramics, the scattering centers are alumina particles, the alumina particles each have a particle diameter of 1 μm to 10 μm, and the fluorescent powder has a particle diameter of 13 μm to 20 μm.

The present disclosure relates to a mold for glass forming, wherein the mold comprises a ceramic material, and wherein the ceramic material comprises aluminum nitride and hexagonal boron nitride, and wherein the ceramic material comprises from 50 to 80% by weight of aluminum nitride and from 20 to 50% by weight of hexagonal boron nitride, based on the total weight of the ceramic material. The present disclosure further relates to a process for using such molds to form curved glass plates.

The present disclosure relates to a mold for glass forming, wherein the mold comprises a ceramic material, and wherein the ceramic material comprises aluminum nitride and hexagonal boron nitride, and wherein the ceramic material comprises from 50 to 80% by weight of aluminum nitride and from 20 to 50% by weight of hexagonal boron nitride, based on the total weight of the ceramic material. The present disclosure further relates to a process for using such molds to form curved glass plates.

An embodiment of a PCD insert comprises an embodiment of a PCD element joined to a cemented carbide substrate at an interface. The PCD element has internal diamond surfaces defining interstices between them. The PCD element comprises a masked or passivated region and an unmasked or unpassivated region, the unmasked or unpassivated region defining a boundary with the substrate, the boundary being the interface. At least some of the internal diamond surfaces of the masked or passivated region contact a mask or passivation medium, and some or all of the interstices of the masked or passivated region and of the unmasked or unpassivated region are at least partially filled with an infiltrant material.

An embodiment of a PCD insert comprises an embodiment of a PCD element joined to a cemented carbide substrate at an interface. The PCD element has internal diamond surfaces defining interstices between them. The PCD element comprises a masked or passivated region and an unmasked or unpassivated region, the unmasked or unpassivated region defining a boundary with the substrate, the boundary being the interface. At least some of the internal diamond surfaces of the masked or passivated region contact a mask or passivation medium, and some or all of the interstices of the masked or passivated region and of the unmasked or unpassivated region are at least partially filled with an infiltrant material.

A method of producing polycrystalline Y.sub.3Ba.sub.5Cu.sub.8O.sub.y (Y-358) whereby powders of yttrium (III) oxide, a barium (II) salt, and copper (II) oxide are pelletized, calcined at 850 to 950° C. for 8 to 16 hours, ball milled under controlled conditions, pelletized again and sintered in an oxygen atmosphere at 900 to 1000° C. for up to 72 hours. The polycrystalline Y.sub.3Ba.sub.5Cu.sub.8O.sub.y thus produced is in the form of elongated crystals having an average length of 2 to 10 μm and an average width of 1 to 2 μm, and embedded with spherical nanoparticles of yttrium deficient Y.sub.3Ba.sub.5Cu.sub.8O.sub.y having an average diameter of 5 to 20 nm. The spherical nanoparticles are present as agglomerates having flower-like morphology with an average particles size of 30 to 60 nm. The ball milled polycrystalline Y.sub.3Ba.sub.5Cu.sub.8O.sub.y prepared under controlled conditions shows significant enhancement of superconducting and flux pinning properties.

A refractory object may include a zircon body that is intentionally doped with a dopant including an alkaline earth element and aluminum. The refractory object can have an improved creep deformation rate. In an embodiment, the refractory object can have a creep deformation rate of not greater than about 1.8 E-5 h.sup.−1 at a temperature of 1350° C. and a stress of 2 MPa. In another embodiment, the zircon body may include an amorphous phase including an alkaline earth metal element.

A refractory object may include a zircon body that is intentionally doped with a dopant including an alkaline earth element and aluminum. The refractory object can have an improved creep deformation rate. In an embodiment, the refractory object can have a creep deformation rate of not greater than about 1.8 E-5 h.sup.−1 at a temperature of 1350° C. and a stress of 2 MPa. In another embodiment, the zircon body may include an amorphous phase including an alkaline earth metal element.

A ceramic substrate made of a dielectric material including silicon carbide particles, which is used as a forming material, in which the number of the silicon carbide particles per unit area on the surface of the substrate is smaller than the number of the silicon carbide particles per unit area in a cross section of the substrate.

Disclosed is a method for manufacturing a ceramic susceptor, the method including: preparing ceramic sheets; preparing a lamination structure of a molded body, in which the ceramic sheets are laminated and a conductive metal layer for electrodes is disposed between the ceramic sheet laminated products; and sintering the lamination structure of the molded body, wherein the preparing of the ceramic sheets includes: obtaining a vitrified first additive powder by heat-treating a slurry containing MgO, SiO.sub.2, and CaO; preparing a slurry by mixing an Al.sub.2O.sub.3 powder with the first additive powder, a second additive powder containing a MgO powder, and a third additive powder containing a Y.sub.2O.sub.3 powder; and forming the ceramic sheets by tape casting the slurry.