C04B41/4517

METHOD FOR MANUFACTURING CIRCUIT BOARD INCLUDING METAL-CONTAINING LAYER
20220132676 · 2022-04-28 ·

Provided is a method for manufacturing a circuit board including: (a) preparing a mixture of a metal powder, an anti-sintering agent, and an activator; (b) immersing a dielectric substrate in the mixture; (c) forming a metal-containing layer on the surface of the dielectric substrate by heating the mixture under an inert atmosphere or under a reducing atmosphere; (d) forming a first metal layer on the metal-containing layer by electroless plating and forming a second metal layer thereon by electroplating; and (e) forming a metal pattern on the dielectric substrate, wherein the first metal layer includes Cu, Ni, Co, Au, Pd, or an alloy thereof, the second metal layer includes Cu, Ni, Fe, Co, Cr, Zn, Au, Ag, Pt, Pd, Rh, or an alloy thereof, and the method further includes performing heat treatment at least once after step (c).

METHOD FOR MANUFACTURING CIRCUIT BOARD INCLUDING METAL-CONTAINING LAYER
20220132676 · 2022-04-28 ·

Provided is a method for manufacturing a circuit board including: (a) preparing a mixture of a metal powder, an anti-sintering agent, and an activator; (b) immersing a dielectric substrate in the mixture; (c) forming a metal-containing layer on the surface of the dielectric substrate by heating the mixture under an inert atmosphere or under a reducing atmosphere; (d) forming a first metal layer on the metal-containing layer by electroless plating and forming a second metal layer thereon by electroplating; and (e) forming a metal pattern on the dielectric substrate, wherein the first metal layer includes Cu, Ni, Co, Au, Pd, or an alloy thereof, the second metal layer includes Cu, Ni, Fe, Co, Cr, Zn, Au, Ag, Pt, Pd, Rh, or an alloy thereof, and the method further includes performing heat treatment at least once after step (c).

Method for manufacturing circuit board including metal-containing layer

Provided is a method for manufacturing a circuit board including: (a) preparing a mixture of a metal powder, an anti-sintering agent, and an activator; (b) immersing a dielectric substrate in the mixture; (c) forming a metal-containing layer on the surface of the dielectric substrate by heating the mixture under an inert atmosphere or under a reducing atmosphere; (d) forming a first metal layer on the metal-containing layer by electroless plating and forming a second metal layer thereon by electroplating; and (e) forming a metal pattern on the dielectric substrate, wherein the first metal layer includes Cu, Ni, Co, Au, Pd, or an alloy thereof, the second metal layer includes Cu, Ni, Fe, Co, Cr, Zn, Au, Ag, Pt, Pd, Rh, or an alloy thereof, and the method further includes performing heat treatment at least once after step (c).

Method for manufacturing circuit board including metal-containing layer

Provided is a method for manufacturing a circuit board including: (a) preparing a mixture of a metal powder, an anti-sintering agent, and an activator; (b) immersing a dielectric substrate in the mixture; (c) forming a metal-containing layer on the surface of the dielectric substrate by heating the mixture under an inert atmosphere or under a reducing atmosphere; (d) forming a first metal layer on the metal-containing layer by electroless plating and forming a second metal layer thereon by electroplating; and (e) forming a metal pattern on the dielectric substrate, wherein the first metal layer includes Cu, Ni, Co, Au, Pd, or an alloy thereof, the second metal layer includes Cu, Ni, Fe, Co, Cr, Zn, Au, Ag, Pt, Pd, Rh, or an alloy thereof, and the method further includes performing heat treatment at least once after step (c).

DIRECT BONDED ENVIRONMENTAL BARRIER COATINGS FOR SIC/SIC COMPOSITES AND METHODS FOR PREPARING THE SAME
20230312424 · 2023-10-05 · ·

A method of preparing a ceramic matrix composite (CMC) article is disclosed. The method includes depositing a first layer of a coating composition directly onto a surface of a silicon carbide fiber-reinforced silicon carbide matrix (SiC/SiC) composite substrate, with the coating composition comprising a rare earth silicate and a sintering aid. The method also includes heating the first layer to sinter the coating composition to form an environmental barrier coating (EBC) adjacent the SiC/SiC composite and a transition layer integrally bonded to and between the substrate and the EBC. CMC articles prepared according to the method, including coated turbomachine components, are also disclosed.

