A carrier substrate (1) that includes an insulation layer (11) and a metal layer (12), wherein a flank profile (2), in particular an etching flank profile, at least zonally borders the metal layer (12) in a primary direction (P) extending parallel to the main extension plane (HSE), wherein, viewed in the primary direction (P), the flank profile (2) extends from a first edge (15) on an upper side (31) of the metal layer (12), which faces away from the insulation layer (11), to a second edge (16) on a lower side (32) of the metal layer (12), which faces the insulation layer (11), characterized in that the flank profile (2), viewed in the primary direction (P), has at least one local maximum (21) and at least one local minimum (22).

A method for forming a ceramic according to one embodiment includes electrophoretically depositing a plurality of layers of particles of a non-cubic material. The particles of the deposited non-cubic material are oriented in a common direction.

A ceramic bonding material including at least one fibrous material, a flux agent and a thickening agent wherein the ceramic bonding material fired at a set temperature to bond the two adjacent substrate faces.

Adhesive compositions and methods for bonding materials with different thermal expansion coefficients is provided. The adhesive is formulated using a flux material, a low flux material, and a filler material, where the filler material comprises particulate from at least one of the two components being bonded together. A thickening agent can also be used as part of the adhesive composition to aid in applying the adhesive and establishing a desired bond thickness. The method of forming a high strength bond using the disclosed adhesive does not require the use of intermediary layer or the use of high cure temperatures that could damage one or both of the components being bonded together.

A joining method includes the steps of placing a brazing element between an interface area of a first ceramic piece and an interface area of a second ceramic piece to create a joining pre-assembly, placing the components of said joining pre-assembly into a process chamber, removing oxygen from said process chamber, and heating at least said brazing element of said joining pre-assembly, thereby hermetically joining said first ceramic piece to said second ceramic piece. The brazing element consists of Nickel and Carbon.

Disclosed are devices and methods for semiconductor devices including a ceramic substrate. Aspects disclosed include semiconductor device including an electrical component, an alumina ceramic substrate and a substrate-film. The substrate-film is deposited on the alumina ceramic substrate. The substrate-film has a planar substrate-film surface opposite the alumina ceramic substrate. The electrical component is formed on the substrate-film surface of the substrate-film on the alumina ceramic substrate.

A seal system includes a ceramic component that has a non-core-gaspath surface region that defines a first surface roughness and a core gaspath surface region. A metallic component is situated adjacent the non-core-gaspath surface region. A coating system is disposed on the ceramic component. The coating system includes a silicon-containing layer on the non-core-gaspath surface region and a barrier layer that has a first section on the silicon-containing layer and a second section on the core-gaspath region and that is connected to the first section. The surface of the barrier layer has a second surface roughness that is less than the first surface roughness. The first section is in contact with the metallic component and the second section serves as an environmental barrier on the core-gaspath region.

A method for the assembly of a metal part and a ceramic part, including the following steps: supplying a solid ceramic part of the alumina type; supplying a solid metal part, the metal being selected from platinum and tantalum, or an alloy including a majority of one of these metals; depositing at least one layer, called interface layer, on at least one of the solid parts, the interface layer containing magnesium oxide; bringing into contact the solid metal part and the solid ceramic part such that the interface layer is located between the solid parts; and hot densification under pressure of the solid parts brought into contact, to create a close bond between the solid parts and form a spinel from the interface layer. An electrical device, such as a capacitive sensor having a sensitive part produced according to the present method, is also provided.

A bonded body according to an embodiment comprises a ceramic substrate, a copper plate, and a bonding layer provided on at least one surface of the ceramic substrate and bonding the ceramic substrate and the copper plate, in which the bonding layer contains Cu, Ti, and a first element being one or two selected from Sn and In, and the bonding layer includes a Ti-rich region in which a ratio (M.sub.Ti/M.sub.E1) of a mass M.sub.Ti of Ti to a mass M.sub.E1 of the first element being 0.5 or more and a Ti-poor region in which the ratio (M.sub.Ti/M.sub.E1) being 0.1 or less.

In a ceramic/aluminum bonded body according to the present invention, a ceramic member and an aluminum member formed of aluminum or an aluminum alloy are bonded to each other, the ceramic member has a ceramic main body formed of silicon nitride, and an aluminum nitride layer or an aluminum oxide layer formed on the surface of the ceramic main body to which the aluminum member is bonded, the ceramic member and the aluminum member are bonded to each other through the aluminum nitride layer or the aluminum oxide layer, the ceramic main body is provided with silicon nitride phases and a glass phase formed between the silicon nitride phases, Al is present in a portion of the glass phase of the ceramic main body at an interface with the aluminum nitride layer or aluminum oxide layer.