DIRECT BONDED ENVIRONMENTAL BARRIER COATINGS FOR SIC/SIC COMPOSITES AND METHODS FOR PREPARING THE SAME
20230312424 · 2023-10-05 · ·

A method of preparing a ceramic matrix composite (CMC) article is disclosed. The method includes depositing a first layer of a coating composition directly onto a surface of a silicon carbide fiber-reinforced silicon carbide matrix (SiC/SiC) composite substrate, with the coating composition comprising a rare earth silicate and a sintering aid. The method also includes heating the first layer to sinter the coating composition to form an environmental barrier coating (EBC) adjacent the SiC/SiC composite and a transition layer integrally bonded to and between the substrate and the EBC. CMC articles prepared according to the method, including coated turbomachine components, are also disclosed.

Doped materials/alloys and hot isostatic pressing method of making same

A method of forming a doped substrate comprises heating a substrate comprising a layer of a dopant on at least one surface to a predetermined temperature; applying a predetermined degree of isostatic external pressure on the surface of said substrate at said predetermined temperature for a time sufficient to induce thermal migration of the dopant into the substrate to provide a doped substrate; and removing the isostatic pressure and cooling the doped substrate to about room temperature. The substrate is a glass material, a single crystal material, a poly-crystalline material, a ceramic material, or a semiconductor material, and the substrate may be optically transparent. The dopant comprises one or more transition metals, one or more rare earth elements, or a combination of both. The layer of a dopant comprises one or more segregated layers of distinct chemical species. The isostatic pressure and elevated temperature may be applied simultaneously or sequentially.

Doped materials/alloys and hot isostatic pressing method of making same

A method of forming a doped substrate comprises heating a substrate comprising a layer of a dopant on at least one surface to a predetermined temperature; applying a predetermined degree of isostatic external pressure on the surface of said substrate at said predetermined temperature for a time sufficient to induce thermal migration of the dopant into the substrate to provide a doped substrate; and removing the isostatic pressure and cooling the doped substrate to about room temperature. The substrate is a glass material, a single crystal material, a poly-crystalline material, a ceramic material, or a semiconductor material, and the substrate may be optically transparent. The dopant comprises one or more transition metals, one or more rare earth elements, or a combination of both. The layer of a dopant comprises one or more segregated layers of distinct chemical species. The isostatic pressure and elevated temperature may be applied simultaneously or sequentially.

HIGH TEMPERATURE COATINGS
20220250996 · 2022-08-11 ·

A method includes forming a crystallized metal carbide undercoat on a surface of a carbon-carbon composite substrate. The method further includes forming an overcoat on a surface of the undercoat. The overcoat includes a plurality of crystallized ultra-high melting point overcoat layers. Each overcoat layer is sequentially formed by applying a mixture to a surface of an underlying layer and heating the mixture. The mixture includes a plurality of ultra-high melting point refractory ceramic particles and a pre-ceramic polymer. The mixture is heated to a heat treatment temperature to pyrolyze the pre-ceramic polymer and form the overcoat layer in an inert atmosphere or under vacuum. As a result, the overcoat layer includes a crystallized ultra-high melting point polymer-derived ceramic matrix that includes the plurality of ultra-high melting point refractory ceramic particles.

METHOD OF PRESSURE SINTERING AN ENVIRONMENTAL BARRIER COATING ON A SURFACE OF A CERAMIC SUBSTRATE

This disclosure provides a method of pressure sintering an environmental barrier coating on a surface of a ceramic substrate to form an article. The method includes the steps of etching the surface of the ceramic substrate to texture the surface, disposing an environmental barrier coating on the etched surface of the ceramic substrate wherein the environmental barrier coating includes a rare earth silicate, and pressure sintering the environmental barrier coating on the etched surface of the ceramic substrate in an inert or nitrogen atmosphere at a pressure of greater than atmospheric pressure such that at least a portion of the environmental barrier coating is disposed in the texture of the surface of the ceramic substrate thereby forming the article.